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LPP source system development for HVM
Abstract
Laser produced plasma (LPP) systems have been developed as a viable approach for the EUV scanner light sources to support optical imaging of circuit features at sub-22nm nodes on the ITRS roadmap. This paper provides a review of development progress and productization status for LPP extreme-ultra-violet (EUV) sources with performance goals targeted to meet specific requirements from leading scanner manufacturers. The status of first generation High Volume Manufacturing (HVM) sources in production and at a leading semiconductor device manufacturer is discussed. The EUV power at intermediate focus is discussed and the lastest data are presented. An electricity consumption model is described, and our current product roadmap is shown.
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In the citing paper
“Throughput considerations, safety concerns against the use of beryllium multilayers, coupled with the development of EUV sources at 13.5 nm with tin as a droplet target element, finally set the optimal EUV wavelength at 13.5 nm 19 .”
From Extreme ultraviolet lithography (2024) · cites this paper as [19]
In the citing paper
“EUV scanners use laserproduced plasma sources. These sources generate EUV radiation in a broad range of wavelengths around 13.5 nm by focusing a laser beam on tin droplets, resulting in a highly ionized plasma.”
From Extreme ultraviolet lithography (2024) · cites this paper as [19]
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Extreme ultraviolet lithography
Kazazis, D., Santaclara, J. G., van Schoot, J., Mochi, I., & Ekinci, Y. (2024) · Nature Reviews Methods Primers · doi:10.1038/s43586-024-00361-z · Cited by 149
“The EUV photons are then collected with a multilayer-coated mirror — called a collector — and transmitted to the illuminator 19 .”
Performance optimization of MOPA pre-pulse LPP light source
Schafgans, A. A., Brown, D. J. W., Fomenkov, I. V., Sandstrom, R., Ershov, A. I., Vaschenko, G., Rafac, R., Purvis, M. A., Rokitski, S. I., Tao, Y., et al. (2015) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.2087421 · Cited by 47
Self-citationTomie, T. (2012) · Journal of Micro/Nanopatterning Materials and Metrology · doi:10.1117/1.jmm.11.2.021109 · Cited by 40
“5 kW.(5) Then the EUV power at the source is calculated to be 17.”
BackgroundMethodInfluentialLPP EUV source readiness for NXE 3300B
Brandt, D. C., Fomenkov, I. V., Farrar, N. R., et al. (2014) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.2048184 · Cited by 25
Self-citationDevelopment of stable extreme-ultraviolet sources for use in lithography exposure systems
Fomenkov, I. V., Fontaine, B. L., Brown, D. J. W., et al. (2012) · Journal of Micro/Nanopatterning Materials and Metrology · doi:10.1117/1.jmm.11.2.021110 · Cited by 23
Self-citationNowak, K. M., Ohta, T., Suganuma, T., et al. (2013) · Optics Letters · doi:10.1364/ol.38.000881 · Cited by 18
Recent progress in source development for extreme UV lithography
O’Sullivan, G., Kilbane, D., & D'Arcy, R. (2012) · Journal of Modern Optics · doi:10.1080/09500340.2012.678399 · Cited by 17
Gradient-based inverse extreme ultraviolet lithography
Ma, X., Wang, J., Chen, X., et al. (2015) · Applied Optics · doi:10.1364/ao.54.007284 · Cited by 17
Schriever, G., Semprez, O., Jonkers, J., et al. (2012) · Journal of Micro/Nanopatterning Materials and Metrology · doi:10.1117/1.jmm.11.2.021104 · Cited by 16
Tanino, Y., Nishimae, J., Yamamoto, T., et al. (2013) · Optics Letters · doi:10.1364/ol.38.003291 · Cited by 8
Mask roughness challenges in extreme ultraviolet mask development
Naulleau, P. P., McClinton, B. M., Goldberg, K. A., et al. (2011) · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · doi:10.1116/1.3632989 · Cited by 6
“Although availability of a reliable high power source [2-4] is arguably the most daunting of these challenges, several mask issues are also of major concern.”
BackgroundEMI noise reduction in an integrated 6 kHz solid state pulsed power system
Chen, H., Yakimow, B., & Melcher, P. R. (2012) · IEEE International Power Modulator and High Voltage Conference · doi:10.1109/ipmhvc.2012.6518846
Microwave discharge plasma production with resonant cavity for EUV mask inspection tool
TASHIMA, S., Ohnishi, M., Hugrass, W. N., et al. (2015) · Japanese Journal of Applied Physics · doi:10.7567/jjap.54.126701
Research status of discharge-produced plasma EUV light sources
Jia, H., Zhang, J., & Zou, X. (2026) · Pulsed Power · doi:10.1016/j.pup.2026.100024
Metadata
- Authors
- Brandt, D. C., Fomenkov, I. V., Ershov, A. I., Partlo, W. N., Myers, D. W., Sandstrom, R. L., La Fontaine, B. M., Lercel, M. J., Bykanov, A. N., Böwering, N. R., Vaschenko, G. O., Khodykin, O. V., Srivastava, S. N., Ahmad, I., Rajyaguru, C., Das, P., Fleurov, V. B., Zhang, K., Golich, D. J., De Dea, S., Hou, R. R., Dunstan, W. J., Wittak, C. J., Baumgart, P., Ishihara, T., Simmons, R. D., Jacques, R. N., & Bergstedt, R. A.
- Venue
- SPIE Proceedings
- Publisher
- SPIE
- Published
- 2011-03-17
- Volume
- 7969
- Pages
- 79691H
- ISSN
- 0277-786X (ISSN-L)
- OpenAlex
- W4256373098
- Cited by
- 14
- References
- 0
- Citations by year
- 2026: 1 · 2024: 1 · 2015: 3 · 2014: 1 · 2013: 2 · 2012: 5
- FWCI
- 3.91
- Type
- conference paper
- Language
- en
- Open access
- closed
- Locations
- Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Photolithography Techniques
- Physical Sciences › Physics and Astronomy › Radiation › Advanced X-ray Imaging Techniques
- Physical Sciences › Physics and Astronomy › Nuclear and High Energy Physics › Laser-Plasma Interactions and Diagnostics
- Keywords
- laser-produced plasma, EUV light source, extreme ultraviolet radiation, high-volume manufacturing, EUV scanner, photolithography, power consumption model, product roadmap
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