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Mask 3D effects and compensation for high NA EUV lithography
Abstract
Mask shadow compensation for EUV lithography has typically been performed using simple rule-based schemes during optical proximity correction (OPC). However, as feature sizes decrease, the required corrections get more complex as they become dependent on both feature size and type. Thus, OPC models that account for these 3D mask effects are becoming essential. These models become even more important for higher numerical aperture EUV systems due to larger angles of incidence on the mask and tighter process budgets for CD and overlay. This paper will focus on estimating these 3D mask effects and evaluate the extendibility of current available OPC models for some specific higher numerical aperture EUV systems. It is concluded that the current available 3D mask models are capturing the primary effects and it is believed that with further refinement they are likely extendable to meet the needs of future high-NA tools. Additionally, a combination of thinner mask absorber, tighter scanner focus control and/or larger optical magnification will likely be required to print sub-30nm pitch structures with higher numerical aperture EUV systems.
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“Because the absorber layer on the mask has a finite thickness, this can lead to shadowing effects 25 , which have to be mitigated.”
From Extreme ultraviolet lithography (2024) · cites this paper as [25]
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Extreme ultraviolet lithography and three dimensional integrated circuit—A review
Wu, B., & Kumar, A. (2014) · Applied Physics Reviews · doi:10.1063/1.4863412 · Cited by 158
Extreme ultraviolet lithography
Kazazis, D., Santaclara, J. G., van Schoot, J., Mochi, I., & Ekinci, Y. (2024) · Nature Reviews Methods Primers · doi:10.1038/s43586-024-00361-z · Cited by 149
“Because the absorber layer on the mask has a finite thickness, this can lead to shadowing effects 25 , which have to be mitigated.”
Perspectives and tradeoffs of absorber materials for high NA EUV lithography
Erdmann, A. A., Mesilhy, H., Evanschitzky, P., et al. (2020) · Journal of Micro/Nanopatterning Materials and Metrology · doi:10.1117/1.jmm.19.4.041001 · Cited by 46
Zhang, Z., Li, S., Wang, X., Cheng, W., & Qi, Y. (2021) · Optics Express · doi:10.1364/oe.418242 · Cited by 42
Erdmann, A. A., Mesilhy, H., & Evanschitzky, P. (2022) · Journal of Micro/Nanopatterning Materials and Metrology · doi:10.1117/1.jmm.21.2.020901 · Cited by 29
Erdmann, A. A., Evanschitzky, P., Mesilhy, H., et al. (2018) · Journal of Micro/Nanopatterning Materials and Metrology · doi:10.1117/1.jmm.18.1.011005 · Cited by 21
Raghunathan, S., Wood, O. R., Mangat, P. J. S., et al. (2014) · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · doi:10.1116/1.4901876 · Cited by 21
Self-citationAttenuated PSM for EUV: Can they mitigate 3D mask effects?
Erdmann, A. A., Evanschitzky, P., Philipsen, V., et al. (2018) · doi:10.1117/12.2299648 · Cited by 21
Fast extreme ultraviolet lithography mask near-field calculation method based on machine learning
Lin, J., Dong, L., Fan, T., et al. (2020) · Applied Optics · doi:10.1364/ao.384407 · Cited by 19
EUV and e-beam manufacturability
Chang, Y., Liu, R.-G., & Fang, S. (2015) · Proceedings - ACM IEEE Design Automation Conference · doi:10.1145/2744769.2747925 · Cited by 15
“To compensate the shadowing effect in advanced process nodes, therefore, recent studies mainly focus on developing model-based OPC techniques [26, 28, 33].”
BackgroundFast rigorous mask model for extreme ultraviolet lithography
Zhang, Z., Li, S., Wang, X., et al. (2020) · Applied Optics · doi:10.1364/ao.399323 · Cited by 13
EUV telecentricity and shadowing errors impact on process margins
Civay, D. E., Hosler, E. R., Chauhan, V., et al. (2015) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.2087639 · Cited by 11
“It is misleading to conclude that no shadowing would affect the minor axis in Figure 5 (A), because the light is not exclusively incident at 6.(5) A range of angles are incident on the wafer.”
BackgroundWang, Q., Wu, Q., Li, Y., et al. (2025) · Micromachines · doi:10.3390/mi16101166 · Cited by 5
“For efficient simulation, trade-offs between harmonic truncation orders of diffraction, density of layer discretization, grid of segmentation and computational cost have been optimized [27].”
Challenges of anamorphic high-NA lithography and mask making
Hsu, S., & Liu, J. (2017) · Advanced Optical Technologies · doi:10.1515/aot-2017-0024 · Cited by 4
Fast EUV Lithography Source Optimization Using Cascade Compressed Sensing
Lin, J., Dong, L., Fan, T., et al. (2021) · IEEE Transactions on Nanotechnology · doi:10.1109/tnano.2021.3124933 · Cited by 4
Kang, I.-H., Park, J.-G., Ban, C.-H., et al. (2021) · Japanese Journal of Applied Physics · doi:10.35848/1347-4065/abf2d1 · Cited by 3
Image-based EUVL aberration metrology
Fenger, G. L. (2013) · RIT Scholar Works (Rochester Institute of Technology) · Cited by 3
Self-citationPattern fidelity verification for logic design in EUV lithography
Sugawara, M., Hendrickx, E., Philipsen, V., et al. (2014) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.2046096 · Cited by 2
Self-citationKim, G.-J., Kim, I.-S., Yeung, M. S., et al. (2016) · Journal of Micro/Nanopatterning Materials and Metrology · doi:10.1117/1.jmm.15.2.023503 · Cited by 2
Jing, 曹. C., & Nan, 林. L. (2025) · Laser & Optoelectronics Progress · doi:10.3788/lop250460 · Cited by 1
Fast mask model for extreme ultraviolet lithography with a slanted absorber sidewall
Zhang, Z., Li, S., Wang, X., et al. (2021) · Applied Optics · doi:10.1364/ao.427712 · Cited by 1
Maloney, C. (2014) · RIT Scholar Works (Rochester Institute of Technology)
Applications of RCWA on EUV mask optics
Fan, T., Wei, Y., & Dong, L. (2017) · International Conference on Extreme Ultraviolet Lithography · doi:10.1117/12.2280445
Optimization of absorber and multilayer in EUV mask for 1D and 2D patterns
Fan, T., Yang, Z., Dong, L., et al. (2018) · International Conference on Extreme Ultraviolet Lithography · doi:10.1117/12.2501463
Chien, J.-W., & Lee, E. (2026) · Electronics · doi:10.3390/electronics15153355
Rui, D., Libin, 张. Z., Wei, Y., et al. (2026) · Acta Optica Sinica · doi:10.3788/aos251639
Metadata
- Authors
- Raghunathan, S., McIntyre, G., Fenger, G., & Wood, O.
- Affiliations
- GlobalFoundries (United States) (US)
- IBM (United States) (US)
- ORCID
- Fenger, Germain
- Venue
- SPIE Proceedings
- Publisher
- SPIE
- Published
- 2013-04-01
- Volume
- 8679
- Pages
- 867918
- ISSN
- 0277-786X (ISSN-L)
- OpenAlex
- W2055095265
- Cited by
- 27
- References
- 0
- Citations by year
- 2026: 3 · 2025: 2 · 2024: 1 · 2022: 1 · 2021: 4 · 2020: 3 · 2018: 3 · 2017: 2 · 2016: 1 · 2015: 2 · 2014: 4 · 2013: 1
- FWCI
- 3.25
- Type
- conference paper
- Language
- en
- Open access
- closed
- Locations
- Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Photolithography Techniques
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Advanced optical system design
- Physical Sciences › Physics and Astronomy › Radiation › Advanced X-ray Imaging Techniques
- Keywords
- EUV lithography, high numerical aperture, optical proximity correction, optical magnification, critical dimension control, overlay control
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