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Cited by 6

The DOI matches its Crossref record.

Static Current Unbalance of Paralleled SiC MOSFET Modules in the Final Layout

Jauregi, Ander, Garrido, David, Baraia-Etxaburu, Igor, Garcia-Bediaga, Asier, Rujas, Alejandro·2020·2020 IEEE Vehicle Power and Propulsion Conference (VPPC)
DOI 10.1109/vppc49601.2020.9330969
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Abstract

Silicon Carbide (SiC) MOSFETs enable enhanced performance of power converters in several applications. Parallel connection of SiC MOSFETs become mandatory for medium power applications due to the current rate of existing modules. A balanced current sharing between paralleled MOSFETs is desired to maximize the power capability of each device, maximizing the power capability of the whole system. This work studies the static current unbalance of two paralleled 1200V-400A SiC MOSFET modules with individual gate driver. Experimental measurements are done focused on parasitic inductance caused by electromechanical layout.

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Research works printed but not linked: 16

  1. 10.1109/ECCE.2013.6646891 · DOI
  2. thalheim, 2003, Control strategies for balancing of series and parallel connected IGBT-diode modules
  3. niklas hofstötter, 2017, IGBT Modules in Parallel Operation with Central and Individual Driver Board, SemiKron Technical Report
  4. integrations, 0, 2SC0435T2H0-17 and 2SC0435T2H0C-17 Preliminary Datasheet Dual-Channel SCALE^{TM}-2+ IGBT and MOSFET Driver Core, Tech Rep
  5. 10.1109/TPEL.2013.2268058 · DOI
  6. 2013, Application Note 5SYA 2098-00. Paralleling of IGBT modules, Tech Rep
  7. 2019, BSM400D12P3G002: SiC Power Module Datasheet, Tech Rep
  8. 0, CAS300M17BM2 (Datasheet), Tech Rep
  9. electric, 0, FMF800DX2-24A (Datasheet), Tech Rep
  10. 10.1109/TPEL.2019.2954716 · DOI · Paper page
  11. 10.1109/TIE.2019.2901655 · DOI · Paper page
  12. 10.1109/TPEL.2015.2408054 · DOI · Paper page
  13. 2014, AN4381 Application note Current sharing in parallel diodes, Tech Rep
  14. sakaguchi, 2017, Characterization of 3.3 kv and 6.5 kv sic mosfets, PCIM Europe 2017 International Exhibition and Conference for Power Electronics Intelligent Motion Renewable Energy and Energy Management, 1
  15. 10.1109/TIE.2010.2072896 · DOI
  16. mao, 2017, Passive Balancing of Switching Transients between Paralleled SiC MOSFETs

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Metadata

Authors
Jauregi, A., Garrido, D., Baraia-Etxaburu, I., Garcia-Bediaga, A., & Rujas, A.
Venue
2020 IEEE Vehicle Power and Propulsion Conference (VPPC)
Publisher
IEEE
Published
2020-11
Pages
1-5
DOI
10.1109/vppc49601.2020.9330969
Cited by
6
References
0
Licence

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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.

Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.