First performance results of the ASML alpha demo tool
Abstract
The ASML EUV alpha demo tool is operational! The alpha demo tool is a 0.25NA fully functional lithography tool with a field size of 26×33 mm2, enabling process development at the 40-nm technology node. In this paper we describe the tool performance, show that vacuum is achieved in a few hours, and demonstrate that our optics contamination strategy mitigates degradation of the optics. Additional data shows the Sn source cost-of-ownership to be comparable to state-of-the-art ArF source systems, by implementing a collector contamination mitigation strategy that includes cleaning. And, we present our first 35-nm dense lines and spaces (half pitch) resist images.
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The first full-field EUV systems had an NA of 0.25.
“The first full -fi eld EUV systems had an NA of 0.25 34 .”
From Extreme ultraviolet lithography (2024) · cites this paper as [34]
Cites
Plasma sources for EUV lithography exposure tools
Banine, V., & Moors, R. (2004) · Journal of Physics D Applied Physics · doi:10.1088/0022-3727/37/23/001 · Cited by 101 · see citing works
Self-citationExtreme-ultraviolet sources for lithography applications
Banine, V., & Moors, J. (2001) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.436651 · Cited by 42 · see citing works
Self-citationProgress of the EUVL alpha tool
Meiling, H., Benschop, J. P. H., Dinger, U., & Kuerz, P. (2001) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.436675 · Cited by 31 · see citing works
Self-citationDevelopment of the ASML EUV alpha demo tool
Meiling, H., Banine, V., Harned, N., et al. (2005) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.600725 · Cited by 29 · see citing works
Self-citationProgress in the ASML EUV program
Meiling, H., Banine, V., Kuerz, P., et al. (2004) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.534784 · Cited by 21 · see citing works
Self-citationThe EUV program at ASML: an update
Meiling, H., Banine, V., Kuerz, P., et al. (2003) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.483706 · Cited by 20 · see citing works
Self-citationThe first full-field EUV masks ready for printing
Mickan, U., Groeneveld, R., Demarteau, M., et al. (2006) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.692629 · Cited by 3 · see citing works
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Extreme ultraviolet lithography
Kazazis, D., Santaclara, J. G., van Schoot, J., Mochi, I., & Ekinci, Y. (2024) · Nature Reviews Methods Primers · doi:10.1038/s43586-024-00361-z · Cited by 149 · see citing works
Exposure Tool Development Toward Advanced EUV Lithography: A Journey of 40 Years Driving Moore’s Law
Schoot, J. V. (2024) · IEEE Electron Devices Magazine · doi:10.1109/med.2023.3337129 · Cited by 25 · see citing works
- Authors
- Meiling, H., Meijer, H., Banine, V., Moors, R., Groeneveld, R., Voorma, H.-J., Mickan, U., Wolschrijn, B., Mertens, B., van Baars, G., Kürz, P., & Harned, N.
- Affiliations
- ASML (Netherlands) (NL)
- Netherlands Organisation for Applied Scientific Research (NL)
- Carl Zeiss (Germany) (DE)
- ASML (United States) (US)
- ORCID
- Banine, Vadim
- Venue
- SPIE Proceedings
- Publisher
- SPIE
- Published
- 2006-03-10
- Volume
- 6151
- Pages
- 615108
- ISSN
- 0277-786X (ISSN-L)
- OpenAlex
- W2056685113
- Cited by
- 79
- References
- 7
- Citations by year
- 2026: 2 · 2025: 3 · 2024: 3 · 2023: 4 · 2022: 1 · 2019: 3 · 2018: 2 · 2017: 1 · 2016: 1 · 2015: 2 · 2014: 2 · 2013: 2 · 2012: 2
- FWCI
- 22.77
- Type
- conference paper
- Language
- en
- Open access
- closed
- Locations
- Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (publishedVersion)
- Funders
- Bundesministerium für Bildung und Forschung
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Photolithography Techniques
- Physical Sciences › Physics and Astronomy › Radiation › Advanced X-ray Imaging Techniques
- Physical Sciences › Engineering › Biomedical Engineering › Advanced optical system design
- Keywords
- EUV lithography, total cost of ownership
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Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
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