The DOI matches its Crossref record; 21 of the 21 references it cites were found in a registry or an index.
Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces
Abstract
Accurate modeling of MOS devices requires quantitative knowledge of carrier mobilities in surface inversion and accumulation layers. Optimization of device structures and accurate circuit simulation, particulary as technologies push toward fundamental limits, necessitate an understanding of how impurity doping levels, oxide charge densities, process techniques, and applied electric fields affect carrier surface mobilities. It is the purpose of this paper to present an extensive set experimental results on the behavior of electron surface mobility in thermally oxidized silicon structures. Empirical equations are developed which allow the calculation of electron mobility under a wide variety of substrate, process, and electrical conditions. The experimental results are interpreted in terms of the dominant physical mechanisms responsible for mobility degradation at the Si/SiO2interface. From the observed effects of process parameters on mobility roll-off under high vertical fields, conclusions are drawn about optimum process conditions for maximizing mobility. The implications of this work for performance limits of several types of MOS devices are described.
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Citations
Cites
Physics and technology of semiconductor devices
Grove, A. S. (1967) · CERN Document Server (European Organization for Nuclear Research) · Cited by 2,802
Properties of Semiconductor Surface Inversion Layers in the Electric Quantum Limit
Stern, F., & Howard, W. E. (1967) · Physical Review · doi:10.1103/physrev.163.816 · Cited by 1,934
The physics of semiconductor devices
Rediker, R. H. (1970) · Solid-State Electronics · doi:10.1016/0038-1101(70)90165-6 · Cited by 1,616
A charge-sheet model of the MOSFET
Brews, J. R. (1978) · Solid-State Electronics · doi:10.1016/0038-1101(78)90264-2 · Cited by 563
Transport Properties of Electrons in Inverted Silicon Surfaces
Fang, F. F., & Fowler, A. B. (1968) · Physical Review · doi:10.1103/physrev.169.619 · Cited by 332
Mobility Anisotropy of Electrons in Inversion Layers on Oxidized Silicon Surfaces
Satô, T., Takeishi, Y., Hara, H., & Okamoto, Y. (1971) · Physical Review B · doi:10.1103/physrevb.4.1950 · Cited by 280
Sah, C. T., Ning, T. H., & Tschopp, L. L. (1972) · Surface Science · doi:10.1016/0039-6028(72)90183-5 · Cited by 264
Hot Electron Effects and Saturation Velocities in Silicon Inversion Layers
Fang, F. F., & Fowler, A. B. (1970) · Journal of Applied Physics · doi:10.1063/1.1659111 · Cited by 230
On the role of scattering by surface roughness in silicon inversion layers
Cheng, Y. C., & Sullivan, E. A. (1973) · Surface Science · doi:10.1016/0039-6028(73)90038-1 · Cited by 164
Electron and hole mobilities in inversion layers on thermally oxidized silicon surfaces
Leistiko, O., Grove, A. S., & Sah, C. T. (1965) · IEEE Transactions on Electron Devices · doi:10.1109/t-ed.1965.15489 · Cited by 161
Cited by
Material Science and Device Physics in SiC Technology for High-Voltage Power Devices
Kimoto, T. (2015) · Japanese Journal of Applied Physics · doi:10.7567/jjap.54.040103 · Cited by 1,176
Chung, G. Y., Tin, C. C., Williams, J. R., McDonald, K., Chanana, R. K., Weller, R. A., Pantelides, S. T., Feldman, L. C., Holland, O. W., Das, M. K., et al. (2001) · IEEE Electron Device Letters · doi:10.1109/55.915604 · Cited by 641
SiC devices: physics and numerical simulation
Ruff, M., Mitlehner, H., & Helbig, R. (1994) · IEEE Transactions on Electron Devices · doi:10.1109/16.293319 · Cited by 508
Rumyantsev, S. L., Shur, M. S., Levinshtein, M. E., Ivanov, P. A., Palmour, J. W., Agarwal, A. K., Hull, B. A., & Ryu, S.-H. (2009) · Semiconductor Science and Technology · doi:10.1088/0268-1242/24/7/075011 · Cited by 66
Metadata
- Authors
- Sun, S. C., & Plummer, J. D.
- Venue
- IEEE Transactions on Electron Devices
- Published
- 1980-08
- Volume
- 27
- Issue
- 8
- Pages
- 1497-1508
- ISSN
- 0018-9383 (ISSN-L)
- 1557-9646
- OpenAlex
- W2144545104
- Cited by
- 687
- References
- 21
- FWCI
- 15.07
- Type
- journal article
- Language
- en
- Open access
- closed
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
