The DOI matches its Crossref record.
LPP source system development for HVM
Abstract
Laser produced plasma (LPP) systems have been developed as a viable approach for the EUV scanner light sources to support optical imaging of circuit features at sub-22nm nodes on the ITRS roadmap. This paper provides a review of development progress and productization status for LPP extreme-ultra-violet (EUV) sources with performance goals targeted to meet specific requirements from leading scanner manufacturers. The status of first generation High Volume Manufacturing (HVM) sources in production and at a leading semiconductor device manufacturer is discussed. The EUV power at intermediate focus is discussed and the lastest data are presented. An electricity consumption model is described, and our current product roadmap is shown.
Overview
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
Claims other papers make about this one
Each is checked against this paper’s own text: does it say what the citing paper says it does?
In the citing paper
“Throughput considerations, safety concerns against the use of beryllium multilayers, coupled with the development of EUV sources at 13.5 nm with tin as a droplet target element, finally set the optimal EUV wavelength at 13.5 nm 19 .”
From Extreme ultraviolet lithography (2024) · cites this paper as [19]
In the citing paper
“EUV scanners use laserproduced plasma sources. These sources generate EUV radiation in a broad range of wavelengths around 13.5 nm by focusing a laser beam on tin droplets, resulting in a highly ionized plasma.”
From Extreme ultraviolet lithography (2024) · cites this paper as [19]
Citations
Cited by
Sorted by citations
Extreme ultraviolet lithography
Kazazis, D., Santaclara, J. G., van Schoot, J., Mochi, I., & Ekinci, Y. (2024) · Nature Reviews Methods Primers · doi:10.1038/s43586-024-00361-z · Cited by 149
“The EUV photons are then collected with a multilayer-coated mirror — called a collector — and transmitted to the illuminator 19 .”
Performance optimization of MOPA pre-pulse LPP light source
Schafgans, A. A., Brown, D. J. W., Fomenkov, I. V., Sandstrom, R., Ershov, A. I., Vaschenko, G., Rafac, R., Purvis, M. A., Rokitski, S. I., Tao, Y., et al. (2015) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.2087421 · Cited by 47
Self-citationTomie, T. (2012) · Journal of Micro/Nanopatterning Materials and Metrology · doi:10.1117/1.jmm.11.2.021109 · Cited by 40
“5 kW.(5) Then the EUV power at the source is calculated to be 17.”
BackgroundMethodInfluentialLPP EUV source readiness for NXE 3300B
Brandt, D. C., Fomenkov, I. V., Farrar, N. R., et al. (2014) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.2048184 · Cited by 25
Self-citationDevelopment of stable extreme-ultraviolet sources for use in lithography exposure systems
Fomenkov, I. V., Fontaine, B. L., Brown, D. J. W., et al. (2012) · Journal of Micro/Nanopatterning Materials and Metrology · doi:10.1117/1.jmm.11.2.021110 · Cited by 23
Self-citation
Metadata
- Authors
- Brandt, D. C., Fomenkov, I. V., Ershov, A. I., Partlo, W. N., Myers, D. W., Sandstrom, R. L., La Fontaine, B. M., Lercel, M. J., Bykanov, A. N., Böwering, N. R., Vaschenko, G. O., Khodykin, O. V., Srivastava, S. N., Ahmad, I., Rajyaguru, C., Das, P., Fleurov, V. B., Zhang, K., Golich, D. J., De Dea, S., Hou, R. R., Dunstan, W. J., Wittak, C. J., Baumgart, P., Ishihara, T., Simmons, R. D., Jacques, R. N., & Bergstedt, R. A.
- Venue
- SPIE Proceedings
- Publisher
- SPIE
- Published
- 2011-03-17
- Volume
- 7969
- Pages
- 79691H
- ISSN
- 0277-786X (ISSN-L)
- OpenAlex
- W4256373098
- Cited by
- 14
- References
- 0
- Citations by year
- 2026: 1 · 2024: 1 · 2015: 3 · 2014: 1 · 2013: 2 · 2012: 5
- FWCI
- 3.91
- Type
- conference paper
- Language
- en
- Open access
- closed
- Locations
- Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Photolithography Techniques
- Physical Sciences › Physics and Astronomy › Radiation › Advanced X-ray Imaging Techniques
- Physical Sciences › Physics and Astronomy › Nuclear and High Energy Physics › Laser-Plasma Interactions and Diagnostics
- Keywords
- laser-produced plasma, EUV light source, extreme ultraviolet radiation, high-volume manufacturing, EUV scanner, photolithography, power consumption model, product roadmap
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
