Dry Etch Resistance of Organic Materials

Gokan, H.; Esho, S.; Ohnishi, Y.

doi:10.1149/1.2119642

Cited by 265Advancements in Photolithography TechniquesLow-Pressure Plasma Processing and DiagnosticsIon-surface interactions and analysis

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Dry Etch Resistance of Organic Materials

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Gokan, H., Esho, S., Ohnishi, Y.·1983·Journal of The Electrochemical Society

DOI 10.1149/1.2119642

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Abstract

The dry etch resistance of metal‐free organic materials, mainly resist materials, has been studied. Etch rates have been measured under argon ion‐beam, oxygen ion‐beam, and oxygen plasma etching conditions. It is found that the etch rate under ion bombardment has a linear dependence on the of the etched materials, where , , and denote the total number of atoms in a monomer unit, the number of carbon atoms in a monomer unit, and the number of oxygen atoms in a monomer unit, respectively. The results indicate that the dry etch resistance under ion bombardment is determined by the effective carbon content in a material. The etch rates of the polymers in an oxygen plasma condition have no simple correlation with the effective carbon content in a material. This implies that etching mechanism under ion bombardment differs from the etching mechanism by radical species.

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Authors: Gokan, H., Esho, S., & Ohnishi, Y.
Affiliations: NEC (Japan) (JP)
Venue: Journal of The Electrochemical Society
Publisher: The Electrochemical Society
Published: 1983-01-01
Volume: 130
Issue: 1
Pages: 143-146
ISSN: 0013-4651 (ISSN-L)
1945-7111
DOI: 10.1149/1.2119642
OpenAlex: W2145930691
Cited by: 265
References: 0
Citations by year: 2026: 3 · 2025: 8 · 2024: 4 · 2023: 11 · 2022: 6 · 2021: 3 · 2020: 6 · 2019: 8 · 2018: 11 · 2017: 12 · 2016: 13 · 2015: 11 · 2014: 11 · 2013: 11 · 2012: 13
FWCI: 4.46
Type: journal article
Language: en
Open access: bronze
doi.org
Licence: iopscience.iop.org/page/copyright (vor, 13489 d)
iopscience.iop.org/info/page/text-and-data-mining (tdm, 13489 d)
Locations: Journal of The Electrochemical Society (publishedVersion)
Funders: Basic Research Laboratory
Topics: Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Photolithography Techniques
Physical Sciences › Engineering › Electrical and Electronic Engineering › Low-Pressure Plasma Processing and Diagnostics
Physical Sciences › Materials Science › Surfaces, Coatings and Films › Ion-surface interactions and analysis
Keywords: dry etch resistance, resist materials, organic polymers, etch rate, oxygen plasma etching, carbon content, etching mechanism, ion bombardment

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Dry Etch Resistance of Organic Materials

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