Cited by 36Physical Unclonable Functions (PUFs) and Hardware SecurityLow-power high-performance VLSI designAnalog and Mixed-Signal Circuit Design

An All-Digital True-Random-Number Generator with Integrated De-correlation and Bias Correction at 3.2-to-86 MB/S, 2.58 PJ/Bit in 65-NM CMOS

Pamula, V. Rajesh, Sun, Xun, Kim, Sung, Rahman, Fahim ur, Zhang, Baosen, Sathe, Visvesh S.·2018·2018 IEEE Symposium on VLSI Circuits

Abstract

We present a robust, all-digital True Random Number Generator (TRNG) architecture that efficiently combines low-quality physical random number generators (PRNGs) with integrated de-correlation and de-biasing. A 65-nm CMOS TRNG test chip demonstrates NIST test-suite compliance across 0.5-1.0 V supply voltage $(V_{\text{dd}})$ and −20-100 °C, even with significant PRNG entropy $(H)$ degradation. The measured 2.58 pJ/bit is the lowest among all-digital NIST-compliant TRNGs. In terms of energy, area and performance metrics, this digital implementation is especially suited for advanced CMOS process nodes.

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Crossref · 10.1109/vlsic.2018.8502375

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Authors
Pamula, V. R., Sun, X., Kim, S., Rahman, F. U., Zhang, B., & Sathe, V. S.
Affiliations
University of Washington (US)
Venue
2018 IEEE Symposium on VLSI Circuits
Publisher
IEEE
Published
2018-06
Pages
1-2
ISSN
2166-9600 (ISSN-L)
OpenAlex
W2898748682
Cited by
36
References
3
Citations by year
2026: 2 · 2025: 2 · 2024: 7 · 2023: 5 · 2022: 3 · 2021: 6 · 2020: 6 · 2019: 4 · 2018: 1
FWCI
3.66
Type
conference paper
Language
en
Open access
closed
Locations
Symposium on VLSI Circuits (publishedVersion)
Topics
  • Physical Sciences › Computer Science › Hardware and Architecture › Physical Unclonable Functions (PUFs) and Hardware Security
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Low-power high-performance VLSI design
  • Physical Sciences › Engineering › Biomedical Engineering › Analog and Mixed-Signal Circuit Design
Keywords
true random number generator, physical random number generators, bias correction, energy efficiency, 65 nm CMOS, low-voltage operation, low-temperature operation

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