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Imprint Lithography with 25-Nanometer Resolution

Chou, Stephen Y., Krauss, Peter R., Renstrom, Preston J.·1996·Science

Abstract

A high-throughput lithographic method with 25-nanometer resolution and smooth vertical sidewalls is proposed and demonstrated. The technique uses compression molding to create a thickness contrast pattern in a thin resist film carried on a substrate, followed by anisotropic etching to transfer the pattern through the entire resist thickness. Metal patterns with a feature size of 25 nanometers and a period of 70 nanometers were fabricated with the use of resist templates created by imprint lithography in combination with a lift-off process. With further development, imprint lithography should allow fabrication of sub-10-nanometer structures and may become a commercially viable technique for manufacturing integrated circuits and other nanodevices.

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Metadata

Authors
Chou, S. Y., Krauss, P. R., & Renstrom, P. J.
Venue
Science
Published
1996-04-05
Volume
272
Issue
5258
Pages
85-87
ISSN
  • 0036-8075 (ISSN-L)
  • 1095-9203
OpenAlex
W2062047511
Cited by
2,277
References
0
FWCI
32.08
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Imprint Lithography with 25-Nanometer Resolution. https://app.cochat.ai/papers/10.1126/science.272.5258.85
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Chou, S. Y., Krauss, P. R., & Renstrom, P. J. (1996). Imprint Lithography with 25-Nanometer Resolution. Science. https://doi.org/10.1126/science.272.5258.85

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