Cited by 106Topological Materials and Phenomena2D Materials and ApplicationsAdvanced Semiconductor Detectors and Materials

Band Structure of SnTe Studied by Photoemission Spectroscopy

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Littlewood, P. B., Mihaila, B., Schulze, R. K., Safarik, D. J., Gubernatis, J. E., Bostwick, A., Rotenberg, E., Opeil, C. P. +3 more·2010·Physical Review Letters

Abstract

We present an angle-resolved photoemission spectroscopy study of the electronic structure of SnTe and compare the experimental results to ab initio band structure calculations as well as a simplified tight-binding model of the p bands. Our study reveals the conjectured complex Fermi surface structure near the L points showing topological changes in the bands from disconnected pockets, to open tubes, and then to cuboids as the binding energy increases, resolving lingering issues about the electronic structure. The chemical potential at the crystal surface is found to be 0.5 eV below the gap, corresponding to a carrier density of p=1.14 × 10(21) cm(-3) or 7.2 × 10(-2) holes per unit cell. At a temperature below the cubic-rhombohedral structural transition a small shift in spectral energy of the valance band is found, in agreement with model predictions.

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Authors
Littlewood, P. B., Mihaila, B., Schulze, R. K., Safarik, D. J., Gubernatis, J. E., Bostwick, A., Rotenberg, E., Opeil, C. P., Durakiewicz, T., Smith, J. L., & Lashley, J. C.
Affiliations
  • University of Cambridge (GB)
  • Los Alamos National Laboratory (US)
  • Lawrence Berkeley National Laboratory (US)
  • Boston College (US)
Venue
Physical Review Letters
Published
2010-08-20
Volume
105
Issue
8
Pages
086404-086404
ISSN
  • 0031-9007 (ISSN-L)
  • 1079-7114
OpenAlex
W2031045756
Cited by
106
References
12
Citations by year
2026: 4 · 2025: 4 · 2024: 2 · 2023: 5 · 2022: 2 · 2021: 10 · 2020: 4 · 2019: 12 · 2018: 12 · 2017: 8 · 2016: 6 · 2015: 6 · 2014: 12 · 2013: 11 · 2012: 5
FWCI
3.25
Type
journal article
Language
en
Open access
Locations
  • Physical Review Letters (publishedVersion)
  • PubMed (publishedVersion)
  • arXiv (Cornell University) (submittedVersion)
  • arXiv (Cornell University)
Topics
  • Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Topological Materials and Phenomena
  • Physical Sciences › Materials Science › Materials Chemistry › 2D Materials and Applications
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Semiconductor Detectors and Materials
Keywords
SnTe, electronic band structure, Fermi surface, L point, P-band, tight-binding model, chemical potential, carrier concentration, valence band, angle-resolved photoemission

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