Band Structure of SnTe Studied by Photoemission Spectroscopy
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We present an angle-resolved photoemission spectroscopy study of the electronic structure of SnTe and compare the experimental results to ab initio band structure calculations as well as a simplified tight-binding model of the p bands. Our study reveals the conjectured complex Fermi surface structure near the L points showing topological changes in the bands from disconnected pockets, to open tubes, and then to cuboids as the binding energy increases, resolving lingering issues about the electronic structure. The chemical potential at the crystal surface is found to be 0.5 eV below the gap, corresponding to a carrier density of p=1.14 × 10(21) cm(-3) or 7.2 × 10(-2) holes per unit cell. At a temperature below the cubic-rhombohedral structural transition a small shift in spectral energy of the valance band is found, in agreement with model predictions.
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Because SnTe's chemical potential lies below the valence band maximum, surface states within the gap are unoccupied and cannot be studied by photoemission.
“The surface states, which may exist within the band gap, are thus unoccupied and cannot be experimentally studied by photoemission experiments 18 .”
From Observation of a topological crystalline insulator phase and topological phase transition in Pb1−xSnxTe (2012) · cites this paper as [18]
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Generalized Gradient Approximation Made Simple
Perdew, J. P., Burke, K., & Ernzerhof, M. (1996) · Physical Review Letters · doi:10.1103/physrevlett.77.3865 · Cited by 215,824 · see citing works
Resonant bonding in crystalline phase-change materials
Shportko, K. V., Kremers, S., Woda, M., Lencer, D., Robertson, J., & Wuttig, M. (2008) · Nature Materials · doi:10.1038/nmat2226 · Cited by 1,153 · see citing works
Relativistic Band Structure and Electronic Properties of SnTe, GeTe, and PbTe
Tung, Y., & Cohen, M. L. (1969) · Physical Review · doi:10.1103/physrev.180.823 · Cited by 250 · see citing works
The crystal dynamics of lead telluride
Cochran, W., Cowley, R. A., Dolling, G., & Elcombe, M. M. (1966) · Proceedings of the Royal Society of London A Mathematical and Physical Sciences · doi:10.1098/rspa.1966.0182 · Cited by 221 · see citing works
The crystal structure of IV-VI compounds. I. Classification and description
Littlewood, P. B. (1980) · Journal of Physics C Solid State Physics · doi:10.1088/0022-3719/13/26/009 · Cited by 208 · see citing works
Self-citationSnTe Nanocrystals: A New Example of Narrow-Gap Semiconductor Quantum Dots
Kovalenko, M. V., Heiß, W., Shevchenko, E. V., Lee, J., Schwinghammer, H., Alivisatos, A. P., & Talapin, D. V. (2007) · Journal of the American Chemical Society · doi:10.1021/ja074481z · Cited by 169 · see citing works
Phase Transition in SnTe with Low Carrier Concentration
Iizumi, M., Hamaguchi, Y., F. Komatsubara, K., & Kato, Y. (1975) · Journal of the Physical Society of Japan · doi:10.1143/jpsj.38.443 · Cited by 165 · see citing works
The crystal structure of IV-VI compounds. II. A microscopic model for cubic/rhombohedral materials
Littlewood, P. B. (1980) · Journal of Physics C Solid State Physics · doi:10.1088/0022-3719/13/26/010 · Cited by 70 · see citing works
Self-citationWeak-Field Magnetoresistance and the Valence-Band Structure of SnTe
Allgaier, R. S., & Houston, B. (1972) · Physical review. B, Solid state · doi:10.1103/physrevb.5.2186 · Cited by 68 · see citing works
Shubnikov-de Haas Effect in SnTe
Burke, J. R., Allgaier, R. S., Houston, B. B., Babiskin, J., & Siebenmann, P. G. (1965) · Physical Review Letters · doi:10.1103/physrevlett.14.360 · Cited by 62 · see citing works
Self-consistent relativistic energy bands for tin telluride
Melvin, J. S., & Hendry, D. C. (1979) · Journal of Physics C Solid State Physics · doi:10.1088/0022-3719/12/15/009 · Cited by 40 · see citing works
The infrared effective charge in IV-VI compounds. II. A three dimensional calculation
Littlewood, P. B. (1979) · Journal of Physics C Solid State Physics · doi:10.1088/0022-3719/12/21/012 · Cited by 29 · see citing works
Self-citation
Flagged first, then by citations
Cited by
Sorted by citations
<i>Colloquium</i> : Topological band theory
Bansil, A., Lin, H., & Das, T. (2016) · Reviews of Modern Physics · doi:10.1103/revmodphys.88.021004 · Cited by 1,587 · see citing works
Experimental realization of a topological crystalline insulator in SnTe
Tanaka, Y., Ren, Z., Sato, T., Nakayama, K., Souma, S., Takahashi, T., Segawa, K., & Ando, Y. (2012) · Nature Physics · doi:10.1038/nphys2442 · Cited by 997 · see citing works
Topological crystalline insulator states in Pb1−xSnxSe
Dziawa, P., Kowalski, B. J., Dybko, K., Buczko, R., Szczerbakow, A., Szot, M., Łusakowska, E., Balasubramanian, T., Wojek, B. M., Berntsen, M. H., et al. (2012) · Nature Materials · doi:10.1038/nmat3449 · Cited by 820 · see citing works
Tan, G., Zhao, L., Shi, F., Doak, J. W., Lo, S., Sun, H. Y., Wolverton, C. M., Dravid, V. P., Uher, C., & Kanatzidis, M. G. (2014) · Journal of the American Chemical Society · doi:10.1021/ja500860m · Cited by 703 · see citing works
Xu, S.-Y., Liu, C., Alidoust, N., Neupane, M., Qian, D., Belopolski, I., Denlinger, J. D., Wang, Y. J., Lin, H., Wray, L. A., et al. (2012) · Nature Communications · doi:10.1038/ncomms2191 · Cited by 691 · see citing works
Eco‐Friendly SnTe Thermoelectric Materials: Progress and Future Challenges
Moshwan, R., Yang, L., Zou, J., & Chen, Z. (2017) · Advanced Functional Materials · doi:10.1002/adfm.201703278 · Cited by 425 · see citing works
Large-Chern-Number Quantum Anomalous Hall Effect in Thin-Film Topological Crystalline Insulators
Fang, C., Gilbert, M. J., & Bernevig, B. A. (2014) · Physical Review Letters · doi:10.1103/physrevlett.112.046801 · Cited by 221 · see citing works
High Three-Dimensional Thermoelectric Performance from Low-Dimensional Bands
Parker, D., Chen, X., & Singh, D. J. (2013) · Physical Review Letters · doi:10.1103/physrevlett.110.146601 · Cited by 158 · see citing works
Tanaka, Y., Sato, T., Nakayama, K., Souma, S., Takahashi, T., Ren, Z., Novak, M., Segawa, K., & Ando, Y. (2013) · Physical Review B · doi:10.1103/physrevb.87.155105 · Cited by 151 · see citing works
Wang, N., West, D. J., Liu, J., Li, J. Z., Yan, Q., Gu, B.-L., Zhang, S., & Duan, W. (2014) · Physical Review B · doi:10.1103/physrevb.89.045142 · Cited by 122 · see citing works
Cagnoni, M., Führen, D., & Wuttig, M. (2018) · Advanced Materials · doi:10.1002/adma.201801787 · Cited by 119 · see citing works
Tanaka, Y., 正満, 拓., Nakayama, K., Souma, S., Sato, T., Takahashi, T., Novak, M., Segawa, K., & Ando, Y. (2013) · Physical Review B · doi:10.1103/physrevb.88.235126 · Cited by 115 · see citing works
Band engineering and improved thermoelectric performance in M-doped SnTe (M = Mg, Mn, Cd, and Hg)
Tan, X. J., Shao, H., He, J., Liu, G. Q., Xu, J., Jiang, J., & Jiang, H. (2016) · Physical Chemistry Chemical Physics · doi:10.1039/c5cp07620j · Cited by 111 · see citing works
Sato, T., Tanaka, Y., Nakayama, K., Souma, S., Takahashi, T., Sasaki, S., Ren, Z., Taskin, A. A., Segawa, K., & Ando, Y. (2013) · Physical Review Letters · doi:10.1103/physrevlett.110.206804 · Cited by 88 · see citing works
Orbital Hall effect in crystals: Interatomic versus intra-atomic contributions
Pezo, A., Ovalle, D. G., & Manchon, A. (2022) · Physical review. B./Physical review. B · doi:10.1103/physrevb.106.104414 · Cited by 90 · see citing works
Optical properties of PbTe and PbSe
Ekuma, C. E., Singh, D. J., Moreno, J., & Jarrell, M. (2012) · Physical Review B · doi:10.1103/physrevb.85.085205 · Cited by 88 · see citing works
Quantum coherent transport in SnTe topological crystalline insulator thin films
Assaf, B. A., Katmis, F., Wei, P., Satpati, B., Zhang, Z., Bennett, S. P., Harris, V. G., Moodera, J. S., & Heiman, D. (2014) · Applied Physics Letters · doi:10.1063/1.4895456 · Cited by 84 · see citing works
Thermoelectric studies of IV–VI semiconductors for renewable energy resources
Khan, A. A., Khan, I., Ahmad, I., & Ali, Z. (2016) · Materials Science in Semiconductor Processing · doi:10.1016/j.mssp.2016.03.012 · Cited by 82 · see citing works
Ibáñez, M., Hasler, R., Genç, A., Liu, Y., Kuster, B., Schuster, M., Dobrozhan, O., Cadavid, D., Arbiol, J., Cabot, A., et al. (2019) · Journal of the American Chemical Society · doi:10.1021/jacs.9b01394 · Cited by 77 · see citing works
Zhang, H., Man, B., & Zhang, Q. (2017) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.7b01098 · Cited by 73 · see citing works
High-Performance PbTe Thermoelectric Films by Scalable and Low-Cost Printing
Han, C., Tan, G., Varghese, T. V., Kanatzidis, M. G., & Zhang, Y. (2018) · ACS Energy Letters · doi:10.1021/acsenergylett.8b00041 · Cited by 70 · see citing works
Qi, X., Huang, Y., Wu, D., Jiang, B., Zhu, B., Xu, X. C., Feng, J., Jia, B., Shu, Z., & He, J. (2020) · Journal of Materials Chemistry A · doi:10.1039/c9ta11180h · Cited by 65 · see citing works
Yashina, L. V., Eliseev, A. A., Kharlamova, M. V., Volykhov, A. A., Egorov, A. V., Savilov, S. V., Lukashin, A. V., Püttner, R., & Belogorokhov, A. I. (2011) · The Journal of Physical Chemistry C · doi:10.1021/jp1107087 · Cited by 54 · see citing works
Thermoelectric properties of p-type cubic and rhombohedral GeTe
Xing, G., Sun, J., Li, Y., Fan, X., Zheng, W., & Singh, D. J. (2018) · Journal of Applied Physics · doi:10.1063/1.5025070 · Cited by 54 · see citing works
Sines, I. T., Vaughn, D. D., Biacchi, A. J., Kingsley, C. E., Popczun, E. J., & Schaak, R. E. (2012) · Chemistry of Materials · doi:10.1021/cm301734b · Cited by 52 · see citing works
Nontrivial thermoelectric behavior in cubic SnSe driven by spin-orbit coupling
Wang, H., Mao, L., Tan, X., Liu, G., Xu, J., Shao, H., Hu, H., & Jiang, J. (2018) · Nano Energy · doi:10.1016/j.nanoen.2018.07.019 · Cited by 51 · see citing works
Shape-Controlled Narrow-Gap SnTe Nanostructures: From Nanocubes to Nanorods and Nanowires
Guo, S., Fidler, A. F., He, K., Su, D., Chen, G., Lin, Q., Pietryga, J. M., & Klimov, V. I. (2015) · Journal of the American Chemical Society · doi:10.1021/jacs.5b09490 · Cited by 47 · see citing works
Unraveling Convoluted Structural Transitions in SnTe at High Pressure
Zhou, D., Li, Q., Ma, Y., Cui, Q., & Chen, C. (2013) · The Journal of Physical Chemistry C · doi:10.1021/jp4008762 · Cited by 47 · see citing works
Batool, A., Saleem, M. I., Zhu, Y., Ma, X., & Cao, C. (2025) · Computational Materials Science · doi:10.1016/j.commatsci.2025.113907 · Cited by 46 · see citing works
Tin telluride: A weakly co-elastic metal
Salje, E. K. H., Safarik, D. J., Modic, K. A., Gubernatis, J. E., Cooley, J. C., Taylor, R. D., Mihaila, B., Saxena, A., Lookman, T., Smith, J. L., et al. (2010) · Physical Review B · doi:10.1103/physrevb.82.184112 · Cited by 46 · see citing works
Self-citationKaloni, T. P., Chang, K., Miller, B. J., Xue, Q., Chen, X., Ji, S., Parkin, S., & Barraza‐Lopez, S. (2019) · Physical review. B./Physical review. B · doi:10.1103/physrevb.99.134108 · Cited by 46 · see citing works
Enhancement of Thermoelectric Properties in Pd–In Co-Doped SnTe and Its Phase Transition Behavior
Ma, Z., Lei, J., Zhang, D., Wang, C., Wang, J., Cheng, Z., & Wang, Y. (2019) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.9b08564 · Cited by 46 · see citing works
Inelastic x-ray investigation of the ferroelectric transition in SnTe
O’Neill, C. D., Sokolov, D. A., Hermann, A., Bossak, A. A., Stock, C., & Huxley, A. (2017) · Physical review. B./Physical review. B · doi:10.1103/physrevb.95.144101 · Cited by 45 · see citing works
Pressure-Induced Superconductivity in SnTe: A First-Principles Study
Zhou, D., Li, Q., Ma, Y., Cui, Q., & Chen, C. (2013) · The Journal of Physical Chemistry C · doi:10.1021/jp4041138 · Cited by 40 · see citing works
Thermoelectric materials for space applications
Candolfi, C., Oualid, S. E., Ibrahim, D., Misra, S., Hamouli, O. E., Léon, A., Dauscher, A., Masschelein, P., Gall, P., Gougeon, P., et al. (2021) · CEAS Space Journal · doi:10.1007/s12567-021-00351-x · Cited by 38 · see citing works
Band structure engineering in Sn 1.03 Te through an In-induced resonant level
Misra, S., Wiendlocha, B., Toboła, J., Fesquet, F., Dauscher, A., Lenoir, B., & Candolfi, C. (2019) · Journal of Materials Chemistry C · doi:10.1039/c9tc04407h · Cited by 38 · see citing works
Shi, Y., Wu, M., Zhang, F., & Feng, J. (2014) · Physical Review B · doi:10.1103/physrevb.90.235114 · Cited by 33 · see citing works
Surface oxidation and thermoelectric properties of indium-doped tin telluride nanowires
Li, Z., Xu, E., Losovyj, Y. B., Li, N., Chen, A., Swartzentruber, B. S., Sinitsyn, N., Yoo, J., Jia, Q., & Zhang, S. (2017) · Nanoscale · doi:10.1039/c7nr04934j · Cited by 32 · see citing works
Stability of Pristine and Defective SnTe Surfaces from First Principles
Deringer, V. L., & Dronskowski, R. (2013) · ChemPhysChem · doi:10.1002/cphc.201300265 · Cited by 32 · see citing works
Effect of single metal doping on the thermoelectric properties of SnTe
Aminzare, M., Tseng, Y., Ramakrishnan, A., Chen, K.-H., & Mozharivskyj, Y. (2018) · Sustainable Energy & Fuels · doi:10.1039/c8se00385h · Cited by 31 · see citing works
Polley, C., Jovic, V., Su, T.-Y., Saghir, M., Newby, D., Kowalski, B. J., Jakieła, R., Barcz, A. J., Guziewicz, M., Balasubramanian, T., et al. (2016) · Physical review. B./Physical review. B · doi:10.1103/physrevb.93.075132 · Cited by 30 · see citing works
Lv, F., Zhong, Y., Zhao, X., An, X., Lin, L., Ren, D., Liu, B., & Ang, R. (2023) · Materials Today Physics · doi:10.1016/j.mtphys.2023.101061 · Cited by 28 · see citing works
Widely tunable band gap in a multivalley semiconductor SnSe by potassium doping
Zhang, K., Deng, K., Li, J., Zhang, H., Yao, W., Denlinger, J. D., Wu, Y., Duan, W., & Zhou, S. (2018) · Physical Review Materials · doi:10.1103/physrevmaterials.2.054603 · Cited by 27 · see citing works
Realization of a New Topological Crystalline Insulator and Lifshitz Transition in PbTe
Ma, S., Guo, C., Xiao, C., Wu, F., Smidman, M., Lu, Y., Yuan, H., & Wu, H. (2018) · Advanced Functional Materials · doi:10.1002/adfm.201803188 · Cited by 24 · see citing works
Jin, W., Vishwanath, S., Liu, J., Kong, L., Lou, R., Dai, Z., Sadowski, J. T., Liu, X., Lien, H.-H., Chaney, A., et al. (2017) · Physical Review X · doi:10.1103/physrevx.7.041020 · Cited by 24 · see citing works
Hasan, M. Z., Xu, S., & Neupane, M. (2015) · Wiley eBooks · doi:10.1002/9783527681594.ch4 · Cited by 24 · see citing works
Research status and performance optimization of medium-temperature thermoelectric material SnTe
Peng, P., Wang, C., Li, L., Li, S.-Y., & Chen, Y. (2021) · Chinese Physics B · doi:10.1088/1674-1056/ac20c9 · Cited by 22 · see citing works
From Atomistic Surface Chemistry to Nanocrystals of Functional Chalcogenides
Deringer, V. L., & Dronskowski, R. (2015) · Angewandte Chemie International Edition · doi:10.1002/anie.201506874 · Cited by 20 · see citing works
Strain tuning of Dirac states at the SnTe (001) surface
Drüppel, M., Krüger, P., & Rohlfing, M. (2014) · Physical Review B · doi:10.1103/physrevb.90.155312 · Cited by 20 · see citing works
Pressure-Driven Enhancement of Topological Insulating State in Tin Telluride
Zhou, D., Li, Q., Ma, Y., Cui, Q., & Chen, C. (2013) · The Journal of Physical Chemistry C · doi:10.1021/jp401928j · Cited by 19 · see citing works
Ibrahim, D., Candolfi, C., Migot, S., Ghanbaja, J., Dauscher, A., Caër, G. L., Malaman, B., Semprimoschnig, C. O. A., & Lenoir, B. (2019) · Physical Review Materials · doi:10.1103/physrevmaterials.3.085404 · Cited by 19 · see citing works
One–One Correspondence between n-Type SnTe Thermoelectric and Topological Phase Transition
Guo, C., Wang, D., Zhang, X., & Zhao, L. (2022) · Chemistry of Materials · doi:10.1021/acs.chemmater.2c00251 · Cited by 18 · see citing works
Band degeneracy and convergence in high performing thermoelectric materials
Ji, D., Haile, N. F., Li, X., Li, B., Rezeq, M., Cantwell, W. J., & Zheng, L. (2025) · Applied Energy · doi:10.1016/j.apenergy.2025.127182 · Cited by 17 · see citing works
Tuning valley degeneracy with band inversion
Toriyama, M. Y., Brod, M. K., Gomes, L., Bipasha, F. A., Assaf, B. A., Ertekin, E., & Snyder, G. J. (2021) · Journal of Materials Chemistry A · doi:10.1039/d1ta08379a · Cited by 17 · see citing works
Electron and hole contributions to normal-state transport in the superconducting system Sn1−xInxTe
Zhang, C., He, X.-G., Chi, H., Zhong, R., Ku, W., Gu, G. D., Tranquada, J. M., & Li, Q. (2018) · Physical review. B./Physical review. B · doi:10.1103/physrevb.98.054503 · Cited by 17 · see citing works
Ling, C., Guo, T., Zhao, L., Hou, Z., & Zhang, T. (2019) · Ceramics International · doi:10.1016/j.ceramint.2019.04.017 · Cited by 17 · see citing works
Morozova, N. V., Korobeynikov, I. V., & Ovsyannikov, S. V. (2021) · Applied Physics Letters · doi:10.1063/5.0043954 · Cited by 16 · see citing works
Surface magnetism in topological crystalline insulators
Reja, S., Fertig, H. A., Brey, L., & Zhang, S. (2017) · Physical review. B./Physical review. B · doi:10.1103/physrevb.96.201111 · Cited by 16 · see citing works
Wei, F., Gao, X., Ma, S., & Zhi-dong, Z. (2019) · physica status solidi (b) · doi:10.1002/pssb.201900139 · Cited by 13 · see citing works
Ahuja, B. L., Raykar, V., Joshi, R., Tiwari, S., Talreja, S., & Choudhary, G. (2015) · Physica B Condensed Matter · doi:10.1016/j.physb.2015.03.002 · Cited by 12 · see citing works
Electronic structure of InTe, SnAs and PbSb: Valence-skip compound or not?
Hase, I., Yasutomi, K., Yanagisawa, T., Odagiri, K., & Nishio, T. (2016) · Physica C Superconductivity · doi:10.1016/j.physc.2016.06.007 · Cited by 12 · see citing works
Temperature-driven band inversion in Pb0.77Sn0.23Se : Optical and Hall effect studies
Anand, N., Buvaev, S., Hebard, A. F., Tanner, D. B., Chen, Z., Li, Z., Choudhary, K. K., Sinnott, S. B., Gu, G. D., & Martin, C. (2014) · Physical Review B · doi:10.1103/physrevb.90.235143 · Cited by 11 · see citing works
Giant Pressure‐Induced Enhancement of Seebeck Coefficient and Thermoelectric Efficiency in SnTe
Baker, J., Kumar, R. S., Park, C., Kenney‐Benson, C., Cornelius, A. L., & Velisavljevic, N. (2017) · ChemPhysChem · doi:10.1002/cphc.201700994 · Cited by 11 · see citing works
Jin, W., & Osgood, R. M. (2019) · Advances in Physics X · doi:10.1080/23746149.2019.1688187 · Cited by 11 · see citing works
Changes of Fermi surface topology due to the rhombohedral distortion in SnTe
O’Neill, C. D., Clark, O. J., Keen, H. D. J., Mazzola, F., Marković, I., Sokolov, D. A., Malekos, A., King, P. D. C., Hermann, A., & Huxley, A. (2020) · Physical review. B./Physical review. B · doi:10.1103/physrevb.102.155132 · Cited by 11 · see citing works
Non-monotonic pressure dependence of band gap in SnTe
Li, W., He, Q., Chen, J., Pan, Z., & Wang, T. (2014) · Chemical Physics Letters · doi:10.1016/j.cplett.2014.10.050 · Cited by 12 · see citing works
Formation of Nanoscale Composites of Compound Semiconductors Driven by Charge Transfer
Gao, W., dos Reis, R., Schelhas, L. T., Pool, V. L., Toney, M. F., Yu, K. M., & Walukiewicz, W. (2016) · Nano Letters · doi:10.1021/acs.nanolett.6b02395 · Cited by 11 · see citing works
Surface hole accumulation and Fermi level stabilization energy in SnTe
Nishitani, J., Detert, D. M., Beeman, J. W., Yu, K. M., & Walukiewicz, W. (2014) · Applied Physics Express · doi:10.7567/apex.7.091201 · Cited by 10 · see citing works
Electronic, transport, optical, and structural properties of rocksalt CdO
Ekuma, C. E., Moreno, J., & Jarrell, M. (2013) · Journal of Applied Physics · doi:10.1063/1.4825312 · Cited by 10 · see citing works
Thickness effect on scaling law and surface properties of nano-dimensional SnTe thin films
Maity, G., Yadav, R. P., Singhal, R., Sulania, I., Mittal, A., Chaudhary, D. K., Kanjilal, D., & Patel, S. P. (2021) · Journal of Applied Physics · doi:10.1063/5.0066006 · Cited by 10 · see citing works
Zhang, A., Wei, F., Yan, C., Wang, F., Ma, S., & Zhi-dong, Z. (2019) · Nanotechnology · doi:10.1088/1361-6528/ab13cf · Cited by 9 · see citing works
Structural, Electronic and Thermoelectric Properties of Pb1−xSnxTe Alloys
Pandit, A., Haleoot, R. E., & Hamad, B. A. (2019) · Journal of Electronic Materials · doi:10.1007/s11664-019-07715-4 · Cited by 9 · see citing works
SnTe field effect transistors and the anomalous electrical response of structural phase transition
Li, H., Zhu, H., Yuan, H., You, L., Richter, C. A., Kopanski, J. J., Zhao, E., & Li, Q. (2014) · Applied Physics Letters · doi:10.1063/1.4887055 · Cited by 9 · see citing works
Tailoring the electronic structure of Mn-doped SnTe via strain
Zhao, X., Zhang, X., Wang, T., Xia, C., & Wei, S. (2018) · Journal of Materials Science · doi:10.1007/s10853-018-2767-5 · Cited by 9 · see citing works
In‐Plane Nanowire Growth of Topological Crystalline Insulator Pb1 − xSnxTe
Schellingerhout, S. G., Bergamaschini, R., Verheijen, M. A., Montalenti, F., Miglio, L., & Bakkers, E. P. A. M. (2023) · Advanced Functional Materials · doi:10.1002/adfm.202305542 · Cited by 8 · see citing works
Dash, K., & Tripathi, G. S. (2011) · Journal of Magnetism and Magnetic Materials · doi:10.1016/j.jmmm.2011.08.051 · Cited by 8 · see citing works
Theory of k→⋅π→+U formalism for diluted magnetic semiconductors: Application to p-type Sn1−xGdxTe
Tripathi, G. S., Dash, K., Behera, S. N., Nayak, S. K., & Entel, P. (2013) · Journal of Applied Physics · doi:10.1063/1.4793788 · Cited by 7 · see citing works
Microstrucutre and thermoelectric properties of rapidly prepared Sn1−xMnxTe alloys
Yang, B., Li, S., Li, X., Feng, S., Liu, Z., & Zhong, H. (2018) · Journal of Materials Science Materials in Electronics · doi:10.1007/s10854-018-0018-9 · Cited by 7 · see citing works
Dagdeviren, O. E., Mandal, S., Zou, K., Zhou, C., Simon, G. H., Walker, F. J., Ahn, C., Schwarz, U. D., Ismail‐Beigi, S., & Altman, E. I. (2018) · Physical Review Materials · doi:10.1103/physrevmaterials.2.114205 · Cited by 7 · see citing works
Baral, S., Dasoundhi, M. K., Rajput, I., Kumar, D., & Lakhani, A. (2021) · physica status solidi (RRL) - Rapid Research Letters · doi:10.1002/pssr.202100542 · Cited by 7 · see citing works
Optimising the thermoelectric properties of SnTe by band engineering
Kaur, B., Gupta, R., Dhiman, S., Kaur, K., & Bera, C. (2024) · Pramana · doi:10.1007/s12043-024-02832-0 · Cited by 6 · see citing works
Sihi, A., & Pandey, S. K. (2021) · Journal of Physics Condensed Matter · doi:10.1088/1361-648x/abeca8 · Cited by 6 · see citing works
Devi, S. R., & Sharma, B. I. (2025) · Physica B Condensed Matter · doi:10.1016/j.physb.2025.417008 · Cited by 5 · see citing works
Self-organization of various “phase-separated” nanostructures in a single chemical vapor deposition
Wang, J., Xie, D., Li, Z., Zhang, X., Sun, X., Coughlin, A. L., Ruch, T., Chen, Q., Losovyj, Y. B., Lee, S.-H., et al. (2020) · Nano Research · doi:10.1007/s12274-020-2798-5 · Cited by 5 · see citing works
Devi, S. R., & Sharma, B. I. (2025) · Journal of the Korean Physical Society · doi:10.1007/s40042-025-01310-z · Cited by 4 · see citing works
Improvement of Thermoelectric Performance of SnTe by Energy Band Optimization and Carrier Regulation
Chen, H., Fan, W., An, D., & Shaoping, C. H. E. N. (2023) · Journal of Inorganic Materials · doi:10.15541/jim20230316 · Cited by 4 · see citing works
Spin stiffness and domain walls in Dirac-electron mediated magnets
Reja, S., Fertig, H. A., & Brey, L. (2019) · Physical review. B./Physical review. B · doi:10.1103/physrevb.99.045427 · Cited by 4 · see citing works
Topologically nontrivial narrow bands in ultrathin SnTe films with defect superstructures
Kim, M., & Ihm, J. (2014) · Journal of Physics Condensed Matter · doi:10.1088/0953-8984/26/23/235504 · Cited by 3 · see citing works
Sihi, A., & Pandey, S. K. (2021) · Physics Letters A · doi:10.1016/j.physleta.2021.127359 · Cited by 3 · see citing works
Band ordering and surface states of SnTe and PbTe
Yakovkin, I. N. (2021) · Physica B Condensed Matter · doi:10.1016/j.physb.2021.413120 · Cited by 3 · see citing works
Nanostructured Inorganic–Organic Hybrid Semiconductor Materials
Li, J., & Zhang, R. (2013) · Elsevier eBooks · doi:10.1016/b978-0-08-097774-4.00218-7 · Cited by 3 · see citing works
Band structure of superconducting Dirac electron systems
Kuraya, T., & Fuseya, Y. (2015) · Journal of Physics Conference Series · doi:10.1088/1742-6596/603/1/012025 · Cited by 3 · see citing works
High Thermoelectric Performance of SnTe from the Disproportionation of SnO
Hu, H., Yang, J., Jin-Wu, X., Li, S., & Qinghui, J. (2019) · Journal of Inorganic Materials · doi:10.15541/jim20180288 · Cited by 3 · see citing works
Von atomistischer Oberflächenchemie zu Nanokristallen funktionaler Chalkogenide
Deringer, V. L., & Dronskowski, R. (2015) · Angewandte Chemie · doi:10.1002/ange.201506874 · Cited by 1 · see citing works
Superconductivity and Fermi Surface of Tl:PbTe
Buchauer, L. (2014) · TUbilio (Technical University of Darmstadt) · doi:10.0253/tuprints-00006158 · Cited by 1 · see citing works
Towards highly-efficient telluride-based thermoelectric materials
Misra, S. (2020) · doi:10.70675/14315727z86bfz4536zae98ze8974e7aff38 · Cited by 1 · see citing works
Electronic properties of La1−Tl N systems by ab initio calculations
Ruszała, P., Winiarski, M. J., & Samsel-Czekała, M. (2021) · Journal of Physics and Chemistry of Solids · doi:10.1016/j.jpcs.2021.110274
On the Character of Superconductivity and Topological Properties of SnAs
Dmitrieva, K. A., Bezotosnyi, P. I., & Pudalov, V. M. (2023) · Journal of Experimental and Theoretical Physics Letters · doi:10.1134/s0021364023603652
O kharaktere sverkhprovodimosti i topologicheskikh svoystvakh SnAs
Dmitrieva, K. A., Bezotosnyi, P. I., & Pudalov, V. M. (2023) · Письма в Журнал экспериментальной и теоретической физики · doi:10.31857/s1234567823240084
Devi, S. R., Ahmed, B., & Sharma, B. I. (2024) · Interactions · doi:10.1007/s10751-024-02203-6
- Authors
- Littlewood, P. B., Mihaila, B., Schulze, R. K., Safarik, D. J., Gubernatis, J. E., Bostwick, A., Rotenberg, E., Opeil, C. P., Durakiewicz, T., Smith, J. L., & Lashley, J. C.
- Affiliations
- University of Cambridge (GB)
- Los Alamos National Laboratory (US)
- Lawrence Berkeley National Laboratory (US)
- Boston College (US)
- ORCID
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 2010-08-20
- Volume
- 105
- Issue
- 8
- Pages
- 086404-086404
- ISSN
- 0031-9007 (ISSN-L)
- 1079-7114
- OpenAlex
- W2031045756
- Cited by
- 106
- References
- 12
- Citations by year
- 2026: 4 · 2025: 4 · 2024: 2 · 2023: 5 · 2022: 2 · 2021: 10 · 2020: 4 · 2019: 12 · 2018: 12 · 2017: 8 · 2016: 6 · 2015: 6 · 2014: 12 · 2013: 11 · 2012: 5
- FWCI
- 3.25
- Type
- journal article
- Language
- en
- Open access
- green
- arxiv.org
- Locations
- Physical Review Letters (publishedVersion)
- PubMed (publishedVersion)
- arXiv (Cornell University) (submittedVersion)
- arXiv (Cornell University)
- Topics
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Topological Materials and Phenomena
- Physical Sciences › Materials Science › Materials Chemistry › 2D Materials and Applications
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Semiconductor Detectors and Materials
- Keywords
- SnTe, electronic band structure, Fermi surface, L point, P-band, tight-binding model, chemical potential, carrier concentration, valence band, angle-resolved photoemission
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Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
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