Trigger and Self-Latch Mechanisms of n-p-n Bistable Resistor
Abstract
Trigger and self-latch mechanisms in n-p-n bistable resistor (biristor) were investigated. A two terminal vertical n-p-n biristor with floating p-type base was fabricated on a bulk silicon wafer. The temperature and current compliance effects on the current-voltage characteristics were analyzed to understand the underlying physical mechanism. The fact that the current compliance is temperature independent suggests that latch-up is triggered by band-to-band tunneling. In contrast, the high temperature and current compliance diminished the latch-down and hysteresis loop, which reveals that impact ionization is responsible for self-latching at bistable regime.
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The operation of the cryptoristor relies on the mechanism of STL, which occurs when sufficient holes are provided via impact ionization under a high lateral electric field, temporarily stored in an FB, and suddenly escaped from the FB.
“The operation of the cryptoristor relies on the mechanism of STL, which occurs when a sufficient number of holes are provided via impact ionization under a high lateral electric field, temporarily stored in an FB, and suddenly escaped from the FB (33–36).”
From Cryptographic transistor for true random number generator with low power consumption (2024) · cites this paper as [36]
Cites
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Self-citationLatch-up based bidirectional npn selector for bipolar resistance-change memory
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Han, J.-K., Seo, M., Kim, W.-K., Kim, M.-S., Kim, S.-Y., Kim, M.-S., Yun, G.-J., Lee, G.-B., Yu, J.-M., & Choi, Y.-K. (2020) · IEEE Electron Device Letters · doi:10.1109/led.2019.2958623 · Cited by 127 · see citing works
Self-citationLeaky Integrate-and-Fire Biristor Neuron
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Self-citationHan, J.-K., Seo, M., Yu, J.-M., Suh, Y.-J., & Choi, Y.-K. (2020) · IEEE Electron Device Letters · doi:10.1109/led.2020.3001953 · Cited by 39 · see citing works
Self-citationCryptographic transistor for true random number generator with low power consumption
Kim, S.-I., You, H.-J., Kim, M.-S., An, U.-S., Kim, M.-S., Lee, D. H., Ryu, S.-T., & Choi, Y.-K. (2024) · Science Advances · doi:10.1126/sciadv.adk6042 · Cited by 33 · see citing works
“The operation of the cryptoristor relies on the mechanism of STL, which occurs when a sufficient number of holes are provided via impact ionization under a high lateral electric field, temporarily stored in an FB, and suddenly escaped from the FB ( 33 – 36 ).”
- Authors
- Han, J.-W., & Meyyappan, M.
- Affiliations
- Ames Research Center (US)
- Venue
- IEEE Electron Device Letters
- Published
- 2014-03
- Volume
- 35
- Issue
- 3
- Pages
- 387-389
- ISSN
- 0741-3106 (ISSN-L)
- 1558-0563
- OpenAlex
- W2000852356
- Cited by
- 24
- References
- 8
- Citations by year
- 2025: 2 · 2024: 6 · 2023: 3 · 2022: 2 · 2021: 4 · 2020: 2 · 2019: 2 · 2018: 2 · 2015: 1
- FWCI
- 0.18
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- IEEE Electron Device Letters (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Electrostatic Discharge in Electronics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Semiconductor materials and interfaces
- Keywords
- latch-up, band-to-band tunneling, impact ionization, compliance current, temperature dependence, hysteresis loops, vertical transistors, current-voltage characteristics
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