The DOI matches its Crossref record.
High Breakdown Voltage AlGaN–GaN HEMTs Achieved by Multiple Field Plates
Open accessAbstract
High-voltage Al/sub 0.22/Ga/sub 0.78/N-GaN high-electron mobility transistors have been fabricated using multiple field plates over dielectric passivation layers. The device breakdown voltage was found to increase with the addition of the field plates. With two field plates, the device showed a breakdown voltage as high as 900 V. This technique is easy to apply, based on the standard planar transistor fabrication, and especially attractive for the power switching applications.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cited by
Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
Pearton, S. J., Ren, F., Tadjer, M., & Kim, J. (2018) · Journal of Applied Physics · doi:10.1063/1.5062841 · Cited by 659
High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates
Dora, Y., Chakraborty, A., Mccarthy, L., Keller, S., Denbaars, S. P., & Mishra, U. K. (2006) · IEEE Electron Device Letters · doi:10.1109/led.2006.881020 · Cited by 448
Self-citation1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance
Chu, R., Corrion, A., Chen, M., Li, R., Wong, D., Zehnder, D., Hughes, B., & Boutros, K. (2011) · IEEE Electron Device Letters · doi:10.1109/led.2011.2118190 · Cited by 367
A Review of GaN HEMT Dynamic On-Resistance and Dynamic Stress Effects on Field Distribution
Gill, L., DasGupta, S., Neely, J. C., Kaplar, R. J., & Michaels, A. J. (2024) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2023.3318182 · Cited by 68
Metadata
- Authors
- Xing, H., Dora, Y., Chini, A., Heikman, S., Keller, S., & Mishra, U. K.
- Venue
- IEEE Electron Device Letters
- Published
- 2004-04
- Volume
- 25
- Issue
- 4
- Pages
- 161-163
- ISSN
- 0741-3106 (ISSN-L)
- OpenAlex
- W2152320292
- Cited by
- 360
- References
- 0
- FWCI
- 9.95
- Type
- journal article
- Language
- en
- Open access
- green
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: High Breakdown Voltage AlGaN–GaN HEMTs Achieved by Multiple Field Plates. https://app.cochat.ai/papers/10.1109/led.2004.824845
- The paper
- Xing, H., Dora, Y., Chini, A., Heikman, S., Keller, S., & Mishra, U. K. (2004). High Breakdown Voltage AlGaN–GaN HEMTs Achieved by Multiple Field Plates. IEEE Electron Device Letters. https://doi.org/10.1109/led.2004.824845
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
