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Mask 3D effects and compensation for high NA EUV lithography
Abstract
Mask shadow compensation for EUV lithography has typically been performed using simple rule-based schemes during optical proximity correction (OPC). However, as feature sizes decrease, the required corrections get more complex as they become dependent on both feature size and type. Thus, OPC models that account for these 3D mask effects are becoming essential. These models become even more important for higher numerical aperture EUV systems due to larger angles of incidence on the mask and tighter process budgets for CD and overlay. This paper will focus on estimating these 3D mask effects and evaluate the extendibility of current available OPC models for some specific higher numerical aperture EUV systems. It is concluded that the current available 3D mask models are capturing the primary effects and it is believed that with further refinement they are likely extendable to meet the needs of future high-NA tools. Additionally, a combination of thinner mask absorber, tighter scanner focus control and/or larger optical magnification will likely be required to print sub-30nm pitch structures with higher numerical aperture EUV systems.
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“Because the absorber layer on the mask has a finite thickness, this can lead to shadowing effects 25 , which have to be mitigated.”
From Extreme ultraviolet lithography (2024) · cites this paper as [25]
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Extreme ultraviolet lithography and three dimensional integrated circuit—A review
Wu, B., & Kumar, A. (2014) · Applied Physics Reviews · doi:10.1063/1.4863412 · Cited by 158
Extreme ultraviolet lithography
Kazazis, D., Santaclara, J. G., van Schoot, J., Mochi, I., & Ekinci, Y. (2024) · Nature Reviews Methods Primers · doi:10.1038/s43586-024-00361-z · Cited by 149
“Because the absorber layer on the mask has a finite thickness, this can lead to shadowing effects 25 , which have to be mitigated.”
Perspectives and tradeoffs of absorber materials for high NA EUV lithography
Erdmann, A. A., Mesilhy, H., Evanschitzky, P., et al. (2020) · Journal of Micro/Nanopatterning Materials and Metrology · doi:10.1117/1.jmm.19.4.041001 · Cited by 46
Zhang, Z., Li, S., Wang, X., Cheng, W., & Qi, Y. (2021) · Optics Express · doi:10.1364/oe.418242 · Cited by 42
Erdmann, A. A., Mesilhy, H., & Evanschitzky, P. (2022) · Journal of Micro/Nanopatterning Materials and Metrology · doi:10.1117/1.jmm.21.2.020901 · Cited by 29
Metadata
- Authors
- Raghunathan, S., McIntyre, G., Fenger, G., & Wood, O.
- Affiliations
- GlobalFoundries (United States) (US)
- IBM (United States) (US)
- ORCID
- Fenger, Germain
- Venue
- SPIE Proceedings
- Publisher
- SPIE
- Published
- 2013-04-01
- Volume
- 8679
- Pages
- 867918
- ISSN
- 0277-786X (ISSN-L)
- OpenAlex
- W2055095265
- Cited by
- 27
- References
- 0
- Citations by year
- 2026: 3 · 2025: 2 · 2024: 1 · 2022: 1 · 2021: 4 · 2020: 3 · 2018: 3 · 2017: 2 · 2016: 1 · 2015: 2 · 2014: 4 · 2013: 1
- FWCI
- 3.25
- Type
- conference paper
- Language
- en
- Open access
- closed
- Locations
- Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Photolithography Techniques
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Advanced optical system design
- Physical Sciences › Physics and Astronomy › Radiation › Advanced X-ray Imaging Techniques
- Keywords
- EUV lithography, high numerical aperture, optical proximity correction, optical magnification, critical dimension control, overlay control
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