Zanoni, Enrico

GaN-based power devices: Physics, reliability, and perspectives

Meneghini, M., De Santi, C., Abid, I., Buffolo, M., Cioni, M., Khadar, R. A., Nela, L., Zagni, N., Chini, A., Medjdoub, F., et al. (2021) · Journal of Applied Physics

GaN-based semiconductor devices and materialsSilicon Carbide Semiconductor Technologies

Cited by 723

Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives

Meneghesso, G., Verzellesi, G., Danesin, F., Rampazzo, F., Zanon, F., Tazzoli, A., Meneghini, M., & Zanoni, E. (2008) · IEEE Transactions on Device and Materials Reliability

GaN-based semiconductor devices and materialsSilicon Carbide Semiconductor Technologies

Cited by 675

Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives

Buffolo, M., Favero, D., Marcuzzi, A., De Santi, C., Meneghesso, G., Zanoni, E., & Meneghini, M. (2024) · IEEE Transactions on Electron Devices

Silicon Carbide Semiconductor TechnologiesGaN-based semiconductor devices and materials

Cited by 476

Reliability and failure analysis in power GaN-HEMTs: An overview

Meneghini, M., Rossetto, I., De Santi, C., Rampazzo, F., Tajalli, A., Barbato, A., Ruzzarin, M., Borga, M., Canato, E., Zanoni, E., et al. (2017) · 2017 IEEE International Reliability Physics Symposium (IRPS)

GaN-based semiconductor devices and materialsSilicon Carbide Semiconductor Technologies

Cited by 120

Hot-Electron Effects in AlGaN/GaN HEMTs Under Semi-ON DC Stress

Minetto, A., Deutschmann, B., Modolo, N., Nardo, A., Meneghini, M., Zanoni, E., Sayadi, L., Prechtl, G., Sicre, S., & Haberlen, O. (2020) · IEEE Transactions on Electron Devices

GaN-based semiconductor devices and materialsSilicon Carbide Semiconductor Technologies

Cited by 65

A Physics-Based Approach to Model Hot-Electron Trapping Kinetics in p-GaN HEMTs

Modolo, N., De Santi, C., Minetto, A., Sayadi, L., Sicre, S., Prechtl, G., Meneghesso, G., Zanoni, E., & Meneghini, M. (2021) · IEEE Electron Device Letters

GaN-based semiconductor devices and materialsSilicon Carbide Semiconductor Technologies

Cited by 48

Positive and negative charge trapping GaN HEMTs: Interplay between thermal emission and transport-limited processes

Nardo, A., De Santi, C., Koller, C., Ostermaier, C., Daumiller, I., Meneghesso, G., Zanoni, E., & Meneghini, M. (2021) · Microelectronics Reliability

GaN-based semiconductor devices and materialsSilicon Carbide Semiconductor Technologies

Cited by 32

Non-monotonic threshold voltage variation in 4H-SiC metal–oxide–semiconductor field-effect transistor: Investigation and modeling

Masin, F., De Santi, C., Lettens, J., Franchi, J., Domeij, M., Moens, P., Meneghini, M., Meneghesso, G., & Zanoni, E. (2021) · Journal of Applied Physics

Silicon Carbide Semiconductor TechnologiesSemiconductor materials and devices

Cited by 29

Hot-Electron Trapping and Hole-Induced Detrapping in GaN-Based GITs and HD-GITs

Fabris, E., Meneghini, M., De Santi, C., Borga, M., Kinoshita, Y., Tanaka, K., Ishida, H., Ueda, T., Meneghesso, G., & Zanoni, E. (2019) · IEEE Transactions on Electron Devices

GaN-based semiconductor devices and materialsSilicon Carbide Semiconductor Technologies

Cited by 29

$\mu s$-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate

Canato, E., Masin, F., Borga, M., Zanoni, E., Meneghini, M., Meneghesso, G., Stockman, A., Banerjee, A., & Moens, P. (2019) · 2019 IEEE International Reliability Physics Symposium (IRPS)

GaN-based semiconductor devices and materialsSilicon Carbide Semiconductor Technologies

Cited by 24

Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs

Modolo, N., Fregolent, M., Masin, F., Benato, A., Bettini, A., Buffolo, M., De Santi, C., Borga, M., Posthuma, N., Bakeroot, B., et al. (2022) · Microelectronics Reliability

GaN-based semiconductor devices and materialsSilicon Carbide Semiconductor Technologies

Cited by 16

Impact of Sidewall Etching on the Dynamic Performance of GaN-on-Si E-Mode Transistors

Tajalli, A., Canato, E., Nardo, A., Meneghini, M., Stockman, A., Moens, P., Zanoni, E., & Meneghesso, G. (2019) · 2019 IEEE International Reliability Physics Symposium (IRPS)

GaN-based semiconductor devices and materialsSilicon Carbide Semiconductor Technologies

Cited by 5