Extreme ultraviolet lithography reaches 5 nm resolution
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Our mirror-based lithographic technique achieves 5 nm half-pitch patterning with EUV light. This breakthrough pushes EUV lithography boundaries beyond the high-NA specifications and serves as a benchmarking platform for novel photoresists.
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5 nm resolution was demonstrated using a mirror-based interference lithography set-up.
“More recently, 5 nm resolution was demonstrated using a mirror-based interference lithography set-up 54 .”
From Extreme ultraviolet lithography (2024) · cites this paper as [54]
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Sorted by citations
Extreme ultraviolet lithography
Kazazis, D., Santaclara, J. G., van Schoot, J., Mochi, I., & Ekinci, Y. (2024) · Nature Reviews Methods Primers · doi:10.1038/s43586-024-00361-z · Cited by 149 · see citing works
Self-citation
- Authors
- Giannopoulos, I., Mochi, I., Vockenhuber, M., Ekinci, Y., & Kazazis, D.
- Affiliations
- Paul Scherrer Institute (CH)
- Corresponding author
- Giannopoulos, Iason
- Kazazis, Dimitrios
- Venue
- Nanoscale
- Publisher
- Royal Society of Chemistry (RSC)
- Published
- 2024
- Volume
- 16
- Issue
- 33
- Pages
- 15533-15543
- ISSN
- 2040-3364 (ISSN-L)
- 2040-3372
- OpenAlex
- W4401516118
- Cited by
- 69
- References
- 46
- Citations by year
- 2026: 36 · 2025: 31 · 2024: 2
- FWCI
- 7.15
- Type
- journal article
- Language
- en
- Open access
- hybrid
- doi.org
- Licence
- Locations
- Nanoscale (publishedVersion, cc-by-nc)
- PubMed (publishedVersion)
- arXiv (Cornell University) (submittedVersion, cc-by)
- DORA PSI (Paul Scherrer Institute) (submittedVersion, cc-by-nc)
- Figshare (submittedVersion, cc-by)
- arXiv (Cornell University) (cc-by)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Photolithography Techniques
- Physical Sciences › Physics and Astronomy › Radiation › Advanced X-ray Imaging Techniques
- Physical Sciences › Engineering › Biomedical Engineering › Nanofabrication and Lithography Techniques
- Keywords
- EUV lithography, line/space patterning, diffraction efficiency, sub-10 nm patterning, EUV resist
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