Electrically pumped hybrid AlGaInAs-silicon evanescent laser
Open accessAbstract
An electrically pumped light source on silicon is a key element needed for photonic integrated circuits on silicon. Here we report an electrically pumped AlGaInAs-silicon evanescent laser architecture where the laser cavity is defined solely by the silicon waveguide and needs no critical alignment to the III-V active material during fabrication via wafer bonding. This laser runs continuous-wave (c.w.) with a threshold of 65 mA, a maximum output power of 1.8 mW with a differential quantum efficiency of 12.7 % and a maximum operating temperature of 40 degrees C. This approach allows for 100's of lasers to be fabricated in one bonding step, making it suitable for high volume, low-cost, integration. By varying the silicon waveguide dimensions and the composition of the III-V layer, this architecture can be extended to fabricate other active devices on silicon such as optical amplifiers, modulators and photo-detectors.
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Heterogeneous integration strategies include bonding III-V chips to Si with coarse alignment followed by post-processing the Si wafer to make quantum-well (QW) lasers.
“They include bonding III-V chips to Si with coarse alignment followed by post-processing the Si wafer to make quantum-well (QW) lasers (Fig. 3e)14,18,19,22.”
From Roadmapping the next generation of silicon photonics (2024) · cites this paper as [14]
Another commercially successful technique in HVM (>million/year) has been heterogeneous integration, where multiple materials or epitaxial stacks are processed together into one silicon chip at wafer scale.
“Another commercially successful technique in HVM (>million/year)14 has been heterogeneous integration, where multiple materials or epitaxial stacks are processed together into one silicon chip at wafer scale.”
From Roadmapping the next generation of silicon photonics (2024) · cites this paper as [14]
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- Authors
- Fang, A. W., Park, H., Cohen, O., Jones, R., Paniccia, M. J., & Bowers, J. E.
- Affiliations
- University of California, Santa Barbara (US)
- Intel (Israel) (IL)
- Intel (United States) (US)
- Venue
- Optics Express
- Publisher
- Optica Publishing Group
- Published
- 2006
- Volume
- 14
- Issue
- 20
- Pages
- 9203
- ISSN
- 1094-4087 (ISSN-L)
- OpenAlex
- W1992672596
- Cited by
- 1,244
- References
- 0
- Citations by year
- 2026: 21 · 2025: 39 · 2024: 35 · 2023: 43 · 2022: 40 · 2021: 53 · 2020: 44 · 2019: 62 · 2018: 77 · 2017: 69 · 2016: 82 · 2015: 82 · 2014: 76 · 2013: 78 · 2012: 87
- FWCI
- 71.87
- Type
- journal article
- Language
- en
- Open access
- gold
- doi.org
- Licence
- Locations
- Optics Express (publishedVersion)
- PubMed (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Photonic and Optical Devices
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor Lasers and Optical Devices
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Semiconductor Quantum Structures and Devices
- Keywords
- electrically pumped lasers, AlGaInAs, silicon photonics, wafer bonding, silicon waveguides, continuous-wave operation, photonic integrated circuits, quantum efficiency, high-temperature operation
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