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Cited by 838

The DOI matches its Crossref record; 5 of the 5 references it cites were found in a registry or an index.

VTEAM: A General Model for Voltage-Controlled Memristors

Kvatinsky, Shahar, Ramadan, Misbah, Friedman, Eby G., Kolodny, Avinoam·2015·IEEE Transactions on Circuits and Systems II: Express Briefs

Abstract

Memristors are novel electrical devices used for a variety of applications, including memory, logic circuits, and neuromorphic systems. Memristive technologies are attractive due to their nonvolatility, scalability, and compatibility with CMOS. Numerous physical experiments have shown the existence of a threshold voltage in some physical memristors. Additionally, as shown in this brief, some applications require voltage-controlled memristors to operate properly. In this brief, a Voltage ThrEshold Adaptive Memristor (VTEAM) model is proposed to describe the behavior of voltage-controlled memristors. The VTEAM model extends the previously proposed ThrEshold Adaptive Memristor (TEAM) model, which describes current-controlled memristors. The VTEAM model has similar advantages as the TEAM model, i.e., it is simple, general, and flexible, and can characterize different voltage-controlled memristors. The VTEAM model is accurate (below 1.5% in terms of the relative root-mean-square error) and computationally efficient as compared with existing memristor models and experimental results describing different memristive technologies.

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Research works printed but not linked: 18

  1. cassuto, 0, Information-theoretic sneak-path mitigation in memristor crossbar arrays, IEEE Trans Inf Theory
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  5. biolek, 2009, SPICE model of memristor with nonlinear dopant drift, Radioengineering, 18, 210
  6. snyman, 2005, Practical Mathematical Optimization An Introduction to Basic Optimization Theory and Classical and New Gradient-Based Algorithms, 97
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  18. 10.1021/am403497y · DOI

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Metadata

Authors
Kvatinsky, S., Ramadan, M., Friedman, E. G., & Kolodny, A.
Venue
IEEE Transactions on Circuits and Systems II: Express Briefs
Published
2015-08
Volume
62
Issue
8
Pages
786-790
ISSN
  • 1549-7747 (ISSN-L)
  • 1558-3791
OpenAlex
W1578783943
Cited by
838
References
5
FWCI
22.13
Type
journal article
Language
en
Open access
closed
Funders
  • Hasso Plattner Institute
  • Advanced Circuit Research Center of the Technion Israel Institute of Technology
  • Intel Collaborative Research Institute for Computational Intelligence
  • Binational Science Foundation (2012139)
  • Viterbi Fellowship

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Kvatinsky, S., Ramadan, M., Friedman, E. G., & Kolodny, A. (2015). VTEAM: A General Model for Voltage-Controlled Memristors. IEEE Transactions on Circuits and Systems II: Express Briefs. https://doi.org/10.1109/tcsii.2015.2433536

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