A Single Transistor Neuron With Independently Accessed Double-Gate for Excitatory-Inhibitory Function and Tunable Firing Threshold Voltage
Abstract
For the first time, a single transistor neuron (1T-neuron) with an independently accessed double-gate structure is demonstrated for excitatory-inhibitory-function, and control of the firing threshold voltage (VT,firing). The double-gate is composed of a primary gate and a secondary gate. The former is to determine an excitatory and inhibitory state as a toggle switch and the latter is to dynamically adjust VT,firing for homeostasis to sustain reliable neuromorphic operation. In addition to its conventional excitation function, the newly implemented inhibition function improves the energy efficiency of the neuromorphic network. The tunable threshold voltage for firing maintains homeostasis, even for high or low transmitted signals that are out of a desired spiking frequency range.
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The operation of the cryptoristor relies on the mechanism of STL, which occurs when sufficient holes are provided via impact ionization under a high lateral electric field, temporarily stored in an FB, and suddenly escaped from the FB.
“The operation of the cryptoristor relies on the mechanism of STL, which occurs when a sufficient number of holes are provided via impact ionization under a high lateral electric field, temporarily stored in an FB, and suddenly escaped from the FB (33–36).”
From Cryptographic transistor for true random number generator with low power consumption (2024) · cites this paper as [34]
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Cryptographic transistor for true random number generator with low power consumption
Kim, S.-I., You, H.-J., Kim, M.-S., An, U.-S., Kim, M.-S., Lee, D. H., Ryu, S.-T., & Choi, Y.-K. (2024) · Science Advances · doi:10.1126/sciadv.adk6042 · Cited by 33 · see citing works
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- Authors
- Han, J.-K., Seo, M., Yu, J.-M., Suh, Y.-J., & Choi, Y.-K.
- Affiliations
- Korea Advanced Institute of Science and Technology (KR)
- Venue
- IEEE Electron Device Letters
- Published
- 2020-08
- Volume
- 41
- Issue
- 8
- Pages
- 1157-1160
- ISSN
- 0741-3106 (ISSN-L)
- 1558-0563
- OpenAlex
- W3034236800
- Cited by
- 39
- References
- 24
- Citations by year
- 2026: 3 · 2025: 5 · 2024: 10 · 2023: 3 · 2022: 6 · 2021: 9 · 2020: 3
- FWCI
- 1.80
- Type
- journal article
- Language
- en
- Open access
- closed
- Licence
- Locations
- IEEE Electron Device Letters (publishedVersion)
- Seoul National University Open Repository (Seoul National University) (submittedVersion)
- Funders
- National Research Foundation (NRF) of Korea (2018R1A2A3075302, 2019M3F3A1A03079603)
- IC Design Education Center
- SK hynix Inc., through a research project
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
- Physical Sciences › Engineering › Biomedical Engineering › Analog and Mixed-Signal Circuit Design
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Semiconductor Devices and Circuit Design
- Keywords
- double-gate transistors, neuromorphic circuits, homeostatic regulation, energy efficiency, spiking neurons, threshold voltage control
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