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The statistical analysis of individual defects constituting NBTI and its implications for modeling DC- and AC-stress
Abstract
The physical origin of the Negative Bias Temperature Instability (NBTI) is still under debate. In this work we analyze the single defects constituting NBTI. We introduce a new measurement technique stimulating a charging of these defects. By employing a statistical analysis of many stochastic stimulation processes of the same defect we are able to determine the electric field and the temperature dependence of these defects with great precision. Based on our experiments we present and verify a new, physics-based, quantitative model allowing a precise prediction of NBTI degradation and recovery. This model takes the stress history into account and also provides a prediction for degradation due to AC-NBTI and an understanding of the special features seen in conjunction with AC-NBTI.
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Electronic properties of two-dimensional systems
Ando, T., Fowler, A. B., & Stern, F. (1982) · Reviews of Modern Physics · doi:10.1103/revmodphys.54.437 · Cited by 7,455
Cited by
Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities
Grasser, T. (2012) · Microelectronics Reliability · doi:10.1016/j.microrel.2011.09.002 · Cited by 554
Self-citationThreshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs
Aichinger, T., Rescher, G., & Pobegen, G. (2018) · Microelectronics Reliability · doi:10.1016/j.microrel.2017.11.020 · Cited by 278
Understanding BTI in SiC MOSFETs and Its Impact on Circuit Operation
Puschkarsky, K., Reisinger, H., Aichinger, T., Gustin, W., & Grasser, T. (2018) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2018.2813063 · Cited by 115
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Metadata
- Authors
- Reisinger, H., Grasser, T., Gustin, W., & Schlunder, C.
- Venue
- 2010 IEEE International Reliability Physics Symposium
- Publisher
- IEEE
- Published
- 2010-05
- Pages
- 7-15
- ISSN
- 0735-0791 (ISSN-L)
- OpenAlex
- W2040887205
- Cited by
- 204
- References
- 1
- FWCI
- 29.70
- Type
- conference paper
- Language
- en
- Open access
- closed
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- Reisinger, H., Grasser, T., Gustin, W., & Schlunder, C. (2010). The statistical analysis of individual defects constituting NBTI and its implications for modeling DC- and AC-stress. 2010 IEEE International Reliability Physics Symposium. https://doi.org/10.1109/irps.2010.5488858
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