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Status of EUV micro-exposure capabilities at the ALS using the 0.3-NA MET optic
Abstract
The success of recent static printing experiments at Lawrence Berkeley National Laboratory’s Advanced Light Source (ALS) using the EUV LLC Engineering Test Stand (ETS) Set-2 optic has demonstrated the utility of synchrotron-based EUV exposure stations. Although not viable light sources for commercial lithography, synchrotrons provide clean, convenient, and extremely flexible sources for developmental microfield lithography. The great flexibility of synchrotron-based illumination arises from the fact that such sources facilitate active coherence reduction, thus enabling the coherence function, or pupil fill, to be actively sculpted in real time. As the commercialization of EUV progresses, the focus of developmental EUV lithography is shifting from low numerical aperture (NA) tools such as the 0.1-NA ETS to higher-NA tools such as the 0.3-NA Micro Exposure Tool (MET). To support printing with MET optics at the ALS, a new printing station has been developed, relying on a scanning illuminator to provide programmable coherence (pupil-fill) control. The illuminator is designed to operate up to a coherence factor (s) of 1 and support the full 200′600 design printed field of view. In addition to a new illuminator design, new focus sensing and dose-control systems have also been implemented. Here we describe the MET printing capabilities in detail and present preliminary printing results with the Sematech Set-2 MET optic.
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Extreme ultraviolet lithography
Kazazis, D., Santaclara, J. G., van Schoot, J., Mochi, I., & Ekinci, Y. (2024) · Nature Reviews Methods Primers · doi:10.1038/s43586-024-00361-z · Cited by 149
“Micro-exposure tools 40,41 were the first instruments used for photoresist evaluation.”
Thiyagarajan, M., Dean, K., & Consalves, K. E. (2005) · Journal of Photopolymer Science and Technology · doi:10.2494/photopolymer.18.737 · Cited by 60
System-level line-edge roughness limits in extreme ultraviolet lithography
Naulleau, P. P., Niakoula, D., & Zhang, G. (2008) · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · doi:10.1116/1.2932100 · Cited by 40
Self-citationNaulleau, P. P., Goldberg, K. A., Anderson, E., et al. (2004) · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · doi:10.1116/1.1802851 · Cited by 36
Self-citationNaulleau, P. P., Anderson, C. N., Chiu, J., et al. (2009) · Microelectronic Engineering · doi:10.1016/j.mee.2009.03.013 · Cited by 31
Self-citationGlatzel, H., Ashworth, D., Bremer, M., et al. (2013) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.2012698 · Cited by 28
“3 NA EUV METs have been supporting EUV resist materials readiness for a 22/16 nm half-pitch EUV introduction [3] [14] [15].”
BackgroundSelf-citationAnderson, C. N., & Naulleau, P. P. (2009) · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · doi:10.1116/1.3100270 · Cited by 21
Self-citationNaulleau, P. P., & George, S. A. (2009) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.824265 · Cited by 21
“The imaging was performed using the SEMATECH Berkeley microfield exposure tool (BMET) [6,7] which has a NA of 0.”
MethodSelf-citationInvestigation of the current resolution limits of advanced extreme ultraviolet (EUV) resists
Naulleau, P. P., Rammeloo, C., Cain, J. P., et al. (2006) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.657005 · Cited by 19
Self-citationEUV lithography patterning challenges
Naulleau, P. P. (2016) · Frontiers of nanoscience · doi:10.1016/b978-0-08-100354-1.00005-3 · Cited by 18
Self-citationNaulleau, P. P. (2009) · Applied Optics · doi:10.1364/ao.48.003302 · Cited by 17
Self-citationLatest results from the SEMATECH Berkeley extreme ultraviolet microfield exposure tool
Naulleau, P. P., Anderson, C. N., Chiu, J., et al. (2009) · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · doi:10.1116/1.3043473 · Cited by 16
Self-citationStochastics and EUV Patterning in the 1x-nm Regime
Naulleau, P. P., Anderson, C. N., Chao, W. L., et al. (2016) · Journal of Photopolymer Science and Technology · doi:10.2494/photopolymer.29.797 · Cited by 16
Self-citationA design study for synchrotron-based high-numerical-aperture scanning illuminators
Naulleau, P. P., Denham, P., Hoef, B., et al. (2004) · Optics Communications · doi:10.1016/j.optcom.2004.02.021 · Cited by 14
Self-citationAnderson, C. N., & Naulleau, P. P. (2009) · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · doi:10.1116/1.3032901 · Cited by 14
Self-citationNaulleau, P. P., Cain, J. P., Anderson, E., et al. (2005) · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · doi:10.1116/1.2127940 · Cited by 13
Self-citationLithographic metrics for the determination of intrinsic resolution limits in EUV resists
Naulleau, P. P., Anderson, C. N., Fontaine, B. L., et al. (2007) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.712363 · Cited by 13
Self-citationStudying Resist Stochastics with the Multivariate Poisson Propagation Model
Naulleau, P. P., Anderson, C. N., Chao, W. L., et al. (2014) · Journal of Photopolymer Science and Technology · doi:10.2494/photopolymer.27.747 · Cited by 12
Self-citationBenchmarking of commercial EUVL resists at SEMATECH
Ma, A. K., Park, J.-O., Dean, K., et al. (2008) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.775037 · Cited by 12
“The RTC is based on a commercial implementation of an EUV microfield exposure tool with a stand-alone source [1] whereas the SEMATECH Berkeley Microfield exposure tool [2] is based on a research and development tool developed at Lawrence Berkeley National Laboratory and installed at the Advanced Light Source synchrotr…”
MethodSelf-citationNewly developed polymer bound photoacid generator resist for sub-100-nm pattern by EUV lithography
Gonsalves, K. E., Thiyagarajan, M., & Dean, K. (2005) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.602087 · Cited by 12
Extreme Ultraviolet Lithography Capabilities at the Advanced Light Source Using a 0.3-NA Optic
Naulleau, P. P., Goldberg, K. A., Cain, J. P., et al. (2005) · IEEE Journal of Quantum Electronics · doi:10.1109/jqe.2005.858450 · Cited by 12
“Model depicting the major exposure station components and the EUV beam path (the system is described in detail in [5]).”
BackgroundSelf-citationNaulleau, P. P., Anderson, C. N., Chiu, J., et al. (2008) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.773833 · Cited by 12
“Emerging Lithographic Technologies XII, edited by Frank M. Schellenberg Proc. of SPIE Vol. 6921, 69213N, (2008) · 0277-786X/08/$18 · doi: 10.1117/12.773833 Proc. of SPIE Vol. 6921 69213N-1 Although the SEMATECH Berkeley MET utilizes essentially the same projection optics design as commercial METs [2,3], the unique los…”
BackgroundResultInfluentialSelf-citationApplications of Microstructured Optical Fibers in Ultrafast Optics: A Review
Tang, Z., Zheng, Z., Li, B., et al. (2024) · Photonics · doi:10.3390/photonics11020151 · Cited by 11
New ways of looking at masks with the SHARP EUV microscope
Goldberg, K. A., Benk, M. P., Wojdyla, A., Johnson, D., & Donoghue, A. P. (2015) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.2175553 · Cited by 12
“The mask was created on a 6-inch silicon wafer with a conventional Mo/Si EUV multilayer, coated with resist, and exposed in the Berkeley Microfield Exposure Tool (BMET).(17) Printing directly into photoresist and developing in a single step simplified the mask-creation process by eliminating the need to subsequently e…”
MethodSelf-citationA high-throughput contact-hole resolution metric for photoresists: full-process sensitivity study
Anderson, C. N., & Naulleau, P. P. (2008) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.768551 · Cited by 10
Self-citationRecent results from the Berkeley 0.3-NA EUV microfield exposure tool
Naulleau, P. P., Anderson, C. N., Dean, K., et al. (2007) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.713440 · Cited by 10
“One of the most productive and highest performing EUV microfield exposure tools available has been the Berkeley MET tool [3,8,9] operating as a SEMATECH resist test center since early 2004.”
BackgroundMethodSelf-citationExtreme ultraviolet interference lithography with incoherent light
Naulleau, P. P., Anderson, C. N., & Horne, S. F. (2007) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.715069 · Cited by 10
Self-citationEffects of mask absorber structures on the extreme ultraviolet lithography
Seo, H.-S., Lee, D., Kim, H., et al. (2008) · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · doi:10.1116/1.3002488 · Cited by 9
Update on the SEMATECH 0.5 NA Extreme-Ultraviolet Lithography (EUVL) Microfield Exposure Tool (MET)
Cummings, K. D., Ashworth, D., Bremer, M., et al. (2014) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.2046380 · Cited by 9
“3 NA EUV METs have been supporting EUV resist materials readiness for a 22/16 nm half-pitch introduction [2] [9] [10].”
BackgroundSelf-citationExtending shearing interferometry to high-NA for EUV optical testing
Miyakawa, R. H., & Naulleau, P. P. (2015) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.2087568 · Cited by 8
“sin θ0 = sin θi + λ T (+1 order diffraction) (3)”
BackgroundSelf-citationUltrahigh efficiency EUV contact-hole printing with chromeless phase shift mask
Naulleau, P. P., Anderson, C. N., Chao, W. L., et al. (2016) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.2243321 · Cited by 8
“Figure 1 shows both dense 20 nm lines and spaces and contacts printed on the Berkeley MET tool [4,5] in an identical high resolution chemically amplified resist.”
MethodSelf-citationThe SEMATECH Berkeley microfield exposure tool: learning at the 22-nm node and beyond
Naulleau, P. P., Anderson, C. N., Baclea-an, L.-M., et al. (2009) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.814232 · Cited by 8
“In the case of the SEMATECH Berkeley MET (BMET) [1,6,7], the higher NA is further enhanced by a unique programmable coherence illuminator allowing it to implement resolution enhancing illumination and achieve lower k1 values (in principle, as low as 0.”
BackgroundMethodSelf-citationNaulleau, P. P., Cain, J. P., & Goldberg, K. A. (2005) · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · doi:10.1116/1.2037647 · Cited by 8
Self-citationNaulleau, P. P., Cain, J. P., & Goldberg, K. A. (2006) · Applied Optics · doi:10.1364/ao.45.001957 · Cited by 8
Self-citationComparative study of mask architectures for EUV lithography
Pawloski, A. R., Fontaine, B. L., Levinson, H., et al. (2004) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.569289 · Cited by 7
“3NA, 5× reduction system with a fully programmable pupil fill.(18) The source of radiation is from the Advanced Light Source (ALS), a synchrotron radiation source, and provides highly coherent, narrow band EUV radiation at 13.”
BackgroundSelf-citationDefect printability study using EUV lithography
Holfeld, C., Bubke, K., Lehmann, F., et al. (2006) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.656386 · Cited by 7
Pushing extreme ultraviolet lithography development beyond 22 nm half pitch
Naulleau, P. P., Anderson, C. N., Baclea-an, L.-M., et al. (2009) · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · doi:10.1116/1.3237092 · Cited by 7
Self-citationAnderson, C. N., Naulleau, P. P., Niakoula, D., et al. (2008) · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · doi:10.1116/1.2968615 · Cited by 7
Self-citationCain, J. P., Naulleau, P. P., & Spanos, C. J. (2006) · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · doi:10.1116/1.2162578 · Cited by 7
Self-citationNew resists for nanometer scale patterning by extreme ultraviolet lithography
Gonsalves, K. E., Thiyagarajan, M., & Dean, K. (2005) · Journal of Micro/Nanopatterning Materials and Metrology · doi:10.1117/1.1898604 · Cited by 6
Effect of carbon contamination on the printing performance of extreme ultraviolet masks
Fan, Y.-J., Yankulin, L., Antohe, A. O., et al. (2010) · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · doi:10.1116/1.3333434 · Cited by 5
Self-citationCarbon contamination of extreme ultraviolet (EUV) masks and its effect on imaging
Fan, Y.-J., Yankulin, L., Antohe, A. O., et al. (2009) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.814196 · Cited by 5
“Based on previous CD measurements using a reticle SEM and the Berkeley MET, we learned that the carbon thickness can be different compared to the sidewall of the absorbing features.”
MethodInfluentialSelf-citationCurrent development status of HSFET (High NA Small Field Exposure Tool) in EIDEC
Tanaka, S., Magoshi, S., Kawai, H., et al. (2016) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.2219368 · Cited by 5
“INTRODUCTION Since the mid-90s, several small-field micro exposure tools have been developed for EUVL process development [1-8].”
BackgroundCritical dimension sensitivity to post-exposure bake temperaturevariation in EUV photoresists
Cain, J. P., Naulleau, P. P., & Spanos, C. J. (2005) · University of North Texas Digital Library (University of North Texas) · Cited by 5
Self-citationChauhan, M. S., Palit, K., Choudhary, S. K., Sharma, S. K., & Gonsalves, K. E. (2022) · Journal of Micro/Nanopatterning Materials and Metrology · doi:10.1117/1.jmm.21.4.044603 · Cited by 7
“5 for chip fabricators.(5,6) Furthermore, to enable sub-10 nm (hp) printing nodes by virtue of the same single exposure EUV, an h-NA ∼ 0.”
Tanaka, Y., Kikuchi, Y., Goo, D., et al. (2007) · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · doi:10.1116/1.2787867 · Cited by 4
The SEMATECH Berkeley MET: extending EUV learning down to 16nm half pitch
Anderson, C. N., Baclea-an, L.-M., Denham, P., et al. (2011) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.881573 · Cited by 4
“3-numerical-aperture (NA) SEMATECH Berkeley Microfield Exposure Tool (BMET).(1) With its unique engineered coherence capabilities(4) the BMET is able to access aerial image resolutions well beyond the 22-nm limit of the current champion chemically amplified (CA) resist.”
Self-citationEnabling EUV Resist Research at the 1x and Smaller Regime
Naulleau, P. P., Anderson, C. N., Chao, W. L., et al. (2015) · Journal of Photopolymer Science and Technology · doi:10.2494/photopolymer.28.777 · Cited by 3
Self-citationOptical proximity correction for anamorphic extreme ultraviolet lithography
Clifford, C. H., Lam, M. C., Raghunathan, A., et al. (2017) · Journal of Micro/Nanopatterning Materials and Metrology · doi:10.1117/1.jmm.16.4.041004 · Cited by 3
Resist-based measurement of the contrast transfer function in a 0.3-NA EUV microfield optic
Cain, J. P., Naulleau, P. P., & Spanos, C. J. (2005) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.600427 · Cited by 3
Self-citationComparison of EUV mask architectures by process window analysis
Schwarzl, S., Kamm, F.-M., Hirscher, S., et al. (2005) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.599343 · Cited by 3
“3 NA, 5x reduction system with a fully programmable illumination pupil fill [2].”
BackgroundPrintability of nonsmoothed buried defects in extreme ultraviolet lithography mask blanks
Farys, V., Charpin-Nicolle, C., Richard, M., et al. (2005) · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · doi:10.1116/1.2135293 · Cited by 2
Self-citationAIS wavefront sensor: a robust optical test of exposure tools using localized wavefront curvature
Miyakawa, R. H., Zhou, X., Goldstein, M., et al. (2014) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.2048389 · Cited by 2
“On MET5 and other exposure tools, this will not be an issue because these systems are designed to have fixed magnification through-focus.(4) In this experiment, 6 different input wavefront configurations were considered: Z4 (astigmatism), Z6 (coma), Z8 (spherical), Z10 (trefoil), and a linear combination of Z4 through…”
BackgroundSelf-citationEUV extendibility research at Berkeley Lab
Naulleau, P. P., Anderson, C. N., Benk, M. P., et al. (2017) · International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) · doi:10.1109/vlsi-tsa.2017.7942463 · Cited by 2
“As with the current Berkeley MET, the new MET will also utilize a high purity synchrotron source and support fully programmable lossless illumination and will also include programmable field size.”
MethodSelf-citationTabletop storage ring MIRRORCLE extreme ultraviolet lithography source
Yamada, H., Minkov, D. A., Hayashi, T., et al. (2012) · Journal of Micro/Nanopatterning Materials and Metrology · doi:10.1117/1.jmm.11.2.021121 · Cited by 1
An Introduction to Extreme-Ultraviolet Lithography
Nishiyama, I. (2008) · The Review of Laser Engineering · doi:10.2184/lsj.36.673 · Cited by 1
Influence of base and PAG on deprotection blur in EUV photoresists and some thoughts on shot noise
Jones, J., Anderson, C. N., Naulleau, P. P., et al. (2008) · University of North Texas Digital Library (University of North Texas) · Cited by 1
Self-citationCorrelation of EUV resist performance metrics in micro-exposure and full-field EUV projection tools
Wallow, T. I., Pierson, B., Mizuno, H., et al. (2009) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.814457 · Cited by 1
“The tool is described in more detail elsewhere.(22) All MET exposures described in this report used annular illumination with sigma(inner/outer) = 0.”
MethodSelf-citationAdvanced resist testing using the SEMATECH Berkeley extreme ultraviolet microfield exposure tool
Naulleau, P. P., Anderson, C. N., Dean, K., et al. (2007) · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · doi:10.1116/1.2781522 · Cited by 1
Self-citationMask Roughness Induced LER in EUV Lithography
McClinton, B. M. (2011) · UC Berkeley · Cited by 1
Anderson, C. N., & Naulleau, P. P. (2008) · University of North Texas Digital Library (University of North Texas)
Self-citationMOSAIC: a new wavefront metrology
Anderson, C. N., & Naulleau, P. P. (2009) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.814303
Self-citationEUV resist simulation with rigorous mask computation and simplified resist models
Jouve, A., Fuard, D., & Farys, V. (2006) · Microelectronic Engineering · doi:10.1016/j.mee.2006.01.077
Advances in extreme-UV lithography
Naulleau, P. P. (2009) · SPIE Newsroom · doi:10.1117/2.1200904.1591
Self-citationAnderson, C. N., & Naulleau, P. P. (2007) · International Nano-Optoelectronics Workshop · doi:10.1109/inow.2007.4302952
“Although the SEMATCH Berkeley Microfield Exposure Tool (MET) [1] has been the premier EUV printing facility since its inception, the full-field printing capabilities of the tool have often been hampered by daily changes in tool illumination uniformity.”
MethodSelf-citationAdvanced 0.3-NA EUV lithography capabilities at the ALS
Naulleau, P. P., Anderson, E., Dean, K., et al. (2005) · OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)
Self-citationPushing EUV lithography development beyond 22-nm half pitch
Naulleau, P. P., Anderson, C. N., Baclea-an, L.-M., et al. (2009) · University of North Texas Digital Library (University of North Texas)
Self-citationOptical proximity correction for anamorphic extreme ultraviolet lithography
Clifford, C. H., Lam, M. C., Raghunathan, A., et al. (2017) · International Conference on Extreme Ultraviolet Lithography · doi:10.1117/12.2280548
(2015) · Inactive DOIs · doi:10.2494/photopolymer.28.789
Metadata
- Authors
- Naulleau, P., Goldberg, K. A., Anderson, E. H., Bradley, K., Delano, R., Denham, P., Gunion, B., Harteneck, B., Hoef, B., Huang, H., Jackson, K., Jones, G., Kemp, D., Liddle, J. A., Oort, R., Rawlins, A., Rekawa, S., Salmassi, F., Tackaberry, R., Chung, C., Hale, L., Phillion, D., Sommargren, G., & Taylor, J.
- Affiliations
- Lawrence Berkeley National Laboratory (US)
- Lawrence Livermore National Laboratory (US)
- Venue
- SPIE Proceedings
- Publisher
- SPIE
- Published
- 2004-05-20
- Volume
- 5374
- Pages
- 881
- ISSN
- 0277-786X (ISSN-L)
- OpenAlex
- W2061963067
- Cited by
- 70
- References
- 0
- Citations by year
- 2025: 1 · 2024: 2 · 2022: 1 · 2017: 3 · 2016: 4 · 2015: 4 · 2014: 3 · 2013: 1 · 2012: 1
- FWCI
- 10.34
- Type
- conference paper
- Language
- nl
- Open access
- closed
- Locations
- Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (publishedVersion)
- Funders
- U.S. Department of Energy
- Basic Energy Sciences
- Lawrence Berkeley National Laboratory
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Photolithography Techniques
- Physical Sciences › Physics and Astronomy › Radiation › Advanced X-ray Imaging Techniques
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Advanced optical system design
- Keywords
- EUV lithography, dose control
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