Exposure Tool Development Toward Advanced EUV Lithography: A Journey of 40 Years Driving Moore’s Law
Abstract
In modern high-end integrated circuits (ICs) one can find billions of active elements. These ICs fuel devices like mobile phones, complex graphical engines, servers, and high-end supercomputers. This would not be possible without optical lithography, allowing for a continuous shrink in the dimensions of the individual active elements. Many technological developments over the last decades have enabled this. The continuously increasing number of elements over time is calledMoore’s law. The resolution itself is defined by the lithography tools. Over the years, the resolution of these tools has improved from several micrometers in the early 1970s to 13 nm in state-of-the-art extreme ultraviolet (EUV) tools [λ= 13.5 nm, numerical aperture (NA) = 0.33] and will improve even further down to 8 nm in what are calledhigh-NA EUV exposure tools(NA = 0.55). There is an outlook toward exposure tools allowing for even smaller resolutions in the next decade.
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Energy from electrons dissipates through inelastic collisions, producing a broad distribution of low-energy secondary electrons capable of inducing chemical changes in the resist.
“The energy from the electrons is dissipated through multiple inelastic collisions, resulting in a broad distribution of lower-energy secondary electrons (LEEs) capable of inducing further chemical changes within the resist [12].”
From Recent Advances in Metal-Oxide-Based Photoresists for EUV Lithography (2024) · cites this paper as [12]
The transition from a deep ultraviolet wavelength of 193 nm to extreme ultraviolet lithography with a wavelength of 13.5 nm culminated from an adaptation cycle that served the industry for high-volume manufacturing.
“This adaptation cycle has served the industry well for high -volume manufacturing (HVM), cu lminating in the transition from a deep ultraviolet (DUV) wavelength of 193 nm to extreme ultraviolet (EUV) lithography, with a wavelength of 13.5 nm 6 .”
From Extreme ultraviolet lithography (2024) · cites this paper as [6]
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Extreme ultraviolet lithography
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“The energy from the electrons is dissipated through multiple inelastic collisions, resulting in a broad distribution of lower-energy secondary electrons (LEEs) capable of inducing further chemical changes within the resist [12].”
BackgroundRonse, K. (2024) · IEEE Electron Devices Magazine · doi:10.1109/med.2023.3336276 · Cited by 14 · see citing works
- Authors
- Schoot, J. V.
- Affiliations
- ASML (Netherlands) (NL)
- Corresponding author
- Schoot, Jan van
- ORCID
- Schoot, Jan van
- Venue
- IEEE Electron Devices Magazine
- Published
- 2024-03
- Volume
- 2
- Issue
- 1
- Pages
- 8-22
- ISSN
- 2832-7683 (ISSN-L)
- 2832-7691
- OpenAlex
- W4393238510
- Cited by
- 25
- References
- 24
- Citations by year
- 2026: 6 · 2025: 13 · 2024: 6
- FWCI
- 2.59
- Type
- journal article
- Language
- en
- Open access
- closed
- Licence
- Locations
- IEEE Electron Devices Magazine (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Photolithography Techniques
- Physical Sciences › Engineering › Biomedical Engineering › Advanced optical system design
- Physical Sciences › Physics and Astronomy › Radiation › Advanced X-ray Imaging Techniques
- Keywords
- EUV lithography, exposure tools, Moore's law, photolithography, integrated circuit fabrication, resolution scaling, numerical aperture, extreme ultraviolet radiation
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