Understanding BTI in SiC MOSFETs and Its Impact on Circuit Operation

Material Science and Device Physics in SiC Technology for High-Voltage Power Devices

Kimoto, T. (2015) · Japanese Journal of Applied Physics · doi:10.7567/jjap.54.040103 · Cited by 1,176 · see citing works

Basic Mechanisms of Threshold-Voltage Instability and Implications for Reliability Testing of SiC MOSFETs

Lelis, A. J., Green, R., Habersat, D. B., & El, M. (2015) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2014.2356172 · Cited by 477 · see citing works

The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability

Grasser, T., Reisinger, H., Wagner, P.-J., Schanovsky, F., Goes, W., & Kaczer, B. (2010) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/irps.2010.5488859 · Cited by 296 · see citing works

Silicon carbide: A unique platform for metal-oxide-semiconductor physics

Liu, G., Tuttle, B., & Dhar, S. (2015) · Applied Physics Reviews · doi:10.1063/1.4922748 · Cited by 293 · see citing works

Analysis of NBTI Degradation- and Recovery-Behavior Based on Ultra Fast VT-Measurements

Reisinger, H., Blank, O., Heinrigs, W., Muehlhoff, A., Gustin, W., & Schlünder, C. (2006) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/relphy.2006.251260 · Cited by 282 · see citing works

The statistical analysis of individual defects constituting NBTI and its implications for modeling DC- and AC-stress

Reisinger, H., Grasser, T., Gustin, W., & Schlünder, C. (2010) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/irps.2010.5488858 · Cited by 205 · see citing works

Analytic modeling of the bias temperature instability using capture/emission time maps

Grasser, T., Wagner, P.-J., Reisinger, H., Aichinger, T., Gregor Pobegen, A., Nelhiebel, M., & Kaczer, B. (2011) · Technical digest - International Electron Devices Meeting/Technical digest · doi:10.1109/iedm.2011.6131624 · Cited by 184 · see citing works

Understanding and modeling AC BTI

Reisinger, H., Grasser, T., Ermisch, K., Nielen, H., Gustin, W., & Schlünder, C. (2011) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/irps.2011.5784542 · Cited by 108 · see citing works

Recent advances in understanding the bias temperature instability

Grasser, T., Kaczer, B., Goes, W., Reisinger, H., Aichinger, T., Hehenberger, P., Wagner, P.-J., Schanovsky, F., Franco, J., Roussel, P. J., et al. (2010) · Technical digest - International Electron Devices Meeting/Technical digest · doi:10.1109/iedm.2010.5703295 · Cited by 107 · see citing works

Threshold-voltage bias-temperature instability in commercially-available SiC MOSFETs

Green, R., Lelis, A. J., & Habersat, D. B. (2016) · Japanese Journal of Applied Physics · doi:10.7567/jjap.55.04ea03 · Cited by 84 · see citing works

On the subthreshold drain current sweep hysteresis of 4H-SiC nMOSFETs

Rescher, G., Gregor Pobegen, A., Aichinger, T., & Grasser, T. (2016) · Technical digest - International Electron Devices Meeting/Technical digest · doi:10.1109/iedm.2016.7838392 · Cited by 81 · see citing works

On the Distribution of NBTI Time Constants on a Long, Temperature-Accelerated Time Scale

Pobegen, G., & Grasser, T. (2013) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2013.2264816 · Cited by 61 · see citing works

On the temperature dependence of NBTI recovery

Aichinger, T., Nelhiebel, M., & Grasser, T. (2008) · Microelectronics Reliability · doi:10.1016/j.microrel.2008.06.018 · Cited by 47 · see citing works

Threshold voltage hysteresis in SiC MOSFETs and its impact on circuit operation

Puschkarsky, K., Reisinger, H., Aichinger, T., Gustin, W., & Grasser, T. (2017) · IEEE International Integrated Reliability Workshop final report · doi:10.1109/iirw.2017.8361232 · Cited by 40 · see citing works

Understanding temperature acceleration for NBTI

Gregor Pobegen, A., Aichinger, T., Nelhiebel, M., & Grasser, T. (2011) · Technical digest - International Electron Devices Meeting/Technical digest · doi:10.1109/iedm.2011.6131623 · Cited by 39 · see citing works

Threshold Voltage Instabilities of Present SiC-Power MOSFETs under Positive Bias Temperature Stress

Rescher, G., Pobegen, G., & Grasser, T. (2016) · Materials science forum · doi:10.4028/www.scientific.net/msf.858.481 · Cited by 35 · see citing works

Complete extraction of defect bands responsible for instabilities in n and pFinFETs

Rzepa, G., Waltl, M., Goes, W., Kaczer, B., Franco, J., Chiarella, T., Horiguchi, N., & Grasser, T. (2016) · Symposium on VLSI Technology · doi:10.1109/vlsit.2016.7573437 · Cited by 32 · see citing works

On the impact of the NBTI recovery phenomenon on lifetime prediction of modern p-MOSFETs

Schlünder, C., Heinrigs, W., Gustin, W., & Reisinger, H. (2006) · IEEE International Integrated Reliability Workshop final report · doi:10.1109/irws.2006.305199 · Cited by 29 · see citing works

Hot-Carrier Degradation and Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: Similarities and Differences

Illarionov, Y. Y., Smith, A. D., Vaziri, S., Östling, M., Mueller, T., Lemme, M. C., & Grasser, T. (2015) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2015.2480704 · Cited by 26 · see citing works

Evaluations of threshold voltage stability on COTS SiC DMOSFETs using fast measurements

Habersat, D. B., Green, R., & Lelis, A. J. (2016) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/irps.2016.7574588 · Cited by 23 · see citing works

Reliability study on positive bias temperature instability in SiC MOSFETs by fast drain current measurement

Okunishi, T., Hisada, K., Toyoda, H., Yamamoto, Y., Arai, K., Yamashita, Y., Yamazaki, K., & Nara, S. (2017) · Japanese Journal of Applied Physics · doi:10.7567/jjap.56.04cr01 · Cited by 21 · see citing works

Temperature-dependent threshold stability of COTS SiC MOSFETs during gate switching

Habersat, D. B., Green, R., & Lelis, A. J. (2017) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/irps.2017.7936413 · Cited by 18 · see citing works

Comprehensive Evaluation of Bias Temperature Instabilities on 4H-SiC MOSFETs Using Device Preconditioning

Rescher, G., Gregor Pobegen, A., Aichinger, T., & Grasser, T. (2018) · Materials science forum · doi:10.4028/www.scientific.net/msf.924.671 · Cited by 8 · see citing works

Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability

Puschkarsky, K., Grasser, T., Aichinger, T., Gustin, W., & Reisinger, H. (2019) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2019.2938262 · Cited by 219 · see citing works

A review of silicon carbide MOSFETs in electrified vehicles: Application, challenges, and future development

Shi, B., Ramones, A. I., Liu, Y., Wang, H., Li, Y., Pischinger, S., & Andert, J. (2023) · IET Power Electronics · doi:10.1049/pel2.12524 · Cited by 157 · see citing works

Evaluation of Aging's Effect on Temperature-Sensitive Electrical Parameters in SiC mosfets

Yang, F., Ugur, E., & Akin, B. (2020) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2019.2950311 · Cited by 121 · see citing works

Temperature-Independent Gate-Oxide Degradation Monitoring of SiC MOSFETs Based on Junction Capacitances

Farhadi, M., Yang, F., Pu, S., Vankayalapati, B. T., & Akin, B. (2021) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2021.3049394 · Cited by 93 · see citing works

A Novel Non-Intrusive Technique for BTI Characterization in SiC mosfets

Gonzalez, J. A. O., & Alatise, O. M. (2018) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2018.2870067 · Cited by 82 · see citing works

A Physical Explanation of Threshold Voltage Drift of SiC MOSFET Induced by Gate Switching

Jiang, H., Qi, X., Qiu, G., Zhong, X., Tang, L. J., Mao, H., Wu, Z., Chen, H., & Ran, L. (2022) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2022.3161678 · Cited by 76 · see citing works

Design Methodology of DC Power Cycling Test Setup for SiC MOSFETs

Yang, F., Uğur, E., & Akin, B. (2019) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2019.2914419 · Cited by 62 · see citing works

Bias Temperature Instability and Junction Temperature Measurement Using Electrical Parameters in SiC Power MOSFETs

Gonzalez, J. A. O., & Alatise, O. M. (2020) · IEEE Transactions on Industry Applications · doi:10.1109/tia.2020.3045120 · Cited by 57 · see citing works

Investigation of Failure Mechanisms of 1200 V Rated Trench SiC MOSFETs Under Repetitive Avalanche Stress

Deng, X., Huang, W., Li, X., Li, X., Chen, C., Wen, Y., Ding, J., Chen, W., Sun, Y., & Zhang, B. (2022) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2022.3163930 · Cited by 56 · see citing works

Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs

Puschkarsky, K., Grasser, T., Aichinger, T., Gustin, W., & Reisinger, H. (2018) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/irps.2018.8353560 · Cited by 56 · see citing works

Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETs

Feil, M. W., Waschneck, K., Reisinger, H., Berens, J., Aichinger, T., Salmen, P., Rescher, G., Gustin, W., & Grasser, T. (2023) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/irps48203.2023.10117740 · Cited by 45 · see citing works

Influence of the Threshold Voltage Hysteresis and the Drain Induced Barrier Lowering on the Dynamic Transfer Characteristic of SiC Power MOSFETs

Hofstetter, P., Maier, R. W., & Bakran, M. (2019) · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · doi:10.1109/apec.2019.8721772 · Cited by 42 · see citing works

Impact of BTI-Induced Threshold Voltage Shifts in Shoot-Through Currents From Crosstalk in SiC MOSFETs

Gonzalez, J. A. O., & Alatise, O. M. (2020) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2020.3012298 · Cited by 42 · see citing works

Investigation on Degradation of SiC MOSFET Under Accelerated Stress in a PFC Converter

Jiang, X., Wang, J., Chen, J., Yu, H., Li, Z., & John Shen, Z. (2021) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2020.2988447 · Cited by 39 · see citing works

Device Screening Strategy for Suppressing Current Imbalance in Parallel-Connected SiC MOSFETs

Zhao, B., Yu, Q., Sun, P., Cai, Y., & Zhao, Z. (2021) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2021.3116458 · Cited by 37 · see citing works

Comparative Investigation on Aging Precursor and Failure Mechanism of Commercial SiC MOSFETs Under Different Power Cycling Conduction Modes

Wang, M., Chen, Y., He, Z., Wu, Z., & Li, B. (2023) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2023.3257885 · Cited by 35 · see citing works

Online Monitoring for Threshold Voltage of SiC MOSFET Considering the Coupling Impact on BTI and Junction Temperature

Xin, J., Du, M., Ouyang, Z., & Wei, K. (2021) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2021.3056634 · Cited by 35 · see citing works

The Potential of SiC Cascode JFETs in Electric Vehicle Traction Inverters

Wu, R., Gonzalez, J. A. O., Davletzhanova, Z., Mawby, P., & Alatise, O. M. (2019) · IEEE Transactions on Transportation Electrification · doi:10.1109/tte.2019.2954654 · Cited by 33 · see citing works

Modeling of NBTS Effects in P-Channel Power VDMOSFETs

Danković, D., Mitrović, N., Prijić, Z., & Stojadinović, N. (2020) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2020.2974131 · Cited by 30 · see citing works

Gate-Oxide Degradation Monitoring of SiC MOSFETs Based on Transfer Characteristic With Temperature Compensation

Farhadi, M., Vankayalapati, B. T., Sajadi, R., & Akin, B. (2023) · IEEE Transactions on Transportation Electrification · doi:10.1109/tte.2023.3265386 · Cited by 29 · see citing works

Dynamic Reliability Management in Neuromorphic Computing

Song, S., Hanamshet, J., Balaji, A., Das, A. K., Krichmar, J. L., Dutt, N. D., Kandasamy, N., & Catthoor, F. (2021) · ACM Journal on Emerging Technologies in Computing Systems · doi:10.1145/3462330 · Cited by 28 · see citing works

Layout-Dominated Dynamic Imbalanced Current Analysis and Its Suppression Strategy of Parallel SiC MOSFETs

Zhao, B., Sun, P., Yu, Q., Cai, Y., & Zhao, Z. (2021) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2021.3101719 · Cited by 27 · see citing works

A Method for the Measurement of the Threshold-Voltage Shift of SiC MOSFETs During Power Cycling Tests

Kempiak, C., & Lindemann, A. (2020) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2020.3039424 · Cited by 29 · see citing works

Investigation on gate oxide reliability under gate bias screening for commercial SiC planar and trench MOSFETs

Shi, L., Qian, J., Jin, M., Bhattacharya, M., Yu, H., Shimbori, A., White, M. H., & Agarwal, A. K. (2024) · Materials Science in Semiconductor Processing · doi:10.1016/j.mssp.2024.108194 · Cited by 24 · see citing works

AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters

Farhadi, M., Vankayalapati, B. T., Sajadi, R., & Akin, B. (2023) · IEEE Transactions on Vehicular Technology · doi:10.1109/tvt.2023.3271251 · Cited by 24 · see citing works

Impact of the Gate Oxide Reliability of SiC MOSFETs on the Junction Temperature Estimation Using Temperature Sensitive Electrical Parameters

Gonzalez, J. A. O., & Alatise, O. M. (2018) · IEEE Energy Conversion Congress and Exposition (ECCE) · doi:10.1109/ecce.2018.8557810 · Cited by 25 · see citing works

Investigation of Reverse Recovery Phenomenon for SiC MOSFETs in High-Temperature Applications

Qian, C., Wang, Z., Zhou, D., Ge, Y., Zhou, Y., Yan, X., Xin, G., & Shi, X. (2023) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2023.3273351 · Cited by 23 · see citing works

Gate Oxide Instability and Lifetime in SiC MOSFETs under a Wide Range of Positive Electric Field Stress

Noguchi, M., Koyama, A., Iwamatsu, T., Amishiro, H., WATANABE, H. K., & Miura, N. (2020) · Technical digest - International Electron Devices Meeting/Technical digest · doi:10.1109/iedm13553.2020.9371992 · Cited by 22 · see citing works

Plasma passivation of near-interface oxide traps and voltage stability in SiC MOS capacitors

Sun, Y., Yang, C., Yin, Z., Qin, F., & Wang, D. (2019) · Journal of Applied Physics · doi:10.1063/1.5084759 · Cited by 22 · see citing works

Challenges of Junction Temperature Sensing in SiC Power MOSFETs

Gonzalez, J. A. O., & Alatise, O. M. (2019) · International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia) · doi:10.23919/icpe2019-ecceasia42246.2019.8797281 · Cited by 21 · see citing works

Studies of Bias Temperature Instabilities in 4H-SiC DMOSFETs

Ghosh, A. K., Hao, J., Cook, M., Kendrick, C., Suliman, S. A., Hall, G. D. R., Kopley, T., & Awadelkarim, O. O. (2020) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/irps45951.2020.9128318 · Cited by 21 · see citing works

Three-phase SiC inverter with active limitation of all MOSFETs junction temperature

Stella, F., Pellegrino, G., & Armando, E. G. (2020) · Microelectronics Reliability · doi:10.1016/j.microrel.2020.113659 · Cited by 20 · see citing works

A Review of Power Electronic Devices for Heavy Goods Vehicles Electrification: Performance and Reliability

Alatise, O. M., Deb, A., Bashar, E., Gonzalez, J. A. O., Jahdi, S., & Issa, W. R. (2023) · Energies · doi:10.3390/en16114380 · Cited by 20 · see citing works

Investigation on the Degradation Mechanism for SiC Power MOSFETs Under Repetitive Switching Stress

Wei, J., Liu, S., Lou, R., Tang, L., Ye, R., Zhang, L., Zhang, X., Sun, W., & Bai, S. (2019) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2019.2948836 · Cited by 20 · see citing works

Thermomechanical behaviour of inverse diode in SiC MOSFETs under surge current stress

Palanisamy, S., Lutz, J., Boldyrjew-Mast, R., & Basler, T. (2020) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/irps45951.2020.9129286 · Cited by 19 · see citing works

Degradation Dependency Analysis and Modeling of 1700 V Planar-Gate SiC MOSFETs Under Gate Switching Instability

Chen, C., Wang, Z., Ye, X., Hu, Y., Wang, H., Chen, H., & Leon, J. I. (2024) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2024.3490172 · Cited by 18 · see citing works

Electrically stimulated optical spectroscopy of interface defects in wide-bandgap field-effect transistors

Feil, M. W., Reisinger, H., Kabakow, A., Aichinger, T., Schleich, C., Vasil'ev, A. V., Waldhoer, D., Waltl, M., Gustin, W., & Grasser, T. (2023) · Communications Engineering · doi:10.1038/s44172-023-00053-8 · Cited by 18 · see citing works

Reliability and reliability investigation of wide-bandgap power devices

Lutz, J., & Franke, J. (2018) · Microelectronics Reliability · doi:10.1016/j.microrel.2018.07.001 · Cited by 18 · see citing works

Effect of common branch impedance coupling and mutual inductance on current sharing of paralleled SiC MOSFETs with different layouts

Zhao, B., Ke, J., Yu, Q., Sun, P., Cai, Y., & Zhao, Z. (2021) · IET Power Electronics · doi:10.1049/pel2.12211 · Cited by 17 · see citing works

Investigation of Threshold Voltage Instability of SiC MOSFETs Under Different Gate Voltage Sequences

Chen, Y., Rao, Y., Wang, M., Gao, R., He, Z., Chen, Y., & Lai, P. (2024) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2024.3365776 · Cited by 17 · see citing works

Gate Oxide Instability against a Wide Range of Negative Electric Field Stress of SiC MOSFETs

Noguchi, M., Koyama, A., Iwamatsu, T., Watanabe, H., & Miura, N. (2021) · Technical digest - International Electron Devices Meeting/Technical digest · doi:10.1109/iedm19574.2021.9720679 · Cited by 16 · see citing works

On the Physical Meaning of Single-Value Activation Energies for BTI in Si and SiC MOSFET Devices

Feil, M. W., Puschkarsky, K., Gustin, W., Reisinger, H., & Grasser, T. (2020) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2020.3036321 · Cited by 16 · see citing works

Categorization of PBTI Mechanisms on 4H-SiC MOSFETs by the Stress Gate Voltage and Channel Plane Orientation

Watanabe, T., Fukui, Y., Hino, S., Tomohisa, S., Miura, N., & Nishikawa, K. (2023) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2023.3234979 · Cited by 15 · see citing works

Working principle and characteristic analysis of SiC MOSFET

Yao, J. (2023) · Journal of Physics Conference Series · doi:10.1088/1742-6596/2435/1/012022 · Cited by 15 · see citing works

Investigation of Aging’s Effect on the Conduction and Switching Loss in SiC MOSFETs

Yang, F., Uğur, E., Pu, S., Akin, B., & Das, M. K. (2019) · IEEE Energy Conversion Congress and Exposition (ECCE) · doi:10.1109/ecce.2019.8912284 · Cited by 15 · see citing works

Gate Oxide Instability of 4H-SiC p-Channel MOSFET Induced by AC Stress at 200 °C

Yang, L., Bai, Y., Li, C., Yang, C., Chen, H., Tang, Y., Hao, J., Tian, X., & Liu, X. (2022) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2022.3224638 · Cited by 14 · see citing works

Dynamic characterization of SiC and GaN devices with BTI stresses

Gonzalez, J. A. O., Hedayati, M. H., Jahdi, S., Stark, B. H., & Alatise, O. M. (2019) · Microelectronics Reliability · doi:10.1016/j.microrel.2019.06.081 · Cited by 14 · see citing works

Grid Fault Current Injection Using Virtual Synchronous Machines Featuring Active Junction Temperature Limitation of Power Devices

Mandrile, F., Stella, F., Carpaneto, E., & Bojoi, R. I. (2022) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2022.3154488 · Cited by 14 · see citing works

Permanent and Transient Effects of High-Temperature Bias Stress on Room- Temperature $V_{T}$ Drift Measurements in SiC Power MOSFETs

Habersat, D. B., Green, R., & Lelis, A. J. (2019) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/irps.2019.8720538 · Cited by 13 · see citing works

BTI saturation and universal relaxation in SiC power MOSFETs

Sánchez, L., Acurio, E., Crupi, F., Reggiani, S., & Meneghesso, G. (2020) · Microelectronics Reliability · doi:10.1016/j.microrel.2020.113642 · Cited by 11 · see citing works

Chip Screening Method for Suppressing Current Imbalance of Parallel-Connected SiC MOSFETs

Zhao, B., Sun, P., Yu, Q., Cai, Y., Cai, J., & Zhao, Z. (2021) · International Conference on Energy, Electrical and Power Engineering (CEEPE) · doi:10.1109/ceepe51765.2021.9475791 · Cited by 10 · see citing works

Impact of Duty Cycle and Junction Temperature on Dynamic Threshold Drift of SiC MOSFET

Xu, C., Zhong, X., Jiang, H., Qiu, G., Tang, L. J., & Ran, L. (2021) · International Conference on Energy, Electrical and Power Engineering (CEEPE) · doi:10.1109/ceepe51765.2021.9475706 · Cited by 9 · see citing works

Recovery of Quasi-Permanent Bias Temperature Instability in SiC MOSFETs and Its Physical Mechanism

Li, K., Sun, P., He, Z., Huang, X., Li, Q., Chen, L., Luo, Q., & Du, X. (2024) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2024.3394476 · Cited by 9 · see citing works

Characterization of Oxide Trapping in SiC MOSFETs Under Positive Gate Bias

Liang, Y., Zhang, Y., Zhang, J., He, X., Zhao, Y., Cui, M., Wen, H., Wang, M., & Liu, W. (2022) · IEEE Journal of the Electron Devices Society · doi:10.1109/jeds.2022.3212697 · Cited by 9 · see citing works

Knowledge generation and diffusion in science & technology: an empirical study of SiC-MOSFET based on scientific papers and patents

Pan, W., Jian, L., & Liu, T. (2022) · Technology Analysis and Strategic Management · doi:10.1080/09537325.2022.2106419 · Cited by 8 · see citing works

Characterization of Threshold Voltage Shift in SiC MOSFETs Under Nanosecond-Range Switching and Its Impact on High- Frequency Applications

Jiang, J., Tang, X., Tan, K., Hu, Z., Tian, M., Xu, Y., Li, H., Zhu, W., Li, H., Hu, C., et al. (2024) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2024.3403956 · Cited by 8 · see citing works

Characterization of BTI in SiC MOSFETs Using Third Quadrant Characteristics

Gonzalez, J. A. O., Alatise, O. M., & Mawby, P. (2019) · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · doi:10.1109/ispsd.2019.8757624 · Cited by 8 · see citing works

Influence of High-Temperature Bias Stress on Room-Temperature VT Drift Measurements in SiC Power MOSFETs

Habersat, D. B., Lelis, A. J., & Green, R. (2019) · Materials science forum · doi:10.4028/www.scientific.net/msf.963.757 · Cited by 8 · see citing works

Fast Switching SiC Cascode JFETs for EV Traction Inverters

Wu, R., Gonzalez, J. A. O., Davletzhanova, Z., Mawby, P., & Alatise, O. M. (2020) · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · doi:10.1109/apec39645.2020.9124052 · Cited by 8 · see citing works

Aging Modeling and Simulation of the Gate Switching Instability Degradation in SiC MOSFETs

García-Meré, J. R., Gómez, A. A., Roig, J., Rodríguez, J., & Rodríguez, A. (2024) · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · doi:10.1109/apec48139.2024.10509430 · Cited by 7 · see citing works

Characteristics and mechanisms of subthreshold voltage hysteresis in 4H-SiC MOSFETs*

Chen, X., Shi, B., Li, X., Fan, H.-Y., Li, C.-Z., Deng, X., Luo, H., Wu, Y., & Zhang, B. (2020) · Chinese Physics B · doi:10.1088/1674-1056/abd391 · Cited by 7 · see citing works

Package Degradation’s Impact on SiC MOSFETs Loss: A Comparison of Kelvin and Non-Kelvin Designs

Yang, F., Pu, S., Akin, B., Butler, S. W., & Wang, G. (2021) · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · doi:10.1109/apec42165.2021.9487466 · Cited by 7 · see citing works

Expansion of the Junction Temperature Measurement via the Internal Gate Resistance to a wide range of Power Semiconductors

Kestler, T., & Bakran, M. (2019) · European Conference on Power Electronics and Applications · doi:10.23919/epe.2019.8915530 · Cited by 7 · see citing works

Characterization and Modeling of BTI in SiC MOSFETs

Cornigli, D., Tallarico, A. N., Reggiani, S., Fiegna, C., SANGIORGI, E., Sanchez, L., Valdivieso, C., Consentino, G., & Crupi, F. (2019) · European Solid-State Device Research Conference · doi:10.1109/essderc.2019.8901761 · Cited by 7 · see citing works

TCAD modeling of bias temperature instabilities in SiC MOSFETs

Carangelo, G., Reggiani, S., Consentino, G., Crupi, F., & Meneghesso, G. (2021) · Solid-State Electronics · doi:10.1016/j.sse.2021.108067 · Cited by 6 · see citing works

Power-Law Time Exponent n and Time-to-Failure in 4H-SiC MOSFETs: Beyond Fixed Reaction–Diffusion Theory

Dhyani, M., Singh, S., Tzhayek, N., & Bernstein, J. B. (2025) · Micromachines · doi:10.3390/mi16121351 · Cited by 5 · see citing works

The Role of the Gate Resistance and Device Variability on the Dynamic Performance of Parallel SiC Power MOSFETs

Race, S., Nagel, M., Brandl, A. K., Kovacevic-Badstuebner, I., Popescu, D., Popescu, B., & Großner, U. (2024) · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · doi:10.1109/ispsd59661.2024.10579681 · Cited by 5 · see citing works

Comprehensive Investigations on Recovery Characteristics of Bias Temperature Instability in Planar and Trench SiC MOSFETs

Li, K., Sun, P., Zhou, X., Chen, L., & Liu, Q. (2024) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2024.3485055 · Cited by 4 · see citing works

Influence of the Gate Switching Instability Induced Threshold Voltage Drift on the Hard Switching Behavior of 1.2 kV SiC MOSFETs

Boldyrjew-Mast, R., Herrmann, C., Liu, X., Li, X., & Basler, T. (2025) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/irps48204.2025.10983112 · Cited by 4 · see citing works

A Physics-Consistent Framework for Semiconductor Device Reliability Including Multiple Degradation Mechanisms

Bernstein, J. B., Avraham, T., & Wang, B. (2026) · Micromachines · doi:10.3390/mi17030320 · Cited by 4 · see citing works

Lifetime projection for BTI assuming non-constant power law exponent

Bernstein, J. B. (2026) · Microelectronics Reliability · doi:10.1016/j.microrel.2026.116147 · Cited by 4 · see citing works

Systematic study on temperature and time-varying characteristics of SiC MOSFET static parameters at 200 °C

Ma, X., Wang, J., & Ding, L. (2023) · Journal of Power Electronics · doi:10.1007/s43236-023-00711-2 · Cited by 4 · see citing works

Dynamic Reverse Bias Test Circuit for SiC MOSFET with Adjustable dV ds/dt

Lu-Wei, Z., Hui, M., Zhou, Z., Yu, B., Haoze, L., & Xin, Z. (2024) · International Power Electronics and Motion Control Conference (EPE-PEMC) · doi:10.1109/ipemc-ecceasia60879.2024.10567430 · Cited by 4 · see citing works

Impact of Degradation Mechanisms in Gate Stress Tests on the Hard-Switching Behavior of 1.2 kV SiC Power MOSFETs

Boldyrjew-Mast, R., Bäumler, C., Wenisch-Kober, F. B., Liu, X., & Basler, T. (2022) · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · doi:10.1109/ispsd49238.2022.9813675 · Cited by 4 · see citing works

Online Monitoring Method for SiC MOSFET Gate Oxide Degradation Based on Gate Voltage Filtering

Liu, J., Yao, B., Wei, X., Zhang, Y., & Wang, H. (2024) · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · doi:10.1109/apec48139.2024.10509036 · Cited by 4 · see citing works

Crosstalk in SiC Power MOSFETs for Evaluation of Threshold Voltage Shift Caused by Bias Temperature Instability

Gonzalez, J. A. O., & Alatise, O. M. (2019) · European Conference on Power Electronics and Applications · doi:10.23919/epe.2019.8915508 · Cited by 4 · see citing works

Degradation Behaviors Comparation and Analysis of Two Typical Trench SiC MOSFETs Under High Gate Voltage Stress

Liao, P., Wang, Y., Guo, J.-B., Sun, Q., Zhang, D. W., & Xu, H. (2025) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2025.3649972 · Cited by 3 · see citing works

Power-Law Degradation and Lifetime Interpretation in Microelectronics Reliability

Bernstein, J. B. (2026) · Applied Sciences · doi:10.3390/app16115387 · Cited by 3 · see citing works

Threshold Voltage Monitoring Method for SiC MOSFET Based on Body Diode Voltage under Body Effect

Xin, J., Zheng, L., Dai, Q., Du, M., Ouyang, Z., & Zhou, E. (2021) · IEEE International Electrical and Energy Conference (CIEEC) · doi:10.1109/cieec50170.2021.9510634 · Cited by 3 · see citing works

On the origin of drain current transients and subthreshold sweep hysteresis in 4H-SiC MOSFETs

Rasinger, F., Hauck, M., Rescher, G., Aichinger, T., Weber, H. B., Krieger, M., & Gregor Pobegen, A. (2019) · Applied Physics Letters · doi:10.1063/1.5117829 · Cited by 3 · see citing works

Non-Intrusive Methodologies for Characterization of Bias Temperature Instability in SiC Power MOSFETs

Gonzalez, J. A. O., Alatise, O. M., & Mawby, P. (2020) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/irps45951.2020.9129637 · Cited by 3 · see citing works

Decoupling Effects for Dynamic Switching Stress in SiC MOSFETs

Gómez, A. A., García-Meré, J. R., Rodríguez, A., Rodríguez, J., Jiménez-Guerra, C., & Roig, J. (2025) · IEEE Transactions on Industry Applications · doi:10.1109/tia.2025.3534183 · Cited by 2 · see citing works

An Investigation Into the Mechanism of AC Bias Temperature Instability in SiC MOSFETs Through Gate Charging Characteristics

Wang, Z., Chen, C., Ye, X., Du, J., Niu, H., Zhai, G., Alcaide, A. M., Leon, J. I., & Franquelo, L. G. (2025) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2025.3604592 · Cited by 2 · see citing works

Trade-offs Between Gate Oxide Protection and Performance in SiC MOSFETs

Gonzalez, J. A. O., Wu, R., & Alatise, O. M. (2020) · IEEE Energy Conversion Congress and Exposition (ECCE) · doi:10.1109/ecce44975.2020.9235843 · Cited by 2 · see citing works

Physical Modeling of Threshold Voltage Shift during Recovery Phase in SiC-based Transistors

Mao, L. (2025) · Semiconductors · doi:10.1134/s1063782624602930 · Cited by 2 · see citing works

Bias-Induced Instability of 4H-SiC CMOS

Wen, Y. X., & Tsui, B. Y. (2023) · Materials science forum · doi:10.4028/p-t5m16p · Cited by 2 · see citing works

Novel Method for Evaluation of Negative Bias Temperature Instability of SiC MOSFETs

Gonzalez, J. A. O., Alatise, O. M., & Mawby, P. (2019) · Materials science forum · doi:10.4028/www.scientific.net/msf.963.749 · Cited by 2 · see citing works

Investigation of Threshold Voltage Shift for SiC MOSFET in Switching Operation

Jin, R., Ren, N., Xu, H., & Sheng, K. (2023) · IEEE International Power Electronics and Application Symposium (PEAS) · doi:10.1109/peas58692.2023.10395298 · Cited by 1 · see citing works

Investigations of Off-line Calibration and Consistency of SiC MOSFETs with Different Gate Structures

Liao, Y., Xu, Z., Wang, H., Ge, X., & Wang, Y. (2024) · International Power Electronics and Motion Control Conference (EPE-PEMC) · doi:10.1109/ipemc-ecceasia60879.2024.10567893 · Cited by 1 · see citing works

Long-term positive and negative gate bias stress tests on parallel connected SiC MOSFETs at −40 °C and 175 °C

Deb, A., Taha, M., Gonzalez, J. A. O., Mawby, P., Jahdi, S., Etoz, B., & Alatise, O. M. (2025) · Microelectronics Reliability · doi:10.1016/j.microrel.2025.115834 · Cited by 1 · see citing works

Dynamic Current Balancing Methodfor Parallel SiC MOSFETs Based on Threshold Voltage Sorting underAsymmetric Layout

Li, Y., Zhang, Y., Zhao, B., Sun, P., Zhao, Z., Li, X., Cai, Y., Xu, C., & Chen, Y. (2025) · IEEE International Electrical and Energy Conference (CIEEC) · doi:10.1109/cieec64805.2025.11116658 · Cited by 1 · see citing works

Bias Temperature Instability of SiC Trench MOSFET under DC and AC gate stress

Yu, K., Wang, Q., Wang, Y., & Wang, J. (2025) · IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) · doi:10.1109/wipda-asia63772.2025.11183909 · Cited by 1 · see citing works

A 6.5 kV/100A Low‐Inductance SiC MOSFET Power Module With Integrated Current Monitoring for Parallel Chips

Zhang, Y., An, K., Li, Y., Tian, B., Qu, Z., Sun, P., Zhao, B., Cai, Y., & Zhao, Z. (2025) · IET Power Electronics · doi:10.1049/pel2.70116 · Cited by 1 · see citing works

Correlation of trap generation in SiC MOSFETs under γ-ray irradiation and bias temperature stress

Liang, X., Zhang, D., Wei, Y., Feng, J., Zheng, Q., Wen, L., Yu, X., Guo, Q., Zhang, T., & Li, Y. (2026) · Microelectronics Reliability · doi:10.1016/j.microrel.2026.116007 · Cited by 1 · see citing works

Reliability of Wide Bandgap Semiconductors for Automotive Applications

Kaminski, N., Basler, T., Boldyrjew-Mast, R., El-Barbari, S., Franke, J., Rittner, M., Salmen, P., Schmitt, S., Senftleben, O., Tuellmann, M., et al. (2026) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2026.3672721 · Cited by 1 · see citing works

Linearization of BTI Degradation Across Si, SiC, and GaN

Bernstein, J. B., Avraham, T., & Wang, B. (2026) · Micro · doi:10.3390/micro6020031 · Cited by 1 · see citing works

Comparative Investigation on Device-Level Failure of Three Typical SiC MOSFETs Under Single Surge Current Stress

He, L., Zhang, M., Li, C., Niu, H., Shi, Y., Chen, X., Fang, S., Wang, Z., & Chen, Y. (2026) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2026.3706282 · Cited by 1 · see citing works

A New Method of The Active Gate Driver for Current Balancing in The Parallel MOSFET Circuits

Sulistyo, M. E., Kaleg, S., Waskitho, D. A., Ristiana, R., Muharam, A., Budiman, A. C., Sudirja, S., Amin, A., & Ismail, K. (2023) · Evergreen · doi:10.5109/7151765 · Cited by 1 · see citing works

OPTIMISATION OF THE GATE VOLTAGE IN SiC MOSFETS: EFFICIENCY VS RELIABILITY

Gonzalez, J. A. O., Wu, R., Wu, H., Wang, X., Pickert, V., Mawby, P., & Alatise, O. M. (2021) · IET conference proceedings. · doi:10.1049/icp.2021.1043 · Cited by 1 · see citing works

Investigation on SiC MOSFETs with Long Time Nitridation Treatment under Dynamic High Temperature Gate Stress

Wu, Z., Liang, S., Deng, G., & Wang, J. (2022) · IEEE International Power Electronics and Application Conference and Exposition (PEAC) · doi:10.1109/peac56338.2022.9959397 · Cited by 1 · see citing works

Threshold voltage hysteresis in SiC MOSFETs and its impact on circuit operation

Puschkarsky, K., Reisinger, H., Aichinger, T., Gustin, W., & Grasser, T. (2017) · IEEE International Integrated Reliability Workshop final report · doi:10.1109/iirw.2017.8361232 · Cited by 40 · see citing works

Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs

Puschkarsky, K., Grasser, T., Aichinger, T., Gustin, W., & Reisinger, H. (2018) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/irps.2018.8353560 · Cited by 56 · see citing works

Determination of the Transient Threshold Voltage Hysteresis in SiC MOSFETs after Positive and Negative Gate Bias

Unger, C., & Pfost, M. (2019) · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · doi:10.1109/ispsd.2019.8757661 · Cited by 20 · see citing works

Accurate Evaluation of Threshold Voltage Hysteresis in SiC MOSFET Under Switching Stress

Li, X., Deng, X., Huang, J., Li, X., Chen, W., & Zhang, B. (2024) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2024.3409570 · Cited by 6 · see citing works

Threshold voltage hysteresis investigation of SiC MOSFETs with different structures under various measurement conditions

Xie, D., Heimler, P., Boldyrjew-Mast, R., Alaluss, M., Thiele, S., Lutz, J., & Basler, T. (2025) · Microelectronics Reliability · doi:10.1016/j.microrel.2025.115657 · Cited by 8 · see citing works