A step-and-repeat x-ray exposure system for 0.5 μm pattern replication
Abstract
A new step-and-repeat x-ray exposure system has been developed to establish practical submicron x-ray lithography. Penumbra and run-out error have been determined on the basis of resolution consideration and alignment accuracy analysis. The fundamental system parameters have been derived for constructing an efficient and accurate exposure system. To realize such a system, certain new technologies have been developed. (1) A high power Si–Kα x-ray source brings a large x-ray flux onto the wafer through a silicon nitride mask membrane. (2) The optical mark and gap detection method is connected to a precise alignment mechanism placed on an x–y table designed for wafer stepping. (3) This construction ensures atmospheric environment exposure. (4) The exposure system operation is fully automatic thanks to microprocessors. A 0.5 μm pattern has been accurately replicated, and a ±0.15 μm alignment accuracy has been achieved using this exposure system.
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- Authors
- Hayasaka, T., Ishihara, S., Kinoshita, H., & Takeuchi, N.
- Affiliations
- NTT (Japan) (JP)
- Venue
- Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
- Publisher
- American Vacuum Society
- Published
- 1985-11-01
- Volume
- 3
- Issue
- 6
- Pages
- 1581-1586
- ISSN
- 0734-211X (ISSN-L)
- 2327-9877
- OpenAlex
- W2043991015
- Cited by
- 15
- References
- 0
- Citations by year
- 2025: 1 · 2024: 1 · 2023: 1 · 2012: 1
- FWCI
- 1.08
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Photolithography Techniques
- Physical Sciences › Physics and Astronomy › Radiation › Advanced X-ray Imaging Techniques
- Physical Sciences › Physics and Astronomy › Radiation › X-ray Spectroscopy and Fluorescence Analysis
- Keywords
- X-ray lithography, penumbra, alignment accuracy, atmospheric exposure
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