A MM-sized implantable medical device (IMD) with ultrasonic power transfer and a hybrid bi-directional data link
Abstract
A first proof-of-concept mm-sized implantable device using ultrasonic power transfer and a hybrid bi-directional data communication link is presented. Ultrasonic power transfer enables miniaturization of the implant and operation deep inside the body, while still achieving safe and high power levels (100 μW to a few mWs) required for most implant applications. The current implant prototype measures 4 mm ×7.8 mm and is comprised of a piezoelectric receiver, an IC designed in 65 nm CMOS process and an off-chip antenna. The IC can support a maximum DC load of 100 μW for an incident acoustic intensity that is ~ 5% of the FDA diagnostic limit. This demonstrates the feasibility of providing further higher available DC power, potentially opening up new implant applications. The proposed hybrid bi-directional data link consists of ultrasonic downlink and RF uplink. Falling edge of the ultrasound input is detected as downlink data. The implant transmits an ultra-wideband (UWB) pulse sequence as uplink data, demonstrating capability of implementing an energy-efficient M-ary PPM transmitter in the future.
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Higher available DC power levels between 100 μW and a few mWs are feasible.
“This implant supported a DC load up to 100 μW, suggesting the feasibility for higher available DC power levels between 100 μW to a few mWs (Charthad et al., 2015).”
From Comparative analysis of energy transfer mechanisms for neural implants (2024) · cites this paper as Charthad et al., 2015
A Stanford implant with dimensions 4 mm × 7.8 mm operated at an incident acoustic intensity within 5% of the FDA diagnostic limit.
“For example researchers at Stanford University featured an implant with dimensions of 4 mm × 7.8 mm that operated at an incident acoustic intensity within 5% of the FDA diagnostic limit.”
From Comparative analysis of energy transfer mechanisms for neural implants (2024) · cites this paper as Charthad et al., 2015
The Stanford implant supported a DC load up to 100 μW.
“This implant supported a DC load up to 100 μW, suggesting the feasibility for higher available DC power levels between 100 μW to a few mWs (Charthad et al., 2015).”
From Comparative analysis of energy transfer mechanisms for neural implants (2024) · cites this paper as Charthad et al., 2015
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- Authors
- Charthad, J., Weber, M. J., Chang, T. C., & Arbabian, A.
- Affiliations
- Stanford University (US)
- Venue
- IEEE Journal of Solid-State Circuits
- Published
- 2015-08
- Volume
- 50
- Issue
- 8
- Pages
- 1741-1753
- ISSN
- 0018-9200 (ISSN-L)
- 1558-173X
- OpenAlex
- W1583855207
- Cited by
- 245
- References
- 40
- Citations by year
- 2026: 10 · 2025: 18 · 2024: 22 · 2023: 23 · 2022: 20 · 2021: 31 · 2020: 31 · 2019: 20 · 2018: 27 · 2017: 24 · 2016: 17 · 2015: 2
- FWCI
- 11.61
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- IEEE Journal of Solid-State Circuits (publishedVersion)
- Topics
- Physical Sciences › Engineering › Biomedical Engineering › Wireless Body Area Networks
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Wireless Power Transfer Systems
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Radio Frequency Integrated Circuit Design
- Keywords
- biomedical implants, ultrasonic power transfer, piezoelectric receiver, M-ary pulse position modulation, energy-efficient transmitter, 65 nm CMOS, device miniaturization
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