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A comparison of semiconductor devices for high-speed logic
Abstract
The bipolar transistor and FET are compared, considering both today's most advanced implementations and "ultimate" scaled-down devices. The differences between the devices are quantified in terms of transconductance and intrinsic speed. Old limits are re-examined and ways of extending the devices toward their ultimate in performance are proposed. While the major emphasis is on silicon, a comparison is made with the GaAs MESFET. Other semiconductor devices are discussed in the context of "bipolar-like" and "FET-like" devices, and the HEMT is considered a very promising candidate for high-speed logic. While Josephson junction logic is not discussed at length, it is a continual point of reference. In addition to comparing devices, the on-chip wiring environment is discussed, especially concerning its impact on power-delay products.
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Citations
Cited by
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Pearton, S. J., Ren, F., Tadjer, M., & Kim, J. (2018) · Journal of Applied Physics · doi:10.1063/1.5062841 · Cited by 659
Essential physics of carrier transport in nanoscale MOSFETs
Lundstrom, M., & Ren, Z. (2002) · IEEE Transactions on Electron Devices · doi:10.1109/16.974760 · Cited by 554
Optimal interconnection circuits for VLSI
Bakoglu, H. B., & Meindl, J. D. (1985) · IEEE Transactions on Electron Devices · doi:10.1109/t-ed.1985.22046 · Cited by 435
Quasi-ballistic carbon nanotube array transistors with current density exceeding Si and GaAs
Brady, G. J., Way, A. J., Safron, N. S., Evensen, H. T., Gopalan, P., & Arnold, M. S. (2016) · Science Advances · doi:10.1126/sciadv.1601240 · Cited by 359
Metadata
- Authors
- Solomon, P. M.
- Venue
- Proceedings of the IEEE
- Published
- 1982
- Volume
- 70
- Issue
- 5
- Pages
- 489-509
- ISSN
- 0018-9219 (ISSN-L)
- OpenAlex
- W2025407267
- Cited by
- 191
- References
- 0
- FWCI
- 17.36
- Type
- journal article
- Language
- en
- Open access
- closed
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