Cited by 69Advancements in Photolithography TechniquesAdvanced X-ray Imaging TechniquesNanofabrication and Lithography Techniques

Extreme ultraviolet lithography reaches 5 nm resolution

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Giannopoulos, Iason, Mochi, Iacopo, Vockenhuber, Michaela, Ekinci, Yasin, Kazazis, Dimitrios·2024·Nanoscale

Abstract

Our mirror-based lithographic technique achieves 5 nm half-pitch patterning with EUV light. This breakthrough pushes EUV lithography boundaries beyond the high-NA specifications and serves as a benchmarking platform for novel photoresists.

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Crossref · 10.1039/d4nr01332h

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  • 5 nm resolution was demonstrated using a mirror-based interference lithography set-up.

    “More recently, 5 nm resolution was demonstrated using a mirror-based interference lithography set-up 54 .”

    From Extreme ultraviolet lithography (2024) · cites this paper as [54]

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Cited by

Sorted by citations

Authors
Giannopoulos, I., Mochi, I., Vockenhuber, M., Ekinci, Y., & Kazazis, D.
Affiliations
Paul Scherrer Institute (CH)
Corresponding author
  • Giannopoulos, Iason
  • Kazazis, Dimitrios
Venue
Nanoscale
Published
2024
Volume
16
Issue
33
Pages
15533-15543
ISSN
  • 2040-3364 (ISSN-L)
  • 2040-3372
OpenAlex
W4401516118
Cited by
69
References
46
Citations by year
2026: 36 · 2025: 31 · 2024: 2
FWCI
7.15
Type
journal article
Language
en
Open access
Locations
  • Nanoscale (publishedVersion, cc-by-nc)
  • PubMed (publishedVersion)
  • arXiv (Cornell University) (submittedVersion, cc-by)
  • DORA PSI (Paul Scherrer Institute) (submittedVersion, cc-by-nc)
  • Figshare (submittedVersion, cc-by)
  • arXiv (Cornell University) (cc-by)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Photolithography Techniques
  • Physical Sciences › Physics and Astronomy › Radiation › Advanced X-ray Imaging Techniques
  • Physical Sciences › Engineering › Biomedical Engineering › Nanofabrication and Lithography Techniques
Keywords
EUV lithography, line/space patterning, diffraction efficiency, sub-10 nm patterning, EUV resist

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