The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
GaN-on-Si Power Technology: Devices and Applications
Abstract
In this paper, we present a comprehensive review and discussion of the state-of-the-art device technology and application development of GaN-on-Si power electronics. Several device technologies for realizing normally off operation that is highly desirable for power switching applications are presented. In addition, the examples of circuit applications that can greatly benefit from the superior performance of GaN power devices are demonstrated. Comparison with other competing power device technology, such as Si superjunction-MOSFET and SiC MOSFET, is also presented and analyzed. Critical issues for commercialization of GaN-on-Si power devices are discussed with regard to cost, reliability, and ease of use.
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Citations
Cites
Uemoto, Y., Hikita, M., Ueno, H., Matsuo, H., Ishida, H., Yanagihara, M., Ueda, T., Tanaka, T., & Ueda, D. (2007) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2007.908601 · Cited by 1,038
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Cited by
The 2018 GaN power electronics roadmap
Amano, H., Baines, Y., Beam, E., Borga, M., Bouchet, T., Chalker, P. R., Charles, M., Chen, K. J., Chowdhury, N., Chu, R., et al. (2018) · Journal of Physics D: Applied Physics · doi:10.1088/1361-6463/aaaf9d · Cited by 1,313
Self-citationGaN-based power devices: Physics, reliability, and perspectives
Meneghini, M., De Santi, C., Abid, I., Buffolo, M., Cioni, M., Khadar, R. A., Nela, L., Zagni, N., Chini, A., Medjdoub, F., et al. (2021) · Journal of Applied Physics · doi:10.1063/5.0061354 · Cited by 723
Stability, Reliability, and Robustness of GaN Power Devices: A Review
Kozak, J. P., Zhang, R., Porter, M., Song, Q., Liu, J., Wang, B., Wang, R., Saito, W., & Zhang, Y. (2023) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2023.3266365 · Cited by 441
Hoo Teo, K., Zhang, Y., Chowdhury, N., Rakheja, S., Ma, R., Xie, Q., Yagyu, E., Yamanaka, K., Li, K., & Palacios, T. (2021) · Journal of Applied Physics · doi:10.1063/5.0061555 · Cited by 322
Discussion on Electric Power Supply Systems for All Electric Aircraft
Schefer, H., Fauth, L., Kopp, T. H., Mallwitz, R., Friebe, J., & Kurrat, M. (2020) · IEEE Access · doi:10.1109/access.2020.2991804 · Cited by 217
“trends include the integration of functional blocks (gate driver, sensors, passive components) with power devices in one chip [86] as well as higher blocking voltage devices.”
Background
Metadata
- Authors
- Chen, K. J., Haberlen, O., Lidow, A., Tsai, C. L., Ueda, T., Uemoto, Y., & Wu, Y.
- Venue
- IEEE Transactions on Electron Devices
- Published
- 2017-03
- Volume
- 64
- Issue
- 3
- Pages
- 779-795
- ISSN
- 0018-9383 (ISSN-L)
- 1557-9646
- OpenAlex
- W2593495332
- Cited by
- 1,712
- References
- 1
- FWCI
- 72.61
- Type
- journal article
- Language
- en
- Open access
- closed
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- Chen, K. J., Haberlen, O., Lidow, A., Tsai, C. L., Ueda, T., Uemoto, Y., & Wu, Y. (2017). GaN-on-Si Power Technology: Devices and Applications. IEEE Transactions on Electron Devices. https://doi.org/10.1109/ted.2017.2657579
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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