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Ten-Nanometer Ferroelectric $\hbox{Si:HfO}_{2}$ Films for Next-Generation FRAM Capacitors
Abstract
Ferroelectric properties of Si-doped HfO2thin films (10 nm) have been investigated. The focus of this letter is to evaluate the potential applicability of these thin films for future 3-D ferroelectric random access memory capacitors. Polarization switching was tested at elevated temperatures up to 185°C and showed no severe degradation. Domain switching dynamics were electrically characterized with pulse-switching tests and were not in accordance with Kolmogorov-Avrami-type switching. Nucleation-limited switching is proposed to be applicable for these new types of ferroelectric thin films. Furthermore, same-state and opposite-state retention tests were performed at 125°C up to 20 h. It was found that samples that had previously been annealed at 800°C showed improved retention of the written state as well as of the opposite state. In addition, fatigue measurements were carried out, and no degradation occurred for 106programming and erase cycles at 3 V.
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Citations
Cited by
Stabilizing the ferroelectric phase in doped hafnium oxide
Hoffmann, M., Schroeder, U., Schenk, T., Shimizu, T., Funakubo, H., Sakata, O., Pohl, D., Drescher, M., Adelmann, C., Materlik, R., et al. (2015) · Journal of Applied Physics · doi:10.1063/1.4927805 · Cited by 606
Self-citationReview and perspective on ferroelectric HfO2-based thin films for memory applications
Park, M. H., Lee, Y. H., Mikolajick, T., Schroeder, U., & Hwang, C. S. (2018) · MRS Communications · doi:10.1557/mrc.2018.175 · Cited by 579
Self-citationMuller, J., Boscke, T. S., Muller, S., Yurchuk, E., Polakowski, P., Paul, J., Martin, D., Schenk, T., Khullar, K., Kersch, A., et al. (2013) · 2013 IEEE International Electron Devices Meeting · doi:10.1109/iedm.2013.6724605 · Cited by 506
Self-citationFerroelectricity in undoped hafnium oxide
Polakowski, P., & Müller, J. (2015) · Applied Physics Letters · doi:10.1063/1.4922272 · Cited by 419
Wake-up effects in Si-doped hafnium oxide ferroelectric thin films
Zhou, D., Xu, J., Li, Q., Guan, Y., Cao, F., Dong, X., Müller, J., Schenk, T., & Schröder, U. (2013) · Applied Physics Letters · doi:10.1063/1.4829064 · Cited by 408
Metadata
- Authors
- Mueller, S., Summerfelt, S. R., Muller, J., Schroeder, U., & Mikolajick, T.
- Venue
- IEEE Electron Device Letters
- Published
- 2012-09
- Volume
- 33
- Issue
- 9
- Pages
- 1300-1302
- ISSN
- 0741-3106 (ISSN-L)
- 1558-0563
- OpenAlex
- W2085867935
- Cited by
- 163
- References
- 0
- FWCI
- 4.48
- Type
- journal article
- Language
- en
- Open access
- closed
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- Mueller, S., Summerfelt, S. R., Muller, J., Schroeder, U., & Mikolajick, T. (2012). Ten-Nanometer Ferroelectric $\hbox{Si:HfO}_{2}$ Films for Next-Generation FRAM Capacitors. IEEE Electron Device Letters. https://doi.org/10.1109/led.2012.2204856
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