Cited by 154Advanced DC-DC ConvertersMultilevel Inverters and ConvertersSilicon Carbide Semiconductor Technologies

A Modular SiC High-Frequency Solid-State Transformer for Medium-Voltage Applications: Design, Implementation, and Testing

Open access
Dong, Dong, Agamy, Mohammed, Bebic, Jovan Z., Chen, Qin, Mandrusiak, Gary·2019·IEEE Journal of Emerging and Selected Topics in Power Electronics

Abstract

The advancements in wide-bandgap devices are enabling applications of power electronic converters coupled directly with medium-voltage (MV) grids that incorporate galvanic isolation within the converter using high-frequency solid-state transformers (SSTs). This paper presents analysis, design, and the characterization results of a 50-kVA modular soft-switched ac-ac SST using silicon carbide (SiC) MOSFET for MV (>6 kV ac) applications. The SST is comprised of two hard-switched ac-line interface bridges and a resonant dc-dc stage switched at approximately 180 kHz. To minimize the cost of switching elements per ampere and maximize the design flexibility, the design uses multiple discrete SiC devices of, readily available, 1700-V ratings. This paper covers the analysis of soft-switching operation, control architecture, converter design, and system-level integration.

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Crossref · 10.1109/jestpe.2019.2896046

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Research works printed but not linked: 3

  1. J. W. Kolar, J. E. Huber, "Solid-state Transformer -Key Design Challenge, Applicability, and Future Concepts," IEEE Applied Power Electronics Conference, 2016.
  2. Engel, M. Victor, G. Bachmann, "15kV/16.7Hz energy supply system with medium frequency transformer and 6.5 KV IGBTs in resonant operation," European Conference on Power Electronics and Applications (EPE), 2001.
  3. IEEE Std. C57.12.01-2015 "IEEE Standard for General Requirement for Dry-Type Distribution and Power Transformers,"

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Authors
Dong, D., Agamy, M., Bebic, J. Z., Chen, Q., & Mandrusiak, G.
Affiliations
  • General Electric (United States) (US)
  • Applied Materials (United States) (US)
Venue
IEEE Journal of Emerging and Selected Topics in Power Electronics
Published
2019-06
Volume
7
Issue
2
Pages
768-778
ISSN
  • 2168-6777 (ISSN-L)
  • 2168-6785
OpenAlex
W2912474914
Cited by
154
References
23
Citations by year
2026: 9 · 2025: 20 · 2024: 30 · 2023: 31 · 2022: 19 · 2021: 23 · 2020: 17 · 2019: 5
FWCI
5.75
Type
journal article
Language
en
Open access
Locations
  • IEEE Journal of Emerging and Selected Topics in Power Electronics (publishedVersion)
  • OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) (submittedVersion)
Funders
U.S. Department of Energy (DE-EE0007252)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced DC-DC Converters
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Multilevel Inverters and Converters
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
Keywords
solid-state transformer, SiC MOSFET, medium-voltage distribution networks, soft switching, AC-AC converter, galvanic isolation, modular converter, wide bandgap devices, system integration

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