The DOI matches its Crossref record; 32 of the 32 references it cites were found in a registry or an index.
Microchannel cooling strategies for high heat flux (1 kW/cm2) power electronic applications
Abstract
The wide band-gap (WBG) semiconductor electronics such as silicon carbide (SiC) and gallium nitride (GaN) are becoming more popular in power electronics applications due to their excellent functionality at higher operating temperatures, powers, frequencies and in high radiation environments compared to Si devices. However, the continued drive for higher device and packaging densities has led to extreme heat fluxes on the order of 1 kW/cm2that requires aggressive microchannel cooling strategies in order to maintain the device junction temperature below acceptable limits. A reduced order single/two phase thermal-fluidic model is developed to investigate the effect of micro-channel geometry parameters, packaging materials and fluid flow conditions on the cooling performance of various cooling strategies. Water and R245fa refrigerant are used as singleand two-phase working fluids, respectively. We consider three cooling strategies: · Design A: copper cold-plate micro-channel module bonded to the device substrate · Design B: embedded micro-channels directly etched into the device substrate and · Design C: embedded micro-channels with a 3D manifold with inlet and outlet module. The proposed embedded micro-channels with 3D-manifold with R245fa working fluid has the potential to achieve the lowest thermal resistance ~0.07 K/W and pressure drop ~10 kPa for flow rate Q ~ 0.21 l/min (Tin= 90 °C) and exit quality x = 0.44.
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Embedded microchannels have demonstrated up to a 43% reduction in thermal resistance while mitigating self-heating and thermal coupling in dense power modules.
“Microchannel cooling routes coolant through tens to hundreds of µ mchannels etched in or beneath the substrate; embedded microchannels further shorten the conduction path and have demonstrated up to a 43% [29] reduction in thermal resistance while mitigating self-heating and thermal coupling in dense power modules [55-58].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [55]
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Cited by
Sorted by citations
Han, G., Kim, J., Park, S., & Bae, W. (2025) · Electronics · doi:10.3390/electronics14214193 · Cited by 34
“…near-junction cooling • Shortens thermal path [29] • High fabrication complexity and cost • Large pressure drop • Potential channel clogging [55] • High-frequency RF amplifiers (e.g., GaN MMIC) • Dense power modules [29] Direct Liquid • R th reduction: ≈ 30% (vs. indirect) [51] • Eliminates…”
Metadata
- Authors
- Jung, K. W., Kharangate, C. R., Lee, H., Palko, J., Zhou, F., Asheghi, M., Dede, E. M., & Goodson, K. E.
- Affiliations
- Stanford University (US)
- Toyota Motor North America Research & Development (United States) (US)
- ORCID
- Venue
- 2017 16th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm)
- Publisher
- IEEE
- Published
- 2017-05
- Pages
- 98-104
- ISSN
- 1087-9870 (ISSN-L)
- OpenAlex
- W2743632060
- Cited by
- 39
- References
- 32
- Citations by year
- 2026: 1 · 2025: 5 · 2024: 3 · 2023: 6 · 2022: 8 · 2021: 5 · 2020: 4 · 2019: 4 · 2018: 2 · 2017: 1
- FWCI
- 7.07
- Type
- conference paper
- Language
- en
- Open access
- closed
- Locations
- I-THERM :/I-THERM - Intersociety Conference on Thermal Phenomena in Electronic Systems (publishedVersion)
- Funders
- Toyota Research Institute, North America
- Topics
- Physical Sciences › Engineering › Mechanical Engineering › Heat Transfer and Boiling Studies
- Physical Sciences › Engineering › Mechanical Engineering › Heat Transfer and Optimization
- Physical Sciences › Engineering › Computational Mechanics › Heat transfer and supercritical fluids
- Keywords
- microchannel cooling, high heat flux, power electronics packaging, wide bandgap semiconductors, silicon carbide, gallium nitride, two-phase cooling, water cooling, embedded microchannels, thermal resistance, pressure drop, junction temperature
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