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Ferroelectricity in HfO2 enables nonvolatile data storage in 28 nm HKMG
Abstract
We report on the most aggressively scaled ferroelectric field effect transistor so far. These were successfully fabricated using ferroelectric Si:HfO2in a 28 nm HKMG stack (TiN/Si:HfO2/SiO2/Si). For a ± 5 V program/erase operation with pulses as short as 20 ns, reliable threshold voltage shifts were observed resulting in a memory window of about 0.9 V. We further demonstrate endurance characteristics matching demands of current nonvolatile memories utilizing wear leveling. Low retention loss was observed and extrapolated 10-year data storage can be expected.
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Cited by
Physical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric Capacitors
Pešić, M., Fengler, F. P. G., Larcher, L., Padovani, A., Schenk, T., Grimley, E. D., Sang, X., LeBeau, J. M., Slesazeck, S., Schroeder, U., et al. (2016) · Advanced Functional Materials · doi:10.1002/adfm.201600590 · Cited by 964
Self-citationThe fundamentals and applications of ferroelectric HfO2
Schroeder, U., Park, M. H., Mikolajick, T., & Hwang, C. S. (2022) · Nature Reviews Materials · doi:10.1038/s41578-022-00431-2 · Cited by 710
Self-citationReview and perspective on ferroelectric HfO2-based thin films for memory applications
Park, M. H., Lee, Y. H., Mikolajick, T., Schroeder, U., & Hwang, C. S. (2018) · MRS Communications · doi:10.1557/mrc.2018.175 · Cited by 579
Self-citationFerroelectric ternary content-addressable memory for one-shot learning
Ni, K., Yin, X., Laguna, A. F., Joshi, S., Dünkel, S., Trentzsch, M., Müller, J., Beyer, S., Niemier, M., Hu, X. S., et al. (2019) · Nature Electronics · doi:10.1038/s41928-019-0321-3 · Cited by 382
Self-citationCharge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories
Yurchuk, E., Muller, J., Muller, S., Paul, J., Pesic, M., van Bentum, R., Schroeder, U., & Mikolajick, T. (2016) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2016.2588439 · Cited by 369
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Metadata
- Authors
- Muller, J., Yurchuk, E., Schlosser, T., Paul, J., Hoffmann, R., Muller, S., Martin, D., Slesazeck, S., Polakowski, P., Sundqvist, J., Czernohorsky, M., Seidel, K., Kucher, P., Boschke, R., Trentzsch, M., Gebauer, K., Schroder, U., & Mikolajick, T.
- Venue
- 2012 Symposium on VLSI Technology (VLSIT)
- Publisher
- IEEE
- Published
- 2012-06
- Pages
- 25-26
- OpenAlex
- W1983604260
- Cited by
- 288
- References
- 0
- FWCI
- 8.60
- Type
- conference paper
- Language
- en
- Open access
- closed
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- Muller, J., Yurchuk, E., Schlosser, T., Paul, J., Hoffmann, R., Muller, S., Martin, D., Slesazeck, S., Polakowski, P., Sundqvist, J., Czernohorsky, M., Seidel, K., Kucher, P., Boschke, R., Trentzsch, M., Gebauer, K., Schroder, U., & Mikolajick, T. (2012). Ferroelectricity in HfO2 enables nonvolatile data storage in 28 nm HKMG. 2012 Symposium on VLSI Technology (VLSIT). https://doi.org/10.1109/vlsit.2012.6242443
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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