Effect of deprotection activation energy on lithographic performance of EUVL resist
Abstract
As the feature size becomes smaller, it is difficult for the lithography progress to keep pace with the acceleration of design rule shrinkage and high integration of memory device. Extreme Ultra Violet Lithography (EUVL) is a preferred solution for the 32nm node. In this paper, we have synthesized two types of polymers. One is based on hydroxy phenol, the other is based on hydrocarbon acrylate type polymer. We have diversified each polymer type according to different activation energies for deprotection reaction. In this experiment, we have observed on the resist lithographic performance such as resolution, LER (Line Edge Roughness), photo-sensitivity, and out-gassing during exposure. Different properties according to activation energy were well explained by acid diffusion and polymer free-volume.
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The HAdMA repeat-unit in terpolymer 4 does not undergo acid catalysed elimination during the post exposure bake step because elimination is prevented through the inability to form an anti-Bredt bridgehead double bond system under these conditions.
“Considering the HAdMA (2) repeat-unit in terpolymer 4 does not undergo acid catalysed elimination during the post exposure bake step, because elimination is prevented through the inability to form an anti-Bredt bridgehead double bond system under these conditions,30”
From PFAS free chemically amplified resists enabled by low activation energy hydrocarbon cage monomers (2026) · cites this paper as [30]
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Advances in Resist Materials and Processing Technology Xxiv
Lin, Q. (2007) · Cited by 11 · see citing works
Wet Clean Induce Pattern Collapse Mechanism Study
Yang, C., Ko, C. C., Yang, H. O., et al. (2012) · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · doi:10.4028/www.scientific.net/ssp.187.253 · Cited by 9 · see citing works
Mechanisms of EUV exposure : photons, electrons and holes
Narasimhan, A. K. (2017) · doi:10.54014/ndf6-kt71 · Cited by 1 · see citing works
PFAS free chemically amplified resists enabled by low activation energy hydrocarbon cage monomers
Liu, Y., Summersgill, M. D., Cheng, H.-H., Chow, S., Im, E., Du, Y., Xing, H., Houston, S. D., Nielsen, B., Whittaker, A. K., et al. (2026) · Chemical Science · doi:10.1039/d6sc03643k
“…information in the literature on comparative low-E a CAR photoresist performance arising from cage hydrocarbons other than ada-mantane is scarce, 29 which inspired herein an evaluation of various hydrocarbon cage sizes with the aim of removing PFAS-PAGs from the lithographic process i.e.…”
- Authors
- Kim, S.-J., Yu, G.-J., Lee, J.-Y., Kim, H.-J., Lee, J.-W., Kim, D.-B., Kang, Y., & Kim, J.
- Affiliations
- Samsung Electronics (South Korea) (KR)
- Venue
- SPIE Proceedings
- Publisher
- SPIE
- Published
- 2007-03-16
- Volume
- 6519
- Pages
- 651947
- ISSN
- 0277-786X (ISSN-L)
- OpenAlex
- W1999617173
- Cited by
- 4
- References
- 0
- Citations by year
- 2026: 1 · 2017: 1 · 2012: 1
- FWCI
- 0.50
- Type
- conference paper
- Language
- en
- Open access
- closed
- Locations
- Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (publishedVersion)
- Funders
- Lawrence Berkeley National Laboratory
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Photolithography Techniques
- Physical Sciences › Chemistry › Organic Chemistry › Photopolymerization techniques and applications
- Physical Sciences › Materials Science › Polymers and Plastics › Synthesis and properties of polymers
- Keywords
- EUV resist, EUV lithography, polyacrylate, resist resolution, line edge roughness, photosensitivity, outgassing, acid diffusion
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