The DOI matches its Crossref record; 8 of the 8 references it cites were found in a registry or an index.
Active Gate Driver for Crosstalk Suppression of SiC Devices in a Phase-Leg Configuration
Abstract
In a phase-leg configuration, the high-switching-speed performance of silicon carbide (SiC) devices is limited by the interaction between the upper and lower devices during the switching transient (crosstalk), leading to additional switching losses and overstress of the power devices. To utilize the full potential of fast SiC devices, this paper proposes two gate assist circuits to actively suppress crosstalk on the basis of the intrinsic properties of SiC power devices. One gate assist circuit employs an auxiliary transistor in series with a capacitor to mitigate crosstalk by gate loop impedance reduction. The other gate assist circuit consists of two auxiliary transistors with a diode to actively control the gate voltage for crosstalk elimination. Based on CREE CMF20120D SiC MOSFETs, the experimental results show that both active gate drivers are effective to suppress crosstalk, enabling turn-on switching losses reduction by up to 17%, and negative spurious gate voltage minimization without the penalty of decreasing the switching speed. Furthermore, both gate assist circuits, even without a negative isolated power supply, are more effective in improving the switching behavior of SiC devices in comparison to the conventional gate driver with a -2 V turn-off gate voltage. Accordingly, the proposed active gate assist circuits are simple, efficient, and cost-effective solutions for crosstalk suppression.
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Citations
Cites
Improving SiC JFET Switching Behavior Under Influence of Circuit Parasitics
Josifovic, I., Popovic-Gerber, J., & Ferreira, J. A. (2012) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2012.2185951 · Cited by 220
Development of a SiC JFET-Based Six-Pack Power Module for a Fully Integrated Inverter
Xu, F., Han, T. J., Jiang, D., Tolbert, L. M., Wang, F. “., Nagashima, J. M., Kim, S. J., Kulkarni, S., & Barlow, F. (2012) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2012.2205946 · Cited by 144
Self-citationAnalysis of the switching speed limitation of wide band-gap devices in a phase-leg configuration
Zhang, Z., Zhang, W., Wang, F., Tolbert, L. M., & Blalock, B. J. (2012) · IEEE Energy Conversion Congress and Exposition (ECCE) · doi:10.1109/ecce.2012.6342164 · Cited by 135
Self-citationCharacterization of $Cdv/dt$ Induced Power Loss in Synchronous Buck DC–DC Converters
Zhao, Q., & Stojcic, G. (2007) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2007.900527 · Cited by 106
Effect and utilization of common source inductance in synchronous rectification
Yang, B., & Zhang, J. (2005) · IEEE Applied Power Electronics Conference and Exposition (APEC) · doi:10.1109/apec.2005.1453213 · Cited by 90
Evaluation and comparison of silicon and gallium nitride power transistors in LLC resonant converter
Zhang, W., Long, Y., Zhang, Z., Wang, F., Tolbert, L. M., Blalock, B. J., Henning, S., Wilson, C., & Dean, R. N. (2012) · IEEE Energy Conversion Congress and Exposition (ECCE) · doi:10.1109/ecce.2012.6342657 · Cited by 73
Self-citationNovel AC-Coupled Gate Driver for Ultrafast Switching of Normally Off SiC JFETs
Wrzecionko, B., Bortis, D., Biela, J., & Kolar, J. W. (2012) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2011.2182209 · Cited by 67
High-Temperature SiC Power Module Electrical Evaluation Procedure
Ning, P., Wang, F., & Ngo, K. D. T. (2011) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2011.2151879 · Cited by 50
Self-citation
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Wide Bandgap Devices in AC Electric Drives: Opportunities and Challenges
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A Survey of EMI Research in Power Electronics Systems With Wide-Bandgap Semiconductor Devices
Zhang, B., & Wang, S. (2020) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2019.2953730 · Cited by 367
A Review of High-Speed GaN Power Modules: State of the Art, Challenges, and Solutions
Emon, A. I., Mustafeez-ul-Hassan, Mirza, A. B., Kaplun, J., Vala, S. S., & Luo, F. (2023) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2022.3232265 · Cited by 151
Advances in Power Conversion and Drives for Shipboard Systems
Wang, F., Zhang, Z., Ericsen, T., Raju, R., Burgos, R., & Boroyevich, D. (2015) · Proceedings of the IEEE · doi:10.1109/jproc.2015.2495331 · Cited by 135
Self-citationEvaluation of Aging's Effect on Temperature-Sensitive Electrical Parameters in SiC mosfets
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Metadata
- Authors
- Zhang, Z., Wang, F., Tolbert, L. M., & Blalock, B. J.
- Venue
- IEEE Transactions on Power Electronics
- Published
- 2014-04
- Volume
- 29
- Issue
- 4
- Pages
- 1986-1997
- ISSN
- 0885-8993 (ISSN-L)
- 1941-0107
- OpenAlex
- W1978174941
- Cited by
- 278
- References
- 8
- FWCI
- 7.59
- Type
- journal article
- Language
- en
- Open access
- closed
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- Zhang, Z., Wang, F., Tolbert, L. M., & Blalock, B. J. (2014). Active Gate Driver for Crosstalk Suppression of SiC Devices in a Phase-Leg Configuration. IEEE Transactions on Power Electronics. https://doi.org/10.1109/tpel.2013.2268058
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