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Chemical Etching of Silicon
Open accessAbstract
The etch rate of silicon in solutions of various compositions selected from the system , , , and has been investigated over the temperature range 0° to 50 °C. The activation energy of the etching process has been found to be different in the different composition regions. In the high region values of about 4 kcal/mole have been observed and interpreted as characteristic of a diffusion governed reaction. In compositions containing or diluents the activation energy increases, and two values are found. In the high region two values are also observed, one in the range of 10–14 kcal/mole, and the other in the range of about 20 kcal/mole. The significance of the various values of the activation energy is discussed.
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Citations
Cited by
Anisotropic etching of silicon
Bean, K. E. (1978) · IEEE Transactions on Electron Devices · doi:10.1109/t-ed.1978.19250 · Cited by 803
Bulk micromachining of silicon
Kovacs, G. T. A., Maluf, N. I., & Petersen, K. E. (1998) · Proceedings of the IEEE · doi:10.1109/5.704259 · Cited by 733
A wafer-scale etching technique for high aspect ratio implantable MEMS structures
Bhandari, R., Negi, S., Rieth, L., & Solzbacher, F. (2010) · Sensors and Actuators A: Physical · doi:10.1016/j.sna.2010.06.011 · Cited by 71
Metadata
- Authors
- Schwartz, B., & Robbins, H.
- Venue
- Journal of The Electrochemical Society
- Publisher
- The Electrochemical Society
- Published
- 1961
- Volume
- 108
- Issue
- 4
- Pages
- 365
- ISSN
- 0013-4651 (ISSN-L)
- OpenAlex
- W1560798185
- Cited by
- 190
- References
- 0
- FWCI
- 0.00
- Type
- journal article
- Language
- en
- Open access
- bronze
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- Schwartz, B., & Robbins, H. (1961). Chemical Etching of Silicon. Journal of The Electrochemical Society. https://doi.org/10.1149/1.2428090
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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