History of extreme ultraviolet lithography
Abstract
Extreme ultraviolet lithography (EUVL) technology was proposed and progressed on both hemispheres in the latter part of the 1980s, independently. Although this technology is a design using a catoptric system instead of refraction lens and the accuracy of subnanometer is demanded for all component engineering, the research and development of Japan and the United States has led to significant breakthroughs in processing and measurement technology over the past 20 years. EUVL is now the most promising next-generation technology for large scale integration fabrication. This article discusses the beginnings of EUVL, what advances are needed, and future prospects.
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Cites
Relative contributions of greenhouse gas emissions to global warming
Lashof, D. A., & Ahuja, D. R. (1990) · Nature · doi:10.1038/344529a0 · Cited by 1,595 · see citing works
Soft x-ray reduction lithography using multilayer mirrors
Kinoshita, H., Kurihara, K., Ishii, Y., & Torii, Y. (1989) · Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena · doi:10.1116/1.584507 · Cited by 270 · see citing works
Self-citationMolybdenum-silicon multilayer mirrors for the extreme ultraviolet
Barbee, T. W., Mrowka, S., & Hettrick, M. C. (1985) · Applied Optics · doi:10.1364/ao.24.000883 · Cited by 220 · see citing works
Reduction imaging at 14 nm using multilayer-coated optics: Printing of features smaller than 0.1 μm
Bjorkholm, J. E., Bokor, J., Eichner, L., Freeman, R. R., Gregus, J., Jewell, T. E., Mansfield, W. M., Mac Dowell, A. A., Raab, E. L., Silfvast, W. T., et al. (1990) · Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena · doi:10.1116/1.585106 · Cited by 161 · see citing works
Soft x-ray projection lithography using an x-ray reduction camera
Hawryluk, A. M., & Seppala, L. G. (1988) · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · doi:10.1116/1.584107 · Cited by 125 · see citing works
Tenth micron lithography with a 10 Hz 37.2 nm sodium laser
Silfvast, W. T., & Wood, O. R. (1988) · Microelectronic Engineering · doi:10.1016/0167-9317(88)90003-2 · Cited by 46 · see citing works
Large-area, high-resolution pattern replication by the use of a two-aspherical-mirror system
Kinoshita, H., Kurihara, K., Mizota, T., et al. (1993) · Applied Optics · doi:10.1364/ao.32.007079 · Cited by 24 · see citing works
Self-citationTwo-mirror telecentric optics for soft x-ray reduction lithography
Kurihara, K., Kinoshita, H., Mizota, T., et al. (1991) · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · doi:10.1116/1.585314 · Cited by 22 · see citing works
Self-citationReflection mask technology for x-ray projection lithography
Hawryluk, A. M., Ceglio, N. M., & Gaines, D. P. (1989) · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · doi:10.1116/1.584486 · Cited by 19 · see citing works
Lovas, I., Santy, W., Spiller, E., Tibbetts, R., & Wilczynski, J. (1982) · SPIE Proceedings · doi:10.1117/12.933138 · Cited by 17 · see citing works
Current research activities in the field of multilayers for soft X-rays in Japan
Namioka, T. (1988) · Revue de Physique Appliquée · doi:10.1051/rphysap:0198800230100171100 · Cited by 16 · see citing works
A step-and-repeat x-ray exposure system for 0.5 μm pattern replication
Hayasaka, T., Ishihara, S., Kinoshita, H., & Takeuchi, N. (1985) · Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena · doi:10.1116/1.582942 · Cited by 15 · see citing works
Self-citationSoft x-ray projection lithography using a 1:1 ring field optical system
MacDowell, A. A., Bjorkholm, J. E., Bokor, J., et al. (1991) · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · doi:10.1116/1.585315 · Cited by 12 · see citing works
Preparation of Multi-Layered Tungsten-Carbon Films by Ion-Beam Sputtering
Takei, K., & Maeda, Y. (1985) · Japanese Journal of Applied Physics · doi:10.1143/jjap.24.1366 · Cited by 9 · see citing works
X-Ray And Extreme Ultraviolet Imaging Using Layered Synthetic Microstructures
UNDERWOOD, J. H., Barbee, T. W., & Shealy, D. L. (1982) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.933135 · Cited by 8 · see citing works
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Extreme ultraviolet lithography
Kazazis, D., Santaclara, J. G., van Schoot, J., Mochi, I., & Ekinci, Y. (2024) · Nature Reviews Methods Primers · doi:10.1038/s43586-024-00361-z · Cited by 149 · see citing works
Recent Advances in Metal-Oxide-Based Photoresists for EUV Lithography
Hasan, M. W., Deeb, L., Kumaniaev, S., Wei, C., & Wang, K. (2024) · Micromachines · doi:10.3390/mi15091122 · Cited by 29 · see citing works
“At the end of the 20th century, EUVL emerged as a promising technology for high-resolution patterning in semiconductor manufacturing [1].”
Background
- Authors
- Kinoshita, H.
- Affiliations
- University of Hyogo (JP)
- Corresponding author
- Kinoshita, Hiroo
- Venue
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
- Publisher
- American Vacuum Society
- Published
- 2005-11-01
- Volume
- 23
- Issue
- 6
- Pages
- 2584-2588
- ISSN
- 1071-1023 (ISSN-L)
- 1520-8567
- OpenAlex
- W1994341111
- Cited by
- 25
- References
- 15
- Citations by year
- 2026: 3 · 2025: 3 · 2024: 2 · 2023: 1 · 2021: 2 · 2019: 1 · 2017: 1 · 2014: 1 · 2013: 2
- FWCI
- 2.22
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena (publishedVersion)
- Funders
- High Energy Physics
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Photolithography Techniques
- Physical Sciences › Physics and Astronomy › Radiation › Advanced X-ray Imaging Techniques
- Physical Sciences › Engineering › Biomedical Engineering › Advanced optical system design
- Keywords
- EUV lithography
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