The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
30-W/mm GaN HEMTs by Field Plate Optimization
Abstract
GaN high-electron-mobility-transistors (HEMTs) on SiC were fabricated with field plates of various dimensions for optimum performance. Great enhancement in radio frequency (RF) current-voltage swings was achieved with acceptable compromise in gain, through both reduction in the trapping effect and increase in breakdown voltages. When biased at 120 V, a continuous wave output power density of 32.2 W/mm and power-added efficiency (PAE) of 54.8% at 4 GHz were obtained using devices with dimensions of 0.55×246 μm2and a field-plate length of 1.1 μm. Devices with a shorter field plate of 0.9 μm also generated 30.6 W/mm with 49.6% PAE at 8 GHz. Such ultrahigh power densities are a dramatic improvement over the 10-12 W/mm values attained by conventional gate GaN-based HEMTs.
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Cites
High electron mobility transistor based on a GaN-Al x Ga1−x N heterojunction
Asif Khan, M., Bhattarai, A., Kuznia, J. N., & Olson, D. T. (1993) · Applied Physics Letters · doi:10.1063/1.109775 · Cited by 911
Cited by
GaN-based power devices: Physics, reliability, and perspectives
Meneghini, M., De Santi, C., Abid, I., Buffolo, M., Cioni, M., Khadar, R. A., Nela, L., Zagni, N., Chini, A., Medjdoub, F., et al. (2021) · Journal of Applied Physics · doi:10.1063/5.0061354 · Cited by 723
High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates
Dora, Y., Chakraborty, A., Mccarthy, L., Keller, S., Denbaars, S. P., & Mishra, U. K. (2006) · IEEE Electron Device Letters · doi:10.1109/led.2006.881020 · Cited by 448
Self-citation1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance
Chu, R., Corrion, A., Chen, M., Li, R., Wong, D., Zehnder, D., Hughes, B., & Boutros, K. (2011) · IEEE Electron Device Letters · doi:10.1109/led.2011.2118190 · Cited by 367
Sarua, A., Ji, H., Kuball, M., Uren, M. J., Martin, T., Hilton, K. P., & Balmer, R. S. (2006) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2006.882274 · Cited by 267
AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources
El Fatimy, A., Dyakonova, N., Meziani, Y., Otsuji, T., Knap, W., Vandenbrouk, S., Madjour, K., Théron, D., Gaquiere, C., Poisson, M. A., et al. (2010) · Journal of Applied Physics · doi:10.1063/1.3291101 · Cited by 160
Metadata
- Authors
- Wu, Y.-F., Saxler, A., Moore, M., Smith, R. P., Sheppard, S., Chavarkar, P. M., Wisleder, T., Mishra, U. K., & Parikh, P.
- Venue
- IEEE Electron Device Letters
- Published
- 2004-03
- Volume
- 25
- Issue
- 3
- Pages
- 117-119
- ISSN
- 0741-3106 (ISSN-L)
- OpenAlex
- W2135780270
- Cited by
- 1,104
- References
- 1
- FWCI
- 71.67
- Type
- journal article
- Language
- en
- Open access
- closed
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- Wu, Y.-F., Saxler, A., Moore, M., Smith, R. P., Sheppard, S., Chavarkar, P. M., Wisleder, T., Mishra, U. K., & Parikh, P. (2004). 30-W/mm GaN HEMTs by Field Plate Optimization. IEEE Electron Device Letters. https://doi.org/10.1109/led.2003.822667
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