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Cited by 1,686

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On-chip high-voltage generation in MNOS integrated circuits using an improved voltage multiplier technique

Dickson, J.F.·1976·IEEE Journal of Solid-State Circuits

Abstract

An improved voltage multiplier technique has been developed for generating +40 V internally in p-channel MNOS integrated circuits to enable them to be operated from standard +5- and -12-V supply rails. With this technique, the multiplication efficiency and current driving capability are both independent of the number of multiplier stages. A mathematical model and simple equivalent circuit have been developed for the multiplier and the predicted performance agrees well with measured results. A multiplier has already been incorporated into a TTL compatible nonvolatile quad-latch, in which it occupies a chip area of 600 /spl mu/m/spl times/240 /spl mu/m. It is operated with a clock frequency of 1 MHz and can supply a maximum load current of about 10 /spl mu/A. The output impedance is 3.2 M/spl Omega/.

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Crossref · 10.1109/jssc.1976.1050739

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Metadata

Authors
Dickson, J. F.
Venue
IEEE Journal of Solid-State Circuits
Published
1976-06
Volume
11
Issue
3
Pages
374-378
ISSN
0018-9200 (ISSN-L)
OpenAlex
W2111323554
Cited by
1,686
References
0
FWCI
0.58
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: On-chip high-voltage generation in MNOS integrated circuits using an improved voltage multiplier technique. https://app.cochat.ai/papers/10.1109/jssc.1976.1050739
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Dickson, J. F. (1976). On-chip high-voltage generation in MNOS integrated circuits using an improved voltage multiplier technique. IEEE Journal of Solid-State Circuits. https://doi.org/10.1109/jssc.1976.1050739

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.