Student or educator? Sign up with your school email and get 6 months of Pro free.
Cited by 349Analytical Chemistry and SensorsAnalog and Mixed-Signal Circuit DesignSemiconductor materials and devices

The DOI matches its Crossref record; 14 of the 14 references it cites were found in a registry or an index.

Methods of isfet fabrication

Matsuo, Tadayuki, Esashi, Masayosi·1981·Sensors and Actuators

Overview

Integrity signals

Registry

Crossref · 10.1016/0250-6874(81)80006-6

Cites

14 of 14 references verified0 citation errors · 0 not checkable

Statistics

Recomputing p-values needs the paper’s full text.

Verification

Claims the paper makes

We couldn’t retrieve this paper’s full text, so its claims and self-check weren’t run. The registry and citation checks still apply.

Claims other papers make about this one

Each is checked against this paper’s own text: does it say what the citing paper says it does?

Citations

Cites

Show all 14 references

Research works printed but not linked: 4

  1. Abe, 1979, ISFETs using inorganic gate this films, IEEE trans. Electroc Devices, ED-26, 1939, 1944
  2. Tarui, 1969, Si MOS characteristics using vapor grown Al2O3 films, Rep. Electro. Tech. Lab. Jpn., 33, 578
  3. Comte, 1977, Reference ISFET for compensation, Proc. 30th ACEMB, 41-3
  4. Matsuo, 1978, Charasteristics of Parylene Gate ISFET, Extended Abstr. 153rd Meetings, ECS, Vol. 78-1, No. 83, Seattle

Cited by

See all 349

Metadata

Authors
Matsuo, T., & Esashi, M.
Affiliations
Tohoku University (JP)
Venue
Sensors and Actuators
Publisher
Elsevier BV
Published
1981-01
Volume
1
Pages
77-96
ISSN
0250-6874 (ISSN-L)
OpenAlex
W2015173632
Cited by
343
References
14
Citations by year
2026: 1 · 2025: 5 · 2024: 6 · 2023: 2 · 2022: 2 · 2021: 8 · 2020: 4 · 2019: 10 · 2018: 12 · 2017: 10 · 2016: 11 · 2015: 10 · 2014: 10 · 2013: 10 · 2012: 10
FWCI
3.76
Type
journal article
Language
en
Open access
closed
Licence
www.elsevier.com/tdm/userlicense/1.0/ (tdm)
Locations
Sensors and Actuators (publishedVersion)
Topics
  • Physical Sciences › Chemistry › Analytical Chemistry › Analytical Chemistry and Sensors
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Analog and Mixed-Signal Circuit Design
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
Keywords
ion-sensitive field-effect transistor, ion-selective electrodes, IGFET, ion migration, electrolyte solutions, integrated circuit fabrication, biomedical sensors

About these checks

Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.

Statistics and arithmetic are recomputed, not judged.

Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.

What counts as a claim ›How we measure confidence ›How we check this ›

Are you an author, or do you see a problem with this page? Request a review

How to cite

Cite CoChat for the checks on this page, and the paper for its own findings.

This page
CoChat. (2026). Citation check: Methods of isfet fabrication. https://app.cochat.ai/papers/10.1016/0250-6874(81)80006-6
The paper
Matsuo, T., & Esashi, M. (1981). Methods of isfet fabrication. Sensors and Actuators. https://doi.org/10.1016/0250-6874(81)80006-6

Data sources

Bibliographic data: Semantic Scholar, OpenAlex, Crossref.

Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.