The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.
Scaling carbon nanotube complementary transistors to 5-nm gate lengths
Abstract
Moving transistors downscale: One option for extending the performance of complementary metal-oxide semiconductor (CMOS) devices based on silicon technology is to use semiconducting carbon nanotubes as the gates. Qiu et al. fabricated top-gated carbon nanotube field-effect transistors with a gate length of 5 nm. Thin graphene contacts helped maintain electrostatic control. A scaling trend study revealed that, compared with silicon CMOS devices, the nanotube-based devices operated much faster and at much lower supply voltage, and they approached the limit of one electron per switching operation. Science , this issue p. 271
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Cites
The chips are down for Moore’s law
Waldrop, M. M. (2016) · Nature · doi:10.1038/530144a · Cited by 2,397
High-field electrical transport in single-wall carbon nanotubes
Yao, Z., Kane, C. L., & Dekker, C. (2000) · Physical Review Letters · doi:10.1103/physrevlett.84.2941 · Cited by 1,501
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Self-citationRao, R., Pint, C. L., Islam, A. E., Weatherup, R. S., Hofmann, S., Meshot, E. R., Wu, F., Zhou, C., Dee, N., Amama, P. B., et al. (2018) · ACS Nano · doi:10.1021/acsnano.8b06511 · Cited by 588
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Metadata
- Authors
- Qiu, C., Zhang, Z., Xiao, M., Yang, Y., Zhong, D., & Peng, L.-M.
- Venue
- Science
- Published
- 2017-01-20
- Volume
- 355
- Issue
- 6322
- Pages
- 271-276
- ISSN
- 0036-8075 (ISSN-L)
- 1095-9203
- OpenAlex
- W2574149780
- Cited by
- 739
- References
- 2
- FWCI
- 32.56
- Type
- journal article
- Language
- en
- Open access
- closed
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- Qiu, C., Zhang, Z., Xiao, M., Yang, Y., Zhong, D., & Peng, L.-M. (2017). Scaling carbon nanotube complementary transistors to 5-nm gate lengths. Science. https://doi.org/10.1126/science.aaj1628
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