Performance and design of InGaAs/InP photodiodes for single-photon counting at 155 µm
Abstract
The performance of selected, commercially available InGaAs/InP avalanche photodiodes operating in a photon-counting mode at an incident wavelength of 1.55 microm is described. A discussion on the optimum operating conditions and their relationship to the electric field distribution within the device is presented.
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Photon-counting devices based on III-V semiconductors are now available in the near-infrared window.
“Photon-counting devices based on III-V semiconductors now become available in the near-IR window (Hiskett et al 2000, Rarity et al 2000, Stucki et al 2001).”
From Single-photon sources (2005) · cites this paper as Hiskett et al 2000
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Gisin, N., Ribordy, G., Tittel, W., & Zbinden, H. (2002) · Reviews of Modern Physics · doi:10.1103/revmodphys.74.145 · Cited by 8,515 · see citing works
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Demonstration of a low-noise near-infrared photon counter with multiphoton discrimination
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- Authors
- Hiskett, P. A., Buller, G. S., Loudon, A. Y., Smith, J. M., Gontijo, I., Walker, A. C., Townsend, P. D., & Robertson, M. J.
- Affiliations
- Heriot-Watt University (GB)
- University of California, Los Angeles (US)
- Venue
- Applied Optics
- Publisher
- Optica Publishing Group
- Published
- 2000-12-20
- Volume
- 39
- Issue
- 36
- Pages
- 6818
- ISSN
- 0003-6935 (ISSN-L)
- 1539-4522
- OpenAlex
- W2162636026
- Cited by
- 126
- References
- 35
- Citations by year
- 2026: 2 · 2025: 1 · 2024: 5 · 2023: 1 · 2022: 4 · 2021: 1 · 2020: 3 · 2019: 5 · 2018: 3 · 2017: 3 · 2016: 4 · 2015: 4 · 2014: 3 · 2013: 5 · 2012: 3
- FWCI
- 6.92
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Applied Optics (publishedVersion)
- PubMed (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Semiconductor Detectors and Materials
- Physical Sciences › Physics and Astronomy › Instrumentation › Advanced Optical Sensing Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor Lasers and Optical Devices
- Keywords
- InGaAs/InP avalanche photodiode, single photon counting, 1550 nm, electric field distribution, operating conditions, photodiode design
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