The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.
Ion-sensing devices with silicon nitride and borosilicate glass insulators
Abstract
Ion-sensitive field-effect transistors (ISFET's) with silicon dioxide, silicon nitride, and borosilicate glass as the active gate material were fabricated and tested for pH-sensing applications. The borosilicate glass and silicon nitride devices were found to have a linear potential/pH response and previous theories of ISFET function were inadequate to explain this. A two-site theory is presented that can explain the features of the potential/pH response of both silicon nitride and borosilicate glass ISFETs. The model is easily extended to any two-site system.
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Citations
Cites
Matsuo, T., & Esashi, M. (1981) · Sensors and Actuators · doi:10.1016/0250-6874(81)80006-6 · Cited by 343
The role of buried OH sites in the response mechanism of inorganic-gate pH-sensitive ISFETs
Bousse, L., & Bergveld, P. (1984) · Sensors and Actuators · doi:10.1016/0250-6874(84)80028-1 · Cited by 198
Self-citation
Cited by
Silicon nitride in silicon photonics
Blumenthal, D. J., Heideman, R., Geuzebroek, D., Leinse, A., & Roeloffzen, C. (2018) · Proceedings of the IEEE · doi:10.1109/jproc.2018.2861576 · Cited by 641
Detection of Cell-Affecting Agents with a Silicon Biosensor
Parce, J. W., Owicki, J. C., Kercso, K. M., Sigal, G. B., Wada, H. G., Muir, V. C., Bousse, L. J., Ross, K. L., Sikic, B. I., & McConnell, H. M. (1989) · Science · doi:10.1126/science.2799384 · Cited by 295
Self-citationA physical model for drift in pH ISFETs
Jamasb, S., Collins, S., & Smith, R. L. (1998) · Sensors and Actuators B: Chemical · doi:10.1016/s0925-4005(98)00040-9 · Cited by 239
Interfacial water dielectric-permittivity-profile measurements using atomic force microscopy
Teschke, O., Ceotto, G., & de Souza, E. F. (2001) · Physical Review E · doi:10.1103/physreve.64.011605 · Cited by 209
Metadata
- Authors
- Harame, D. L., Bousse, L. J., Shott, J. D., & Meindl, J. D.
- Venue
- IEEE Transactions on Electron Devices
- Published
- 1987-08
- Volume
- 34
- Issue
- 8
- Pages
- 1700-1707
- ISSN
- 0018-9383 (ISSN-L)
- 1557-9646
- OpenAlex
- W2085477285
- Cited by
- 225
- References
- 2
- FWCI
- 3.37
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Ion-sensing devices with silicon nitride and borosilicate glass insulators. https://app.cochat.ai/papers/10.1109/t-ed.1987.23140
- The paper
- Harame, D. L., Bousse, L. J., Shott, J. D., & Meindl, J. D. (1987). Ion-sensing devices with silicon nitride and borosilicate glass insulators. IEEE Transactions on Electron Devices. https://doi.org/10.1109/t-ed.1987.23140
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
