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Cited by 10Silicon Carbide Semiconductor TechnologiesGaN-based semiconductor devices and materialsIntegrated Circuits and Semiconductor Failure Analysis

The DOI matches its Crossref record; 19 of the 19 references it cites were found in a registry or an index.

Investigation of Performance Degradation in 600-V HD-GITs Under Power Cycling Tests

Huang, Xu, Sun, Pengju, He, Zhiyuan, Lu, Guoguang, Du, Xiong, Luo, Quanming·2023·IEEE Journal of Emerging and Selected Topics in Power Electronics
DOI 10.1109/jestpe.2022.3213550
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Abstract

Hybrid drain-embedded gate injection transistors (HD-GITs) are one of the most promising technologies for normally-OFF operation. However, the relevant reliability research is relatively lacking. In this article, comprehensive results of degradation performance in 600-V HD-GITs are presented. First, the thermomechanical stress is applied to the device under test (DUT) through an accelerated power cycling test (PCT) setup. Then, thermal and electrical parameters shift under the PCTs are monitored periodically by the PCT setup and the curve tracer. As can be seen from the measurement results, as the PCT progresses, the device not only exhibits package-level degradation, but chip-level degradation also occurs gradually. Notably, leakage current that increases with degradation appears to be a potential choice for lifetime modeling. Finally, the state-of-the-art failure analysis (FA) techniques, such as emission microscopy (EMMI), scanning electron microscope (SEM), focused ion beam (FIB) cutting, and others, are performed. The results of FAs validated the monitoring data, and the root cause of the degradation of the thermal resistance and electrical parameters was eventually confirmed as the solder degradation and the structural damage of the source and gate. Such an investigation can serve as a valuable reference for the reliability of GaN power devices.

Overview

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Registry

Crossref · 10.1109/jestpe.2022.3213550

Cites

19 of 19 references verified0 citation errors · 0 not checkable

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Claims other papers make about this one

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  • A hybrid-drain (HD) approach, embedding a p-GaN layer in the drain contact to inject holes during OFF-state and semi-on state operation, can suppress the ON-resistance increase by counteracting electron trapping.

    “One approach to suppress the ON-resistance increase is the use of a hybrid-drain (HD) [35], where a p-GaN layer is embedded in the drain contact to inject holes during OFF-state and semi-on state operation. This allows to counteract the electron trapping, thus preserving the ON-resistance.”

    From Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives (2024) · cites this paper as [35]

Citations

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Research works printed but not linked: 3

  1. Boldyrjew-Mast, Reliability of GaN GIT devices in power cycling tests with RDS(on)(T) and VGS(T) for junction temperature calculation, 1
  2. Franke, Advanced temperature estimation in low Rds,on p-GaN HEMT devices for performing power cycling tests, 473
  3. 2018, GaN Power Transistors White Paper, Version 1.0

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Metadata

Authors
Huang, X., Sun, P., He, Z., Lu, G., Du, X., & Luo, Q.
Affiliations
  • Chongqing University (CN)
  • China Electronic Product Reliability and Environmental Test Institute (CN)
ORCID
Venue
IEEE Journal of Emerging and Selected Topics in Power Electronics
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Published
2023-02
Volume
11
Issue
1
Pages
1111-1120
ISSN
  • 2168-6777 (ISSN-L)
  • 2168-6785
DOI
10.1109/jestpe.2022.3213550
OpenAlex
W4312633523
Cited by
10
References
19
Citations by year
2026: 1 · 2025: 2 · 2024: 6 · 2023: 1
FWCI
0.62
Type
journal article
Language
en
Open access
closed
Licence
Locations
IEEE Journal of Emerging and Selected Topics in Power Electronics (publishedVersion)
Funders
Key-Area Research and Development Program of Guangdong Province (2020B010173001)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
  • Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Integrated Circuits and Semiconductor Failure Analysis
Keywords
GaN power devices, power cycling test, performance degradation, thermo-mechanical stress, leakage current, lifetime modeling, thermal resistance, failure analysis, normally-off transistors

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