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Cited by 170

The DOI matches its Crossref record.

Silicon‐On‐Insulator by Wafer Bonding: A Review

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Maszara, W. P.·1991·Journal of The Electrochemical Society

Abstract

Various approaches to wafer bonding technology are reviewed. Bonding kinetics are discussed as well as different mechanical and chemical thinning techniques. The structural and electrical qualities of state‐of‐the‐art bonded SOI silicon films and devices built in them are detailed. Problems faced by this technology are evaluated.

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Metadata

Authors
Maszara, W. P.
Venue
Journal of The Electrochemical Society
Published
1991-01-01
Volume
138
Issue
1
Pages
341-347
ISSN
  • 0013-4651 (ISSN-L)
  • 1945-7111
OpenAlex
W1966863561
Cited by
170
References
0
FWCI
18.44
Type
journal article
Language
en
Open access
bronze

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CoChat. (2026). Citation check: Silicon‐On‐Insulator by Wafer Bonding: A Review. https://app.cochat.ai/papers/10.1149/1.2085575
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Maszara, W. P. (1991). Silicon‐On‐Insulator by Wafer Bonding: A Review. Journal of The Electrochemical Society. https://doi.org/10.1149/1.2085575

Data sources

Bibliographic data: Semantic Scholar, OpenAlex, Crossref.

Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.