The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Fabrication of metal–oxide–semiconductor devices with extreme ultraviolet lithography
Abstract
This article reports results from the successful fabrication of metal–oxide–semiconductor (MOS) devices with extreme ultraviolet lithography. n-type MOS transistors with gate lengths of 0.1 μm were fabricated and demonstrated good device characteristics. The alignment strategy, mask layout, mask fabrication, and device characteristics will be reported.
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The first metal-oxide-semiconductor transistor was fabricated by EUVL.
“Building on these early groundbreaking results, the first metal -oxide-semiconductor transistor was fabricated by EUVL 17 , highlighting the practical effectiveness of the approach.”
From Extreme ultraviolet lithography (2024) · cites this paper as [17]
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Seeger, D. E., & Equipment, S. (1996) · SPIE eBooks · Cited by 1
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Evolution in Lithography Techniques: Microlithography to Nanolithography
Sharma, E., Rathi, R., Misharwal, J., Sinhmar, B., Kumari, S., Dalal, J., & Kumar, A. (2022) · Nanomaterials · doi:10.3390/nano12162754 · Cited by 257
Extreme ultraviolet lithography
Kazazis, D., Santaclara, J. G., van Schoot, J., Mochi, I., & Ekinci, Y. (2024) · Nature Reviews Methods Primers · doi:10.1038/s43586-024-00361-z · Cited by 149
Metadata
- Authors
- Nguyen, K. B., Cardinale, G. F., Tichenor, D. A., Kubiak, G. D., Berger, K., Ray-Chaudhuri, A. K., Perras, Y., Haney, S. J., Nissen, R., Krenz, K., Stulen, R. H., Fujioka, H., Hu, C., Bokor, J., Tennant, D. M., & Fetter, L. A.
- Affiliations
- Sandia National Laboratories California (US)
- University of California, Berkeley (US)
- University of California, Berkeley, Cory Hall, Berkeley, California 94720
- Bell Laboratories/Lucent Technologies, Holmdel, New Jersey 07733
- Venue
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
- Publisher
- American Vacuum Society
- Published
- 1996-11-01
- Volume
- 14
- Issue
- 6
- Pages
- 4188-4192
- ISSN
- 1071-1023 (ISSN-L)
- 1520-8567
- OpenAlex
- W2170626701
- Cited by
- 11
- References
- 1
- Citations by year
- 2026: 1 · 2025: 1 · 2024: 1 · 2022: 1
- FWCI
- 0.97
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Photolithography Techniques
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Semiconductor Devices and Circuit Design
- Keywords
- MOS devices, EUV lithography, gate length, device fabrication, alignment strategies, photomask fabrication, device characteristics
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