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Matching properties of MOS transistors
Abstract
The matching properties of the threshold voltage, substrate factor, and current factor of MOS transistors have been analyzed and measured. Improvements to the existing theory are given, as well as extensions for long-distance matching and rotation of devices. Matching parameters of several processes are compared. The matching results have been verified by measurements and calculations on several basic circuits.>
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Cited by
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Metadata
- Authors
- Pelgrom, M. J. M., Duinmaijer, A. C. J., & Welbers, A. P. G.
- Venue
- IEEE Journal of Solid-State Circuits
- Published
- 1989-10
- Volume
- 24
- Issue
- 5
- Pages
- 1433-1439
- ISSN
- 0018-9200 (ISSN-L)
- OpenAlex
- W2140823559
- Cited by
- 3,319
- References
- 0
- FWCI
- 12.50
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Matching properties of MOS transistors. https://app.cochat.ai/papers/10.1109/jssc.1989.572629
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- Pelgrom, M. J. M., Duinmaijer, A. C. J., & Welbers, A. P. G. (1989). Matching properties of MOS transistors. IEEE Journal of Solid-State Circuits. https://doi.org/10.1109/jssc.1989.572629
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