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Analytic modeling of the bias temperature instability using capture/emission time maps
Abstract
Despite a number of recent advances made in the understanding of the bias temperature instability (BTI), there is still no simple model available which can capture BTI degradation during DC or duty-factor (DF) dependent stress and the following recovery. By exploiting the intuitive features of the recently proposed capture/emission time (CET) maps [1, 2], we suggest an analytic model capable of handling a wide number of BTI stress and recovery patterns. As the model captures both the temperature- and bias- dependence of the degradation, it allows for realistic lifetime extrapolation. Compared to available models which do not consider the saturation of the degradation, our model predicts considerably more optimistic lifetimes.
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Cited by
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Das, S., Sebastian, A., Pop, E., McClellan, C. J., Franklin, A. D., Grasser, T., Knobloch, T., Illarionov, Y., Penumatcha, A. V., Appenzeller, J., et al. (2021) · Nature Electronics · doi:10.1038/s41928-021-00670-1 · Cited by 983
Self-citationStochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities
Grasser, T. (2012) · Microelectronics Reliability · doi:10.1016/j.microrel.2011.09.002 · Cited by 554
Self-citationUnderstanding BTI in SiC MOSFETs and Its Impact on Circuit Operation
Puschkarsky, K., Reisinger, H., Aichinger, T., Gustin, W., & Grasser, T. (2018) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2018.2813063 · Cited by 115
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Metadata
- Authors
- Grasser, T., Wagner, P.-J., Reisinger, H., Aichinger, T., Pobegen, G., Nelhiebel, M., & Kaczer, B.
- Venue
- 2011 International Electron Devices Meeting
- Publisher
- IEEE
- Published
- 2011-12
- Pages
- 27.4.1-27.4.4
- ISSN
- 0163-1918 (ISSN-L)
- OpenAlex
- W2114859176
- Cited by
- 182
- References
- 0
- FWCI
- 26.97
- Type
- conference paper
- Language
- en
- Open access
- closed
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- Grasser, T., Wagner, P.-J., Reisinger, H., Aichinger, T., Pobegen, G., Nelhiebel, M., & Kaczer, B. (2011). Analytic modeling of the bias temperature instability using capture/emission time maps. 2011 International Electron Devices Meeting. https://doi.org/10.1109/iedm.2011.6131624
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