Review of Topside Interconnections for Wide Bandgap Power Semiconductor Packaging
Open accessAbstract
Due to their superior material properties, wide bandgap (WBG) semiconductors enable the application of power electronics at higher temperature operation, higher frequencies, and higher efficiencies compared to silicon (Si). However, the commonly-used aluminum wire bonding as topside interconnection technology prevents WBG semiconductors from reaching their full potential, due to inherent parasitic inductances, large size, heat dissipation, and reliability issues of wire bonding technology. Therefore, this article presents a comprehensive review of topside interconnection technologies of WBG semiconductor power devices and modules. First, the challenges and driving factors for the interconnection of WBG semiconductor dies are discussed. Second, for each widely commercially used WBG semiconductor, i.e., silicon carbide and gallium nitride, technical details and innovative features of state-of-the-art interconnection techniques in packages are reviewed. Then, the majority of existing topside interconnection materials for WBG semiconductors are categorized and compared, followed by a discussion of their advantages, challenges, and failure modes. Based on this elaborate discussion, potential future directions of the interconnection technology development are given. It is concluded that the superior performance of WBG semiconductors can be obtained by combining novel materials with innovative designs for the topside interconnections.
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Embedded packaging with substrate-embedded microchannels enables more than 22% higher saturation current due to improved thermal uniformity.
“When combined with substrate-embedded microchannels for localized convective cooling, the junction temperature can drop by approximately 50 ◦ C, enabling more than 22% [27] higher saturation current due to improved thermal uniformity.”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [27]
The Embedded Packaging Technology section (page unavailable) says embedded packaging can enhance thermal performance and permit double-sided cooling. It does not report substrate-embedded microchannels, an approximately 50 °C junction-temperature drop, or a greater-than-22% increase in saturation current due to improved thermal uniformity. (LLM, conf=0.78)
Experimental — accuracy not yet measuredDouble-sided cooling achieves thermal resistance reduction of 20-48% versus single-sided cooling.
“• R th reduction: 20-48% (vs. single-sided) [27,42]”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [27]
The “D. 3-D Interconnection Technology” section reports that Cu-clip double-sided cooling reduces junction-to-case thermal resistance by about 20% versus single-sided cooling in a wire-bonded package. It does not support the claimed 48% upper bound, so the full 20–48% range is not established by this source. (LLM, conf=0.88)
Experimental — accuracy not yet measuredRealizing device-level advantages at the system level requires a multidisciplinary co-design approach that jointly considers device physics, packaging, circuit topologies, gate drivers, EMI filters, and cooling beyond optimizing isolated components.
“Realizing these device-level advantages at the system level, however, requires a multidisciplinary co-design approach that jointly considers device physics, packaging, circuit topologies, gate drivers, EMI filters, and cooling-beyond optimizing isolated components [10-12,27,80,81].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [27]
The discussion of future trends (page unavailable) calls for whole-system integration to improve power density and efficiency in high-frequency applications. The parasitic-inductance section (page unavailable) also discusses circuit design, gate drivers, and EMI filters. But the paper does not explicitly call for the claimed joint co-design of every listed element, including device physics and cooling, rather than optimization of isolated components. (LLM, conf=0.85)
Experimental — accuracy not yet measuredCu-based interconnections such as Cu clips and Cu sintering can cut loop inductance from 14 nH to 2.37 nH versus wire bonding, thereby lowering EMI and switching losses.
“Cu-based interconnections (Cu clips, Cu sintering, etc.) can cut loop inductance from 14 nH to 2.37 nH versus wire bonding, thereby lowering EMI and switching losses [25,27].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [27]
In “D. 3-D Interconnection Technology” (page unavailable), the review says a Cu-clip package reduces inductance by 50% relative to wire bonding; it also reports lower switching loss for a different Cu-pin structure. It does not substantiate the claimed reduction from 14 nH to 2.37 nH, or attribute that reduction and lower EMI to Cu clips and Cu sintering. (LLM, conf=0.88)
Experimental — accuracy not yet measuredCopper-clip structures reduce thermal resistance by approximately 20% versus single-sided layouts.
“Copperclip structures reduce thermal resistance by approximately 20% [27] versus single-sided layouts, while flip-chip bonding further mitigates parasitic inductance.”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [27]
In SiC MOSFET modules, embedded packaging has cut parasitic inductance by up to 87.6%, down to 1.24 nH.
“In SiC MOSFET modules, this approach has cut parasitic inductance by up to 87.6%, down to 1.24 nH [27].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [27]
Conventional wire bonding is often unsuitable for wide-bandgap devices, which switch rapidly.
“Conventional wire bonding is often unsuitable for WBG devices, which switch rapidly [25-27].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [27]
The constraints of conventional wire bonding arise from substantial parasitic inductance, restricted vertical heat removal, and reduced reliability under thermomechanical stress, all of which degrade performance and lifetime.
“The constraints arise from three factors: substantial parasitic inductance, restricted vertical heat removal, and reduced reliability under thermomechanical stress-all of which degrade performance and lifetime [25-27,40].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [27]
Conventional wire bonding is a bottleneck that limits the attainable switching speed and power density of wide-bandgap packages.
“Conventional wire bonding, originally developed for Si devices, is a bottleneck that limits the attainable switching speed and power density of WBG packages.”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [27]
Flip-chip bonding further mitigates parasitic inductance.
“Copperclip structures reduce thermal resistance by approximately 20% [27] versus single-sided layouts, while flip-chip bonding further mitigates parasitic inductance.”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [27]
Simultaneous optimization of electrical performance, thermal behavior, and mechanical integrity is essential.
“Accordingly, simultaneous optimization of electrical performance, thermal behavior, and mechanical integrity is essential [10-12,27,82].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [27]
When combined with substrate-embedded microchannels for localized convective cooling, embedded packaging can drop junction temperature by approximately 50°C.
“When combined with substrate-embedded microchannels for localized convective cooling, the junction temperature can drop by approximately 50 ◦ C, enabling more than 22% [27] higher saturation current due to improved thermal uniformity.”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [27]
The Embedded Packaging Technology section (page unavailable) describes improved thermal performance and a 20% reduction in thermal resistance for a planar Cu interconnection, but does not address substrate-embedded microchannel cooling. Searches for microchannels, a 50°C junction-temperature drop, and saturation current found no passage establishing the claimed result. (LLM, conf=0.74)
Experimental — accuracy not yet measured
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Cites
Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges
Jones, E. A., Wang, F. F., & Costinett, D. (2016) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2016.2582685 · Cited by 1,259 · see citing works
Selected failure mechanisms of modern power modules
Ciappa, M. (2002) · Microelectronics Reliability · doi:10.1016/s0026-2714(02)00042-2 · Cited by 1,039 · see citing works
Fast power cycling test of IGBT modules in traction application
Held, M., Jacob, P., Nicoletti, G. J., Scacco, P., & Poech, M. (2002) · IEEE International Conference on Power Electronics and Drive Systems (PEDS) · doi:10.1109/peds.1997.618742 · Cited by 587 · see citing works
Wang, J., Chung, H. S.-H., & Li, R. T.-H. (2012) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2012.2195332 · Cited by 552 · see citing works
A Review of SiC Power Module Packaging Technologies: Challenges, Advances, and Emerging Issues
Lee, H., Smet, V., & Tummala, R. (2020) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2019.2951801 · Cited by 526 · see citing works
Whitaker, B., Barkley, A., Cole, Z., Passmore, B., Martin, D., McNutt, T. R., Lostetter, A. B., Lee, J. S., & Shiozaki, K. (2013) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2013.2279950 · Cited by 442 · see citing works
A Review of SiC Power Module Packaging: Layout, Material System and Integration
Chen, C. (2017) · CPSS Transactions on Power Electronics and Applications · doi:10.24295/cpsstpea.2017.00017 · Cited by 312 · see citing works
Power Cycling Reliability of Power Module: A Survey
Durand, C., Klingler, M., Coutellier, D., & Naceur, H. (2016) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2016.2516044 · Cited by 239 · see citing works
Factors affecting the high temperature strength of polcyrystalline solids
SHERBY, O. D. (1962) · Acta Metallurgica · doi:10.1016/0001-6160(62)90058-5 · Cited by 213 · see citing works
Automotive Power Module Packaging: Current Status and Future Trends
Yang, Y., Dorn-Gomba, L., Rodriguez, R., Mak, C., & Emadi, A. (2020) · IEEE Access · doi:10.1109/access.2020.3019775 · Cited by 208 · see citing works
State Detection of Bond Wires in IGBT Modules Using Eddy Current Pulsed Thermography
Li, K., Tian, G. Y., Cheng, L., Yin, A., Cao, W., & Crichton, S. O. J. (2014) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2013.2288334 · Cited by 189 · see citing works
Elastic and plastic properties of GaN determined by nano-indentation of bulk crystal
Nowak, R., Pessa, M., Suganuma, M., Leszczyński, M., Grzegory, I., Porowski, S., & YOSHIDA, F. (1999) · Applied Physics Letters · doi:10.1063/1.124919 · Cited by 181 · see citing works
Review of Packaging Schemes for Power Module
Hou, F., Wang, W., Cao, L., Li, J., Su, M., Lin, T., Zhang, G., & Ferreira, J. A. (2019) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2019.2947645 · Cited by 171 · see citing works
Self-citation10-kV SiC MOSFET Power Module With Reduced Common-Mode Noise and Electric Field
DiMarino, C., Mouawad, B., Johnson, C. M., Boroyevich, D., & Burgos, R. P. (2019) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2019.2952633 · Cited by 147 · see citing works
Gallium Nitride based 3D integrated non-isolated point of load module
Reusch, D., Gilham, D. J., Su, Y., & Lee, F. C. (2012) · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · doi:10.1109/apec.2012.6165796 · Cited by 128 · see citing works
Commercial GaN-Based Power Electronic Systems: A Review
Pushpakaran, B. N., Subburaj, A. S., & Bayne, S. B. (2020) · Journal of Electronic Materials · doi:10.1007/s11664-020-08397-z · Cited by 126 · see citing works
Integrated circuit packaging review with an emphasis on 3D packaging
Lancaster, A., & Keswani, M. (2017) · Integration · doi:10.1016/j.vlsi.2017.09.008 · Cited by 113 · see citing works
A Solution to Press-Pack Packaging of SiC MOSFETS
Zhu, N., Mantooth, H. A., Xu, D., Chen, M., & Glover, M. D. (2017) · IEEE Transactions on Industrial Electronics · doi:10.1109/tie.2017.2686365 · Cited by 112 · see citing works
A Novel High-Temperature Planar Package for SiC Multichip Phase-Leg Power Module
Ning, P., Lei, T. G., Wang, F., Lu, G., Ngo, K. D. T., & Rajashekara, K. (2010) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2010.2046498 · Cited by 103 · see citing works
Seal, S., & Mantooth, H. A. (2017) · Energies · doi:10.3390/en10030341 · Cited by 100 · see citing works
SKiN: Double side sintering technology for new packages
Stockmeier, T., Beckedahl, P., Gobl, C., & Malzer, T. (2011) · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · doi:10.1109/ispsd.2011.5890856 · Cited by 97 · see citing works
Innovative and Reliable Power Modules: A Future Trend and Evolution of Technologies
Neeb, C., Boettcher, L., Conrad, M., & Doncker, R. W. D. (2014) · IEEE Industrial Electronics Magazine · doi:10.1109/mie.2014.2304313 · Cited by 97 · see citing works
Sintering of Copper Particles for Die Attach
Kahler, J., Heuck, N., Wagner, A., Stranz, A., Peiner, E., & Waag, A. (2012) · IEEE Transactions on Components Packaging and Manufacturing Technology · doi:10.1109/tcpmt.2012.2201940 · Cited by 90 · see citing works
Wide bandgap semiconductor power devices for energy efficient systems
Chow, T. P. (2015) · IEEE Workshop on Wide Bandgap Power Devices and Applications · doi:10.1109/wipda.2015.7369328 · Cited by 88 · see citing works
Creep properties of low-temperature sintered nano-silver lap shear joints
Li, X., Chen, G., Wang, L., Mei, Y., Chen, X., & Lu, G. (2013) · Materials Science and Engineering A · doi:10.1016/j.msea.2013.05.001 · Cited by 86 · see citing works
Self-citationDeng, E., Zhao, Z., Xin, Q., Zhang, J., & Huang, Y. (2017) · Microelectronics Reliability · doi:10.1016/j.microrel.2017.07.095 · Cited by 84 · see citing works
3-D Wire Bondless Switching Cell Using Flip-Chip-Bonded Silicon Carbide Power Devices
Seal, S., Glover, M. D., & Mantooth, H. A. (2017) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2017.2782226 · Cited by 81 · see citing works
What is the future of bonding wire? Will copper entirely replace gold?
Breach, C. D. (2010) · Gold bulletin · doi:10.1007/bf03214983 · Cited by 76 · see citing works
A New Package of High-Voltage Cascode Gallium Nitride Device for Megahertz Operation
Zhang, W., Huang, X., Liu, Z., Lee, F. C., She, S., Du, W., & Li, Q. (2015) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2015.2418572 · Cited by 73 · see citing works
Properties of Bulk Sintered Silver As a Function of Porosity
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Wereszczak, A. A., Vuono, D. J., Wang, H., Ferber, M. K., & Liang, Z. (2012) · doi:10.2172/1041433 · Cited by 70 · see citing works
Possible failure modes in Press-Pack IGBTs
Tinschert, L., Årdal, A. R., Poller, T., Bohlländer, M., Hernes, M., & Lutz, J. (2015) · Microelectronics Reliability · doi:10.1016/j.microrel.2015.02.019 · Cited by 68 · see citing works
High-Temperature Creep Behavior of Low-Temperature-Sintered Nano-Silver Paste Films
Chen, G., Xiu-hu, S., Nie, P., Mei, Y., Lu, G., & Chen, X. (2012) · Journal of Electronic Materials · doi:10.1007/s11664-012-1903-2 · Cited by 60 · see citing works
Zhang, B., Damian, A., Zijl, J. L. J., van Zeijl, H. W., Zhang, Y., Fan, J., & Zhang, G. (2021) · Journal of Materials Science Materials in Electronics · doi:10.1007/s10854-020-05196-4 · Cited by 57 · see citing works
Burkart, R. M., & Kolar, J. W. (2013) · IEEE ... Workshop on Control and Modeling for Power Electronics · doi:10.1109/compel.2013.6626462 · Cited by 55 · see citing works
Noh, B., Yoon, J., Hong, W.-S., & Jung, S. (2009) · Journal of Electronic Materials · doi:10.1007/s11664-009-0737-z · Cited by 54 · see citing works
High frequency high power density 3D integrated Gallium Nitride based point of load module
Shu, J., Reusch, D., & Lee, F. C. (2012) · IEEE Energy Conversion Congress and Exposition (ECCE) · doi:10.1109/ecce.2012.6342242 · Cited by 52 · see citing works
Fatigue and dwell-fatigue behavior of nano-silver sintered lap-shear joint at elevated temperature
Tan, Y., Li, X., & Li, C. (n.d.) · Gruppo Italiano Frattura Digital Repository (Gruppo Italiano Frattura) · Cited by 48 · see citing works
Solder Joint Reliability—Can Solder Creep?
Hwang, J. S., & Vargas, R. (1990) · Soldering and Surface Mount Technology · doi:10.1108/eb037718 · Cited by 48 · see citing works
Planar Interconnect Technology for Power Module System Integration
Weidner, K., Kaspar, M., & Seliger, N. (2012) · Cited by 48 · see citing works
Ikeda, Y., Iizuka, Y., Hinata, Y., Horio, M., Hori, M., & Takahashi, Y. (2011) · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · doi:10.1109/ispsd.2011.5890843 · Cited by 45 · see citing works
Fan-Out Panel-Level PCB-Embedded SiC Power MOSFETs Packaging
Hou, F., Wang, W., Ma, R., Li, Y., Han, Z., Su, M., Li, J., Yu, Z., Song, Y., Wang, Q., et al. (2019) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2019.2952238 · Cited by 44 · see citing works
Self-citationMedjahed, H., Vidal, P.-É., & Nogarède, B. (2012) · Microelectronics Reliability · doi:10.1016/j.microrel.2012.01.013 · Cited by 41 · see citing works
Review of State-of-the-Art Integration Technologies in Power Electronic Systems
Wang, K. (2017) · CPSS Transactions on Power Electronics and Applications · doi:10.24295/cpsstpea.2017.00027 · Cited by 40 · see citing works
Novel wire bond material for advanced power module packages
Schmidt, R., König, C., & Prenosil, P. (2012) · Microelectronics Reliability · doi:10.1016/j.microrel.2012.06.139 · Cited by 39 · see citing works
Packaging and Reliability of Power Modules
Lutz, J. (2014) · Cited by 39 · see citing works
Commercialization and reliability of 600 V GaN power switches
Kikkawa, T., Hosoda, T., Shono, K., Imanishi, K., Asai, Y., Wu, Y., Shen, L., Smith, K. V., Dunn, D., Chowdhury, S., et al. (2015) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/irps.2015.7112766 · Cited by 37 · see citing works
Uniaxial ratcheting behavior of sintered nanosilver joint for electronic packaging
Chen, G., Yu, L. G., Mei, Y., Li, X., Chen, X., & Lu, G. (2013) · Materials Science and Engineering A · doi:10.1016/j.msea.2013.10.091 · Cited by 37 · see citing works
Conducted EMI analysis and filter design for MHz active clamp flyback front-end converter
Huang, X., Feng, J., Lee, F. C., Li, Q., & Yang, Y. (2016) · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · doi:10.1109/apec.2016.7468071 · Cited by 37 · see citing works
Ultra compact and high reliable SiC MOSFET power module with 200°C operating capability
Horio, M., Iizuka, Y., Ikeda, Y., Mochizuki, E., & Takahashi, Y. (2012) · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · doi:10.1109/ispsd.2012.6229028 · Cited by 35 · see citing works
Choe, C., Chen, C., Nagao, S., & Suganuma, K. (2020) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2020.3024986 · Cited by 35 · see citing works
Haumann, S., Rudzki, J., Osterwald, F., Becker, M., & Eisele, R. (2013) · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · doi:10.1109/apec.2013.6520275 · Cited by 34 · see citing works
Three-phase inverter employing PCB embedded GaN FETs
Savulak, S., Guo, B., & Krishnamurthy, S. (2018) · IEEE Applied Power Electronics Conference and Exposition (APEC) · doi:10.1109/apec.2018.8341177 · Cited by 34 · see citing works
Song, S., Munk‐Nielsen, S., Uhrenfeldt, C., & Trintis, I. (2017) · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · doi:10.1109/apec.2017.7930779 · Cited by 33 · see citing works
Rudzki, J., Becker, M., Eisele, R., Poech, M., & Osterwald, F. (2014) · Fraunhofer-Publica (Fraunhofer-Gesellschaft) · Cited by 33 · see citing works
Increased lifetime of wire bonding connections for IGBT power modules
Hamidi, A. S., Kaufmann, S., & Herr, E. (2002) · doi:10.1109/apec.2001.912494 · Cited by 31 · see citing works
Electrochemical migration of directly printed Ag electrodes using Ag paste with epoxy binder
Noh, B., Yoon, J., Kim, K., Kang, S., & Jung, S. (2012) · Microelectronic Engineering · doi:10.1016/j.mee.2012.08.013 · Cited by 31 · see citing works
Flip-chip bonded silicon carbide MOSFETs as a low parasitic alternative to wire-bonding
Seal, S., Glover, M. D., Wallace, A. K., & Mantooth, H. A. (2016) · IEEE Workshop on Wide Bandgap Power Devices and Applications · doi:10.1109/wipda.2016.7799936 · Cited by 26 · see citing works
Enhanced power cycling performance of IGBT modules with a reinforced emitter contact
Özkol, E., Brem, F., Liu, C., Hartmann, S., & Kopta, A. (2015) · Microelectronics Reliability · doi:10.1016/j.microrel.2015.03.013 · Cited by 25 · see citing works
Kim, N., Yu, J., Zhang, W., Li, R., Wang, M., & Ng, W. T. (2020) · Journal of Electronic Materials · doi:10.1007/s11664-020-08284-7 · Cited by 25 · see citing works
Reliability of Planar SKiN Interconnect Technology
Scheuermann, U. (2012) · Cited by 25 · see citing works
Impact of solder fatigue on module lifetime in power cycling tests
Scheuermann, U., & Schmidt, R. (2011) · Cited by 23 · see citing works
Chang, T., Lee, C., Hsieh, C.-P., Hung, S.-C., & Cheng, R.-S. (2015) · Microelectronics Reliability · doi:10.1016/j.microrel.2015.10.004 · Cited by 22 · see citing works
Properties of Sn‐Ag‐Cu Solder Joints Prepared by Induction Heating
Drienovský, M., Palcut, M., Priputen, P., Cuninková, E., Bošák, O., Kubliha, M., & Trnková, L. R. (2020) · Advances in Materials Science and Engineering · doi:10.1155/2020/1724095 · Cited by 22 · see citing works
Xu, L., Wang, M., Zhou, Y., Qian, Z., & Liu, S. (2016) · IEEE Electronic Components and Technology Conference (ECTC) · doi:10.1109/ectc.2016.172 · Cited by 21 · see citing works
Song, S., Munk‐Nielsen, S., Uhrenfeldt, C., & Pedersen, K. (2017) · IEEE Energy Conversion Congress and Exposition (ECCE) · doi:10.1109/ecce.2017.8096483 · Cited by 21 · see citing works
Enhanced power cycling capability of SiC Schottky diodes using press pack contacts
Banu, V., Godignon, P., Perpiñà, X., Jordà, X., & Millán, J. (2012) · Microelectronics Reliability · doi:10.1016/j.microrel.2012.06.126 · Cited by 20 · see citing works
‘Fuzz Button’ interconnects at microwave and mm-wave frequencies
Carter, D. (2000) · doi:10.1049/ic:20000419 · Cited by 20 · see citing works
A Wire-Bondless Packaging Platform for Silicon Carbide Power Semiconductor Devices
Yin, L., Kapusta, C., Gowda, A. V., & Nagarkar, K. R. (2018) · Journal of Electronic Packaging · doi:10.1115/1.4040499 · Cited by 20 · see citing works
Copper ribbon bonding for power electronics applications
Marenco, N., Kontek, M., Reinert, W. H., Lingner, J., & Poech, M.-H. (2014) · Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft) · Cited by 20 · see citing works
Reliability of paste based transient liquid phase sintered interconnects
Greve, H., Moeini, S. A., & McCluskey, F. P. (2014) · 2022 IEEE 72nd Electronic Components and Technology Conference (ECTC) · doi:10.1109/ectc.2014.6897462 · Cited by 18 · see citing works
Application of the Spark Plasma Sintering Technique to Low-Temperature Copper Bonding
Mouawad, B., Soueidan, M., Fabrègue, D., Buttay, C., Allard, B., Bley, V., Morel, H., & Martín, C. (2012) · IEEE Transactions on Components Packaging and Manufacturing Technology · doi:10.1109/tcpmt.2012.2186453 · Cited by 18 · see citing works
Reliability aspects of copper metallization and interconnect technology for power devices
Hille, F., Roth, R., Schäffer, C., Schulze, H., Heuck, N., Bolowski, D., Guth, K., Ciliox, A., Rott, K., Umbach, F., et al. (2016) · Microelectronics Reliability · doi:10.1016/j.microrel.2016.07.119 · Cited by 18 · see citing works
Montazeri, M., Huitink, D. R., Wallace, A. K., Peng, H., Seal, S., Luo, F. L., & Mantooth, H. A. (2020) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2020.3032886 · Cited by 18 · see citing works
Zhang, Z. (2015) · Cited by 18 · see citing works
Power modules with embedded components
Ostmann, A., Boettcher, L., Manessis, D., Karaszkiewicz, S., & Lang, K. D. (2014) · Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft) · Cited by 18 · see citing works
Reliability of SiC MOSFET with Danfoss Bond Buffer Technology in Automotive Traction Power Modules
Streibel, A., Becker, M., Mühlfeld, O., Hull, B., Sabri, S., Lichtenwalner, D. J., & Casady, J. B. (2019) · Cited by 18 · see citing works
Accelerated test for reliability analysis of SiC diodes
Banu, V., Jordà, X., Montserrat, J., Godignon, P., Millan, J., & Brosselard, P. (2009) · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · doi:10.1109/ispsd.2009.5158053 · Cited by 17 · see citing works
Heterogeneous Integration: A Promising Technology to Future Integrated Power Conversion Electronics
Meng, F., Wang, C., Liu, Z., Ma, K., Disney, D., & Yeo, K. S. (2021) · IEEE Power Electronics Magazine · doi:10.1109/mpel.2021.3099519 · Cited by 17 · see citing works
Silver Sintering and Soldering: Bonding Process and Comparison
Chen, S., & Zhang, H. (2019) · Springer eBooks · doi:10.1007/978-3-319-99256-3_1 · Cited by 16 · see citing works
SUHIR, E. (2019) · Journal of Thermal Stresses · doi:10.1080/01495739.2018.1525331 · Cited by 16 · see citing works
A 3-D stacked wire bondless silicon carbide power module
Dutta, A., & Ang, S. S. (2016) · IEEE Workshop on Wide Bandgap Power Devices and Applications · doi:10.1109/wipda.2016.7799902 · Cited by 15 · see citing works
Plotog, I., Vărzaru, G., Mihăilescu, B., Brânzei, M., Bibiș, A., & Cristea, I. (2013) · IEEE International Symposium for Design and Technology in Electronic Packaging (SIITME) · doi:10.1109/siitme.2013.6743691 · Cited by 15 · see citing works
Application Engineering of Wide Bandgap Semiconductors
Sarlioglu, B., Han, D., Noppakunkajorn, J., & Ogale, A. (2013) · ECS Transactions · doi:10.1149/05804.0399ecst · Cited by 15 · see citing works
Koch, D., Sharma, A. B., Weimer, J., Weiser, M. C. J., Huesgen, T., & Kallfass, I. (2021) · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · doi:10.23919/ispsd50666.2021.9452241 · Cited by 14 · see citing works
Assembly and packaging technologies for high-temperature and high-power GaN HEMTs
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Reliability Criteria for Thick Bonding Wire
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System Integration of GaN Converters ¿ Paradigm Shift ¿ Challenges and Opportunities
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Self-citationZeiser, R., Wagner, P., & Wilde, J. (2012) · Electronic System-Integration Technology Conference (ESTC) · doi:10.1109/estc.2012.6542125 · Cited by 12 · see citing works
Improvement of GaN transistors working conditions to increase efficiency Of A 100W DC-DC converter
Delaine, J., Jeannin, P., Frey, D., & Guépratte, K. (2013) · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · doi:10.1109/apec.2013.6520280 · Cited by 12 · see citing works
Suganuma, K. (2018) · Elsevier eBooks · doi:10.1016/b978-0-08-102094-4.00002-5 · Cited by 12 · see citing works
Prospects of GaN devices in automotive electrification
Araujo, S., Kazanbaş, M. C., Wendt, M., Kleeb, T., & Zacharias, P. (2014) · Cited by 12 · see citing works
Uhlemann, A., Weidner, K., Mitić, G., & Stegmeier, S. (2016) · Cited by 11 · see citing works
Design and evaluation of press-pack SiC MOSFET
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Power module platform for automotive reliability requirements
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Lorenz, L., Erlbacher, T., & Hilt, O. (2018) · Elsevier eBooks · doi:10.1016/b978-0-08-102094-4.00011-6 · Cited by 9 · see citing works
Laser bonding of copper ribbons and clips on SiC power MOSFETs with sintered copper bond buffers
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History and Recent Developments of Packaging Technology for SiC Power Devices
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Behrens, T. (2013) · European Conference on Power Electronics and Applications · doi:10.1109/epe.2013.6634478 · Cited by 7 · see citing works
Comparison of topside contact layouts for power dies embedded in PCB
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Embedding of Power Electronic Components
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Packages for Fast Switching HV GaN Power Devices
Klein, K., Hoene, E., & Klaus-Dieter, L. (2014) · Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft) · Cited by 6 · see citing works
Highly integrated power electronic converters using active devices embedded in printed-circuit board
Yu, C., Buttay, C., Labouré, É., Bley, V., & Combettes, C. (2015) · HAL · Cited by 6 · see citing works
Reliable Interconnection Technologies for High-Temperature Operation of SiC MOSFETs
Mohn, F., Liu, C., & Schuderer, J. (2017) · Cited by 5 · see citing works
Reliability of Ag-Sintering and Sn-Ag TLP-Bonding for Mounting of SiC and GaN Devices
Bajwa, A. A., & Wilde, J. (2016) · FreiDok plus (Universitätsbibliothek Freiburg) · Cited by 5 · see citing works
Effects of Dielectric Material, Aspect Ratio and Copper Plating on Microvia Reliability
Lesniewski, T. K., & Northrop Grumman Corp. (2013) · Cited by 5 · see citing works
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Reiner, R. S., Waltereit, P., Benkhelifa, F., Walcher, H., Quay, R., Schlechtweg, M., & Ambacher, O. (2014) · Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft) · Cited by 4 · see citing works
Performance Comparison Between Surface-mount and Embedded Power Modules
Weis, G. (2019) · Additional Conferences (Device Packaging HiTEC HiTEN & CICMT) · doi:10.4071/2380-4491-2019-dpc-presentation_tp3_052 · Cited by 2 · see citing works
Embedding of Active and Passive Devices by Using an Embedded Interposer
Gottwald, T., Roessle, C., & Neumann, A. (2019) · doi:10.1002/9781119313991.ch9 · Cited by 2 · see citing works
Yao, R., Iannuzzo, F., Bahman, A. S., & Li, H. (2020) · European Conference on Power Electronics and Applications · doi:10.23919/epe20ecceeurope43536.2020.9215875 · Cited by 2 · see citing works
(2004) · CRC Press eBooks · doi:10.1201/9780203507308.ch3 · Cited by 2 · see citing works
Tang, G., Chai, T. C., & Zhang, X. (2018) · 2022 IEEE 72nd Electronic Components and Technology Conference (ECTC) · doi:10.1109/ectc.2018.00293 · Cited by 1 · see citing works
Flagged first, then by citations
4 of the 115 references couldn’t be matched to a known paper.
Research works printed but not linked: 12
- [10]10. M. Hutter, C. Weber, C. Ehrhardt, and K. Lang, "Comparison of different technologies for the die attach of power semiconductor devices conduct- ing active power cycling," in Proc. 9th Int. Conf. Integr. Power Electron. Syst., 2016, pp. 1-7.
- [11]11. S. Duch, T. Krebs, and W. Schmitt, "Comparison of thermal measurement methods and determination of thermal resistance of die attach materials used in power electronic modules," in Proc. 9th Int. Conf. Integr. Power Electron. Syst., 2016, pp. 1-6.
- [46]46. K. Guth et al., "New assembly and interconnects beyond sintering meth- ods," in Proc. Int. Exhib. Conf. Power Electron., Intell. Motion, Renew. Energy, Energy Manage., 2010, pp. 232-237.
- [55]55. M. Becker et al., "FEM based enhancement of system lifetime by im- provement of the die top connection of power electronic semiconductors," in Proc. 10th Int. Conf. Integr. Power Electron. Syst., 2018, pp. 1-4.
- [59]59. S. Behrendt et al., "Feasibility of copper-based ribbon bonding as an assembly method for advanced power modules," in Proc. Int. Exhib. Conf. Power Electron., Intell. Motion, Renew. Energy, Energy Manage., 2018, pp. 1-8.
- [63]63. S. Eicher et al., "4.5 kV press pack IGBT designed for ruggedness and reliability," in Proc. IEEE 39th IAS Annu. Meeting Ind. Appl. Conf., 2004, pp. 1534-1539.
- [71]71. T. Ueda, N. Yoshimatsu, N. Kimoto, D. Nakajima, M. Kikuchi, and T. Shinohara, "Simple, compact, robust and high-performance power module T-PM (transfer-molded power module)," in Proc. 22nd Int. Symp. Power Semicond. Devices IC's, 2010, pp. 47-50.
- [72]72. T. Nishimura, K. Mimura, K. Yamamoto, S. Idaka, and T. Shinohara, "High heat dissipation and high heat durability technologies for transfer- molded power modules with insulating sheets," in Proc. 9th Int. Conf. Integr. Power Electron. Syst., 2016, pp. 1-5.
- [77]77. P. Beckedahl, S. Buetow, A. Maul, M. Roeblitz, and M. Spang, "400 A, 1200 V SiC power module with 1nH commutation inductance," in Proc. 9th Int. Conf. Integr. Power Electron. Syst., 2016, pp. 1-6.
- [80]80. M. Horio, Y. Iizuka, and Y. Ikeda, "Packaging technologies for SiC power modules," Fuji Elect. Rev., vol. 58, no. 2, pp. 75-78, 2012.
- [118]118. W. Zhang et al., "A new package of high-voltage cascode gallium nitride device for megahertz operation," IEEE Trans. Power Electron., vol. 31, no. 2, pp. 1344-1353, Feb. 2016.
- [121]121. W. W. Sheng and R. P. Colino, "Materials," in Power Electronic Modules: Design and Manufacture, 1st ed. Boca Raton, FL, USA, CRC Press, 2004.
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Liu, Y., Yan, H., Yang, D., Li, W., Liu, C., & Zhang, Y. (2023) · International Conference on Electronic Packaging Technology (ICEPT) · doi:10.1109/icept59018.2023.10492257 · Cited by 1 · see citing works
Effects of die top system and trenches on large thin die mechanical robustness
Gupta, N., Poelma, R. H., Zhang, G., van Driel, W. D., & van Zeijl, H. W. (2024) · Journal of Micromechanics and Microengineering · doi:10.1088/1361-6439/ad76b4 · Cited by 1 · see citing works
Ockel, M., Sippel, M., Hecht, C., Janisch, L., & Franke, J. E. (2023) · IEEE Electronics Packaging Technology Conference (EPTC) · doi:10.1109/eptc59621.2023.10457786
Liu, S., Chen, M., Zhu, N., Xiang, Z., & Zhang, S. (2024) · Mechanisms and machine science · doi:10.1007/978-981-97-0922-9_99
Li, Z., Tang, Q., Luo, B., & Ma, X. (2025) · International Conference on Electronic Packaging Technology (ICEPT) · doi:10.1109/icept67137.2025.11157209
Copper-Epoxy Interface Engineering for High-Frequency Chip-to-Chip Interconnects
Park, J. M., Agbadan, I. K., Dauda, M. O., Bello, M., Hendershot, J. C., Tasnim, S., Oduyebo, O. E., Park, S., Engler, A. C., Williamson, J. M., et al. (2025) · ECS Journal of Solid State Science and Technology · doi:10.1149/2162-8777/ae170a · Cited by 1 · see citing works
Evaluation of a New Power GaN Package Using a Flip Chip Bonding Process
Lee, C.-K., Ke, T.-Y., Lin, C., Yeh, Y.-C., Chang, S.-Y., Hsieh, C.-J., Wu, Y., Ko, H.-K., Huang, Y., Lin, H.-H., et al. (2025) · International Microsystems, Packaging, Assembly and Circuits Technology Conference · doi:10.1109/impact67645.2025.11281727
An Unfolder-Based Three-Phase AC–AC Converter
Liu, Z., Sun, Y., li, H., Xiang, H., Li, X., & Su, M. (2026) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2026.3658038
Seong, J., Choi, A. Y., Jeon, J., Lim, J., & Yoon, S. W. (2026) · IEEE Access · doi:10.1109/access.2026.3658650
Park, H., Oh, E.-G., You, M. S., Kim, J., & Kim, J. H. (2026) · SSRN Electronic Journal · doi:10.2139/ssrn.6553208
Characterizations of a Double-Sided Multichip SiC Power Module With Interleaved Layouts
Pei, Y., Zhu, G., Wang, L., Wenbin, D., Li, L., & Mei, Y.-H. (2026) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2026.3685270
Self-citationLee, C.-K., Ke, T.-Y., Lin, C., Yeh, Y.-C., Chang, S.-Y., Hsieh, C.-J., Wu, Y.-L., Ko, H.-K., Huang, Y., Lin, H.-H., et al. (2026) · International Conference on Electronics Packaging (ICEP) · doi:10.23919/icep-hbs69241.2026.11550489
Zulkifli, M. N. (2026) · Microelectronics International · doi:10.1108/mi-02-2026-0046
Chang, J., Chen, L., Meng, B., Lin, H., Gao, W., Sun, M., Li, X., & Ai, C. (2026) · SSRN Electronic Journal · doi:10.2139/ssrn.6964497
Zhang, M., Li, H., Chen, P., Zhao, S., Yang, Z., Wang, H. P., Wang, D., & Ding, L. (2026) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2026.3706802
Design and Optimization of a 1000 V Three-Level ANPC Power Module Utilizing Discrete SiC MOSFETs
Wang, Y., Le, T.-V., Dang, D.-M., Wang, C., & Li, M. (2026) · IEEE Transportation Electrification Conference and Expo · doi:10.1109/iteceats66641.2026.11592969
Chen, Z., Sun, L., Qi, Z., Tang, X.-Y., Song, Q., & Zhang, Y. (2026) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2026.3718052
Shrimali, D., Trivedi, T., Patel, S. K., & Baz, A. (2026) · Ain Shams Engineering Journal · doi:10.1016/j.asej.2026.104397
Choi, W. L., Kim, H. J., & Lee, J. (2026) · Journal of Welding and Joining · doi:10.5781/jwj.2026.44.4.2
Zhang, X., Li, J., Qiu, X., & Wei, S. (2026) · International Conference on Electronic Packaging Technology (ICEPT) · doi:10.1109/icept71373.2026.11690155
Design and Performance Evaluation of a Cu-Clip-Interconnected Half-Bridge SiC Power Module
Meng, Y., Yan, H., Liu, C., & Li, W. (2026) · International Conference on Electronic Packaging Technology (ICEPT) · doi:10.1109/icept71373.2026.11690012
Liquid‐Metal Interconnects: Proof‐of‐Concept for Repairable and Recyclable SiC MOSFET Chips
Baker, N., Bęczkowski, S., Iannuzzo, F., Jørgensen, A., Pedersen, K., Zhang, K., Meyer, S., & Haque, T. (2026) · IET Power Electronics · doi:10.1049/pel2.70323
Hygrothermal delamination assessment of EMC/Cu interfaces in molded power modules
Ma, L., & Wang, J. (2026) · Microelectronics Reliability · doi:10.1016/j.microrel.2026.116331
- Authors
- Wang, L., Wang, W., Hueting, R. J. E., Rietveld, G., & Ferreira, J. A.
- Affiliations
- Guangdong Greater Bay Area Institute of Integrated Circuit and System (CN)
- Yongjiang Laboratory (CN)
- University of Twente (NL)
- VSL National Metrology Institute (NL)
- Venue
- IEEE Transactions on Power Electronics
- Published
- 2023-01
- Volume
- 38
- Issue
- 1
- Pages
- 472-490
- ISSN
- 0885-8993 (ISSN-L)
- 1941-0107
- OpenAlex
- W4292983478
- Cited by
- 73
- References
- 115
- Citations by year
- 2026: 18 · 2025: 27 · 2024: 18 · 2023: 10
- FWCI
- 3.77
- Type
- journal article
- Language
- en
- Open access
- green
- research.utwente.nl
- Licence
- Locations
- IEEE Transactions on Power Electronics (publishedVersion)
- University of Twente Research Information (acceptedVersion, other-oa)
- University of Twente Research Information (submittedVersion, other-oa)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Electronic Packaging and Soldering Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › 3D IC and TSV technologies
- Keywords
- wide bandgap semiconductors, power semiconductor packaging, silicon carbide, gallium nitride, aluminum wire bonding, parasitic inductance, interconnection materials, power modules, high-temperature power electronics
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