The DOI matches its Crossref record; 5 of the 5 references it cites were found in a registry or an index.
Anisotropic etching of silicon
Abstract
Anisotropic etching of silicon has become an important technology in silicon semiconductor processing during the past ten years. It will continue to gain stature and acceptance as standard processing technology in the next few years. Anisotropic etching of (100) orientation silicon is being widely used today and (110) orientation technology is emerging. This paper discusses both orientation-dependent and concentration-dependent etching of (100) and (110) silicon. Very exact process control steps may be designed into a process by use of (100) anisotropic and concentration-dependent etching. Also, methods of oxide or nitride pin hole detection in (100) silicon are presented. Mask alignments to obtain different etch front termination in both (100) and (110) silicon are shown. Very high packing density structures, less than 1 μm, are obtained in the (110) technology, and extremely high etching ratios of greater than 650 to 1 are obtained in (110) orientation-dependent etching. Some of the many applications for anisotropic and concentration-dependent etching are described.
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Citations
Cites
Electropolishing Silicon in Hydrofluoric Acid Solutions
Turner, D. R. (1958) · Journal of The Electrochemical Society · doi:10.1149/1.2428873 · Cited by 632
A Water-Amine-Complexing Agent System for Etching Silicon
Finne, R. M., & Klein, D. L. (1967) · Journal of The Electrochemical Society · doi:10.1149/1.2426793 · Cited by 309
Robbins, H., & Schwartz, B. (1960) · Journal of The Electrochemical Society · doi:10.1149/1.2427617 · Cited by 199
Schwartz, B., & Robbins, H. (1961) · Journal of The Electrochemical Society · doi:10.1149/1.2428090 · Cited by 190
On etching very narrow grooves in silicon
Kendall, D. L. (1975) · Applied Physics Letters · doi:10.1063/1.88113 · Cited by 131
Cited by
Bulk micromachining of silicon
Kovacs, G. T. A., Maluf, N. I., & Petersen, K. E. (1998) · Proceedings of the IEEE · doi:10.1109/5.704259 · Cited by 733
Microstructured Graphene Arrays for Highly Sensitive Flexible Tactile Sensors
Zhu, B., Niu, Z., Wang, H., Leow, W. R., Wang, H., Li, Y., Zheng, L., Wei, J., Huo, F., & Chen, X. (2014) · Small · doi:10.1002/smll.201401207 · Cited by 632
Micromachined pressure sensors: review and recent developments
Eaton, W. P., & Smith, J. H. (1997) · Smart Materials and Structures · doi:10.1088/0964-1726/6/5/004 · Cited by 593
A Path Beyond Metal and Silicon:Polymer/Nanomaterial Composites for Stretchable Strain Sensors
Qiu, A., Li, P., Yang, Z., Yao, Y., Lee, I., & Ma, J. (2019) · Advanced Functional Materials · doi:10.1002/adfm.201806306 · Cited by 237
Metadata
- Authors
- Bean, K. E.
- Venue
- IEEE Transactions on Electron Devices
- Published
- 1978-10
- Volume
- 25
- Issue
- 10
- Pages
- 1185-1193
- ISSN
- 0018-9383 (ISSN-L)
- 1557-9646
- OpenAlex
- W1979078109
- Cited by
- 803
- References
- 5
- FWCI
- 14.96
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Anisotropic etching of silicon. https://app.cochat.ai/papers/10.1109/t-ed.1978.19250
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- Bean, K. E. (1978). Anisotropic etching of silicon. IEEE Transactions on Electron Devices. https://doi.org/10.1109/t-ed.1978.19250
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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