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EUV pellicle scanner integration for N2 nodes and beyond
Abstract
EUV lithography has been adopted worldwide for High-Volume Manufacturing (HVM) of sub-10nm node semiconductors. To support HVM, EUV pellicles were introduced by ASML in 2016. More recently, several novel pellicle materials have been developed to offer higher transmission and support higher source powers. The current focus is on two classes of pellicles to support the upcoming NXE:3800 and the associated N2 node, and beyond: Si-based composites and CNT-based pellicles. In this paper, we will give an overview of scanner integration results of current EUV pellicles, both Si-based composites and CNT-based pellicles. This overview will cover high-level aspects of transmission, imaging, robustness and lifetime; as well as underlying contributors such as EUV-uniformity, EUV-reflectivity, flare and DUV-reflectivity. Reviewing achieved performance will illustrate the suitability of these materials to support advanced nodes in production. Additionally, the anticipated future performance of EUV pellicles when used with increasing EUV source powers and high-NA scanners will be provided.
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“To overcome the 3D mask effect, both low refractive index (low -n ) and high extinction coefficient (high -k ) masks have been proposed 10 9 -112 .”
From Extreme ultraviolet lithography (2024) · cites this paper as [111]
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Extreme ultraviolet lithography
Kazazis, D., Santaclara, J. G., van Schoot, J., Mochi, I., & Ekinci, Y. (2024) · Nature Reviews Methods Primers · doi:10.1038/s43586-024-00361-z · Cited by 149
Ronse, K. (2024) · IEEE Electron Devices Magazine · doi:10.1109/med.2023.3336276 · Cited by 14
Metadata
- Authors
- van de Kerkhof, M. A., Klein, A., Seoane, B., Vermeulen, P., Gallagher, E., Timmermans, M. Y., Pollentier, I., & Bekaert, J.
- Affiliations
- ASML (Netherlands) (NL)
- IMEC (BE)
- Venue
- Optical and EUV Nanolithography XXXVI
- Publisher
- SPIE
- Published
- 2023-04-28
- Pages
- 21
- OpenAlex
- W4367297027
- Cited by
- 16
- References
- 0
- Citations by year
- 2026: 3 · 2025: 2 · 2024: 9 · 2023: 2
- Type
- conference abstract
- Language
- en
- Open access
- closed
- Locations
- SPIE Optical and EUV Nanolithography (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Photolithography Techniques
- Physical Sciences › Physics and Astronomy › Radiation › Advanced X-ray Imaging Techniques
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Advanced optical system design
- Keywords
- EUV pellicle, EUV lithography, EUV reflectivity, flares
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- CoChat. (2026). Citation check: EUV pellicle scanner integration for N2 nodes and beyond. https://app.cochat.ai/papers/10.1117/12.2658353
- The paper
- van de Kerkhof, M. A., Klein, A., Seoane, B., Vermeulen, P., Gallagher, E., Timmermans, M. Y., Pollentier, I., & Bekaert, J. (2023). EUV pellicle scanner integration for N2 nodes and beyond. Optical and EUV Nanolithography XXXVI. https://doi.org/10.1117/12.2658353
