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Characterization and Experimental Assessment of the Effects of Parasitic Elements on the MOSFET Switching Performance
Abstract
This paper presents a comprehensive study on the influences of parasitic elements on the MOSFET switching performance. A circuit-level analytical model that takes MOSFET parasitic capacitances and inductances, circuit stray inductances, and reverse current of the freewheeling diode into consideration is given to evaluate the MOSFET switching characteristics. The equations derived for emulating MOSFET switching transients are assessed graphically, which, compared to results obtained merely from simulation or parametric study, can offer better insight into where the changes in switching performance lie when the parasitic elements are varied. The analysis has been successfully substantiated by the experimental results of a 400 V, 6 A test bench. A discussion on the physical meanings behind these parasitic effect phenomena is included. Knowledge about the effects of parasitic elements on the switching behavior serves as an important basis for the design guidelines of fast switching power converters.
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Cited by
Influences of Device and Circuit Mismatches on Paralleling Silicon Carbide MOSFETs
Li, H., Munk-Nielsen, S., Wang, X., Maheshwari, R., Beczkowski, S., Uhrenfeldt, C., & Franke, W.-T. (2016) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2015.2408054 · Cited by 306
Zhao, C., Wang, L., & Zhang, F. (2020) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2019.2954716 · Cited by 146
A Sine-Wave Heating Circuit for Automotive Battery Self-Heating at Subzero Temperatures
Shang, Y., Liu, K., Cui, N., Zhang, Q., & Zhang, C. (2020) · IEEE Transactions on Industrial Informatics · doi:10.1109/tii.2019.2923446 · Cited by 101
Review of Topside Interconnections for Wide Bandgap Power Semiconductor Packaging
Wang, L., Wang, W., Hueting, R. J. E., Rietveld, G., & Ferreira, J. A. (2023) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2022.3200469 · Cited by 73
Xu, Y., Ho, C. N. M., Ghosh, A., & Muthumuni, D. (2021) · IEEE Transactions on Industry Applications · doi:10.1109/tia.2021.3058227 · Cited by 29
Metadata
- Authors
- Wang, J., Chung, H. S.-H., & Li, R. T.-H.
- Venue
- IEEE Transactions on Power Electronics
- Published
- 2013-01
- Volume
- 28
- Issue
- 1
- Pages
- 573-590
- ISSN
- 0885-8993 (ISSN-L)
- 1941-0107
- OpenAlex
- W2003935246
- Cited by
- 551
- References
- 0
- FWCI
- 7.94
- Type
- journal article
- Language
- en
- Open access
- closed
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- Wang, J., Chung, H. S.-H., & Li, R. T.-H. (2013). Characterization and Experimental Assessment of the Effects of Parasitic Elements on the MOSFET Switching Performance. IEEE Transactions on Power Electronics. https://doi.org/10.1109/tpel.2012.2195332
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