The DOI matches its Crossref record; 3 of the 3 references it cites were found in a registry or an index.
High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates
Abstract
A self-aligned "slant-field-plate" technology is presented as an improvement over the discrete multiple field plates for high breakdown voltage AlGaN/GaN HEMTs. Devices were tested in Fluorinert to eliminate the breakdown of air, which was identified to limit the breakdown voltage in AlGaN/GaN HEMTs. A single integrated field plate, which is self-aligned with the gate, is shown to support more than a kilovolt breakdown voltage (Vbrup to 1900 V was measured with Fluorinert). Devices made with this technology show a good large signal-frequency behavior. Various issues regarding breakdown measurements and interpretation of measurement results are presented
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Citations
Cites
30-W/mm GaN HEMTs by Field Plate Optimization
Wu, Y.-F., Saxler, A., Moore, M., Smith, R. P., Sheppard, S., Chavarkar, P. M., Wisleder, T., Mishra, U. K., & Parikh, P. (2004) · IEEE Electron Device Letters · doi:10.1109/led.2003.822667 · Cited by 1,104
Self-citationHigh breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior
Saito, W., Takada, Y., Kuraguchi, M., Tsuda, K., Omura, I., Ogura, T., & Ohashi, H. (2003) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2003.819248 · Cited by 414
High Breakdown Voltage AlGaN–GaN HEMTs Achieved by Multiple Field Plates
Xing, H., Dora, Y., Chini, A., Heikman, S., Keller, S., & Mishra, U. K. (2004) · IEEE Electron Device Letters · doi:10.1109/led.2004.824845 · Cited by 360
Self-citation
Cited by
GaN-based power devices: Physics, reliability, and perspectives
Meneghini, M., De Santi, C., Abid, I., Buffolo, M., Cioni, M., Khadar, R. A., Nela, L., Zagni, N., Chini, A., Medjdoub, F., et al. (2021) · Journal of Applied Physics · doi:10.1063/5.0061354 · Cited by 723
A Review of GaN HEMT Dynamic On-Resistance and Dynamic Stress Effects on Field Distribution
Gill, L., DasGupta, S., Neely, J. C., Kaplar, R. J., & Michaels, A. J. (2024) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2023.3318182 · Cited by 68
Abid, I., Canato, E., Meneghini, M., Meneghesso, G., Cheng, K., & Medjdoub, F. (2021) · Applied Physics Express · doi:10.35848/1882-0786/abdca0 · Cited by 13
Metadata
- Authors
- Dora, Y., Chakraborty, A., Mccarthy, L., Keller, S., Denbaars, S. P., & Mishra, U. K.
- Venue
- IEEE Electron Device Letters
- Published
- 2006-09
- Volume
- 27
- Issue
- 9
- Pages
- 713-715
- ISSN
- 0741-3106 (ISSN-L)
- OpenAlex
- W2167950345
- Cited by
- 448
- References
- 3
- FWCI
- 15.31
- Type
- journal article
- Language
- en
- Open access
- closed
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- The paper
- Dora, Y., Chakraborty, A., Mccarthy, L., Keller, S., Denbaars, S. P., & Mishra, U. K. (2006). High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates. IEEE Electron Device Letters. https://doi.org/10.1109/led.2006.881020
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